Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.07a
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- Pages.29-32
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- 2000
Temperature dependency of dc Characteristics for HEMTs
온도변화에 따른 HEMT의 DC 특성 연구
Abstract
In this paper, an analytical model for I-V characteristics of a HEMTs is Proposed. The developed model takes into account the temperature dependence of drain current. In high-speed ICs for optical communication systems and mobile communication systems, temperature variation affects performance; for example the gain, efficiency in analog circuits and the delay time, power consumption and noise mrgin in digital circuits. To design such a circuit taking into account the temperature dependence of the current-voltage characteristic is indispensible. This model based on the analytical relation between surface carrier density and Fermi potential including temperature dependent coefficients.