• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.180-184
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• 2008

The relation of ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration has been investigated for variously angles of unidirectional deposition magnetic field of FeMn layer in Corning glas/Ta(5 nm)/NiFe(7 nm)/FeMn(25 nm)/ Ta(5 nm) multilayer prepared by ion beam deposition. Three unidirectional deposition angles of FeMn layer are $0^{\circ},\;45^{\circ}$, and $90^{\circ}$, respectively. The exchange bias field ($H_{ex}$) obtained from the measuring easy axis MR loop was decreased to 40 Oe in deposition angle of $45^{\circ}$, and to 0 Oe in the angle of $90^{\circ}$. One other side hand, $H_{ex}$ obtained from the measuring hard axis MR loop was increased to 35 Oe in deposition angle of $45^{\circ}$, and to 79 Oe in the angle of $90^{\circ}$. Although the difference of uniderectional axis between ferromagnet NiFe and antiferromagnet FeMn was 90o, the strong antiferromagnetic dipole moment of FeMn caused to rotate the weak ferromagnetic dipole moment of NiFe in the interface. This result implies that one of origins for exchange coupling mechanism depends on the effect of magnetic field angle during deposition of antiferromgnet FeMn layer.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.327-328
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.303-304
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• 2000

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.187-192
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• 2003

The magnetic and thermal properties of NiFe/[IrMn-Mn]/CoFe with Mn additions have been studied. As-deposited CoFe pinned layers with [IrMn-Mn]layer had dominantly larger exchange biasing field ( $H_{ex}$) and blocking temperature ( $T_{b}$) than those with pure I $r_{22}$M $n_{78}$ used. The $H_{ex}$ and $T_{b}$ improved with 76.8-78.1 vol% Mn, but those of the NiFe/IrMn/CoFe dropped considerably with more addition of 0.6 vol % Mn. The average x-ray diffraction peak ratios of fcc [(111)CoFe, NiFe]/(111)IrM $n_3$ textures for the Mn inserted total vol of 75.5, 77.5, and 79.3% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between IrMn and CoFe layers was almost zero, but it increased to 100 Oe after annealing of 250 $^{\circ}C$. For as-grown two multilayers samples with ultra-thin Mn layers of 77.5 and 78.7 vol %, the $H_{ex}$s were 259 and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was increased up to 475 Oe at 350 $^{\circ}C$ but decreased to 200 Oe at 450 $^{\circ}C$, respectively. The magnetic properties and thermal stabilities of NiFe/[IrMn-Mn]/CoFe multilayer were enhanced with Mn additions. In applications where higher $H_{ex}$ and $T_{b}$ are required, proper contents of Mn can be used. be used. used.

• Journal of Magnetics
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• v.10 no.3
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• pp.99-102
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• 2005

Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

• Journal of Magnetics
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• v.21 no.1
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• pp.40-45
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• 2016

Nickel substituted nano-sized ferrite powders, $Co_{1-x}Ni_xFe_2O_4$, $Mn_{1-x}Ni_xFe_2O_4$ and $Mn_{1-2x}Zn_xNi_xFe_2O_4$ ($0.0{\leq}x{\leq}0.2$), were fabricated using a sol-gel method, and their crystallographic and magnetic properties were subsequently compared. The lattice constants decreased as quantity of nickel substitution increased, while the particle size decreased in $Co_{1-x}Ni_xFe_2O_4$ ferrite but increased for the $Mn_{1-x}Ni_xFe_2O_4$ and $Mn_{1-2x}Zn_xNi_xFe_2O_4$ ferrites. For the $Co_{1-x}Ni_xFe_2O_4$ and $Mn_{1-x}Ni_xFe_2O_4$ ($0.0{\leq}x{\leq}0.2$) ferrite powders, the $M{\ddot{o}}ssbauer$ spectra could be fitted as the superposition of two Zeeman sextets due to the tetrahedral and octahedral sites of the $Fe^{3+}$ ions. However, the $M{\ddot{o}}ssbauer$ spectrum of $Mn_{0.8}Zn_{0.1}Ni_{0.1}Fe_2O_4$ consisted of two Zeeman sextets and one single quadrupole doublet due to the ferrimagnetic and paramagnetic behavior. The area ratio of the $M{\ddot{o}}ssbauer$ spectra could be used to determine the cation distribution equation, and we also explain the variation in the $M{\ddot{o}}ssbauer$ parameters by using this cation distribution equation, the superexchange interaction and the particle size. The saturation magnetization decreased in the $Co_{1-x}Ni_xFe_2O_4$ and $Mn_{1-2x}Zn_xNi_xFe_2O_4$ ferrites but increased in the $Mn_{1-x}Ni_xFe_2O_4$ ferrite with nickel substitution. The coercivity decreased in the $Co_{1-x}Ni_xFe_2O_4$ and $Mn_{1-2x}Zn_xNi_xFe_2O_4$ ferrites but increased in the $Mn_{1-x}Ni_xFe_2O_4$ ferrite with nickel substitution. These variations could thus be explained by using the site distribution equations, particle sizes and spin magnetic moments of the substituted ions.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.41-44
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• 2010

The Cu thickness dependence of magnetic sensitivity for the NiFe/Cu/NiFe/IrMn spin valve multilayer was investigated. The magnetic properties measured by minor MR curves for the Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) multilayer is MR = 1.46 %, MS = 2.0 %/Oe, $H_c\;=\;2.6\;Oe$, and $H_{int}\;=\;0.1\;Oe$. The magnetic sensitivities of GMR-SV devices with ten different widths and a same length of $4.45\;{\mu}m$ by fabricated by photo lithography decreased from 0.3 %/Oe to 0.06%/Oe as from a width of $10\;{\mu}m$ to $1\;{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.912-918
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• 2002

Ni-Mn-Co-Fe oxide thick films were coated on an alumina substrate by screening printing technique. The microstructure and electrical properties of the thick films, as a function of composition and sintering temperature, were investigated. The components of the NTC thick films sintered at 1150${\circ}C$ were distributed homogeneously. On the other hand, in the case of the NTC thick films sintered at 1200 and 1250${\circ}C$, Co element was distributed homogeneously, but Ni, Mn and Fe elements were distributed heterogeneously, resulting in the formation of Ni rich and Mn-Fe rich regions. All the thick film NTC thermistors prepared showed a linear relationship between log resistance (log R) and the reciprocal of absolute temperature (1/T), indicative of NTC characteristics. At a given NiO and $Mn_3O_4$ content, the resistance, B constant and activation energy of $(Ni_{1.0}Mn_{1.0}Co_{1-x}Fe_x)O_4$ (0.25${\le}$x${\le}$0.75) and $(Ni_{0.75}Mn_{1.25}Co_{1-x}Fe_x)O_4$ (0.25${\le}$x${\le}$0.75) thermistors increased with increasing $Fe_2O_3$ content.

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.28-29
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• 1997

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.288-294
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• 1998

Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.