• Nuclear Engineering and Technology
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• 제5권2호
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• pp.77-82
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• 1973

Fermi통계를 도입한 새로운 밀도행렬을 정의함으로써 전자들의 Partition 함수를 구하는 방법이 마련되었다. 새 밀도행렬에 대응하는 Bloch방정식이 형성되었고 약한 Potential에 대하여 이것을 푸는 방법이 얻어겼다. 이 이론은 액체금속의 모델이 될 수 있는 구조적 불규칙계에 적용되었다.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1612-1618
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• 2018

In this work, the ground-state properties of an interacting electron gas confined in a two-dimensional quantum dot system with the Gaussian potential ${\upsilon}(r)=V_0(1-{\exp}(-r^2/p))$, where $V_0$ and p are confinement parameters, are determined numerically by using the Thomas-Fermi approximation. The shape of the potential is modified by changing the $V_0$ and the p values, and the influence of the confining potential on the system's properties, such as the chemical energy, the density profile, the kinetic energy, the confining energy, etc., is analyzed for both the non-interacting and the interacting cases. The results are compared with those calculated for a harmonic potential, and excellent agreement is obtained in the limit of high p values for both the non-interacting and the interacting cases.

• Nuclear Engineering and Technology
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• 제10권3호
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• pp.127-136
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• 1978

온도종속 Thomas-Fermi 이론을 적용하여 금속의 일종인 Na에 대한 상태방정식, chemical potential, % ion 화도, 엔트로피, 원자당운동에너지 및 총에너지 등을 포함한 제열학적동을 산출하였다. $\rho$$_{0}$를 Na의 비등점에서의 정상밀도라 할 때 0.1$\rho$$_{0}$ ~ 10$\rho$$_{0}$ 까지의 밀도영역에서, 또한 Na이 기체 또는 액체상태로 존재할 것으로 기대되는 $textsc{k}$T=60.88Ryd.~0.0216Ryd 까지의 온도영역에 대하여 이들 양을 산출하였다. 본 연구에서는 고온 및 고압상태에서의 물리양 산출하는 것을 주목적으로 하고 있으나 Thomas-Fermi 근사가 기대되는 것처럼 그렇게 조잡하지 않음을 보이기 위하여 극저온 및 극저밀도에서의 물리양들도 산출하였다. 특히 고온에서의 상태방정식, 운동에너지, chemical potential 및 엔트로피를 ideal Fermi gas의 이들 양과 비교하였다. 그 결과, 산출한 chemical potential은 서로 잘 일치하나 엔트로피, 원자당운동에너지 및 상태방정식은 $textsc{k}$T=60.88Ryd.의 고온에서도 상당한 차이가 있음을 발견하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.29-32
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• 2000

In this paper, an analytical model for I-V characteristics of a HEMTs is Proposed. The developed model takes into account the temperature dependence of drain current. In high-speed ICs for optical communication systems and mobile communication systems, temperature variation affects performance; for example the gain, efficiency in analog circuits and the delay time, power consumption and noise mrgin in digital circuits. To design such a circuit taking into account the temperature dependence of the current-voltage characteristic is indispensible. This model based on the analytical relation between surface carrier density and Fermi potential including temperature dependent coefficients.

• Journal of Magnetics
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• 제13권1호
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• pp.7-10
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• 2008

The structural and magnetic properties of functionalized carbon chains doped with 4d transition metals, such as Ru, Rh, and Pd, were investigated using the full-potential linearized augmented plane wave (FLAPW) method. The carbon nanowire doped with Ru exhibited a ferromagnetic ground state with a sizable magnetic moment, while those doped with Rh and Pd had nonmagnetic ground states. For the Ru-doped chain, the density of states at the Fermi level showed large spin polarization, which suggests that the doped nanowire could be used for spintronic applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.11-11
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• 2011

In this talk, I will discuss roles of pseudo vector and scalar potential in changing physical properties of graphene systems. First, graphene under small uniaxial strain is shown to be described by the generalized Weyl's Hamiltonian with inclusion of pseudo vector and scalar potential simultaneously [1]. Thus, strained graphene is predicted to exhibit velocity anisotropy as well as work function enhancement without any gap. Second, if homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap [2]. This phenomenon is made possible by generation of inequivalent pseudo scalar potentials in the two graphene layers. Third, when very tiny lateral interlayer shift occurs in bilayer graphene, the Fermi surfaces of the system are shown to undergo Lifshitz transition [3]. We will show that this unexpected hypersensitive electronic topological transition is caused by a unique interplay between the effective non-Abelian vector potential generated by sliding motions and Berry's phases associated with massless Dirac electrons.

• Journal of Magnetics
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• 제7권4호
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• pp.132-137
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• 2002

The electronic structures and magnetism of the non-oxide perovskite MgCFe$_3$(001) surface were investigated by using the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). We considered both of the MgFe terminated (MgFe-Term) and the CFe terminated (CFe-Term) surfaces. We found that the minority spin d-bands of Fe(S) of the MgFe-Term are strongly localized and Fermi level (EF) lies just below the sharp peak of the minority spin d-band of Fe(S), while the minority spin d-bands of Fe(S) of the CFe-Term are not localized much and Fermi level (E$_F$) lies in the middle of two peaks of the minority spins. The majority Fe(S) d-band width of MgFe- Term is narrower than that of the CFe-Term. It is found that the magnetic moment of Fe(S) of the MgFe- Term is 2.51 ${\mu}$$_B$, which is much larger than that of 1.97 ${\mu}$$_B$ of the CFe-Term.

• Bulletin of the Korean Chemical Society
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• 제32권6호
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• pp.1980-1984
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• 2011

A temperature- and coverage-dependant quasi-reversible change in two-photon photoemission (2PPE) of chemisorbed 1-phenyl-1-propyne (PP) on Cu(111) is reported. For PP on Cu(111) at 300 K probed at a photon energy of 4.13 eV, two broad peaks of comparable intensity show final state energies of 7.25 and 7.75 eV above the Fermi level. The former peak could be assigned to the first image potential state (IS, n = 1) and/or unoccupied molecular orbital (UMO), located at 3.1 eV above the Fermi level. The latter is plausibly attributed to a mix of unoccupied higher-order IS (and/or UMO) and occupied surface state (SS) of Cu(111). With decreasing the temperature, the former 2PPE peak shows a shift in position by about 0.2 eV, and the latter exhibits a dramatic increase in intensity. In the system, intermolecular interactions (and/or order-disorder transition) of PP and substrate lattice temperature may play a significant role in change in photoexcitation lifetime (or excitation cross-section), and the unoccupied molecular orbital (UMO)-metal (IS) charge transfer coupling. Our unique 2PPE results provide a deeper insight for understanding photoexcitation charge transfer with temperature in an organic molecule/metal system.

• 대한화학회지
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• 제61권1호
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• 한국정보통신학회논문지
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• 제15권6호
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• pp.1338-1342
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• 2011

본 연구에서는 차세대 나노소자인 DGMOSFET에서 발생하는 단채널효과 중 하나인 문턱전압특성에 대하여 분석하고자 한다. 특히 포아송방정식을 풀 때 전하분포를 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였으며 이때 가우시안 함수의 변수인 이온주입범위 및 분포편차에 대하여 문턱전압의 변화를 관찰하고자 한다. 포아송방정식으로 부터 해석학적 전위분포 모델을 구하였으며 이를 이용하여 문턱전압을 구하였다. 문턱전압은 표면전위가 페르미전위의 두배가 될 때 게이트 전압으로 정의되므로 표면전위의 해석학적 모델을 구하여 문턱전압을 구하였다. 본 연구의 모델이 타당하다는 것을 입증하기 위하여 포텐셜 분포값을 수치해석학적 값과 비교하였다. 결과적으로 본 연구에서 제시한 포텐셜모델이 수치해석학적 시뮬레이션모델과 매우 잘 일치하였으며 DGMOSFET의 도핑분포 함수의 형태에 따라 문턱전압 특성을 분석하였다.