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Electrical Properties of Heterolayered BT/BNT Thick Films  

Nam, Sung-Pill (경상대 공대 세라믹공학과)
Lee, Seung-Hwan (광운대 전자정보대 전자재료공학과)
Lee, Sung-Gap (경상대 공대 세라믹공학과)
Bae, Seon-Gi (인천대 공대 전기공학과)
Lee, Young-Hie (광운대 전자정보대 전자재료공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.58, no.12, 2009 , pp. 2431-2435 More about this Journal
Abstract
The heterolayered BT/BNT thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric and dielectric properties in the heterolayered tetragonal/rhombohedral structure composed of the BT and the BNT thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BT/BNT thick films. The dielectric properties of the heterolayered BT/BNT thick films were superior to those of single composition BNT, and those values for the heterolayered BT/BNT thick films were 1455, 0.025 and $12.63 {\mu}C/cm^2$.
Keywords
Heterolayer; BT-BNT; Thick films; Dielectric properties;
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