• Resources Recycling
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• v.11 no.6
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• pp.31-37
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• 2002

Microstructure of aluminum alloys produced by the different mixing ratio of secondary ingot made by aluminum UBC (used beverage can) and virgin aluminum was investigated. The phase transitions of casted ingot by heat treatment were also studied. The alloys were melted at the electric resistance furnace, then casted using ceramic filter. Homogenization heat treatment was conducted at $615^{\circ}C$ for 10hrs to control cast microstructure. There were several kinds of phases, in as-cast condition, such as $\alpha$($Al_{12}$ $((Fe,Mn)_3$Si), $\beta$($Al_{6}$ (Fe,Mn)), and fine $Mg_2$Si phases. Especially, the amount of $\beta$-phase which was harmful in forming process was large. The $\beta$-Phase formed was transformed to u-phase by heat treatment. The fine $Mg_2$Si in the aluminum matix was also transformed to $\alpha$-phase by this heat treatment. Impurities filtered during casting process were identified as intermetallic compounds of Fe, Cu, Si.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.170-171
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• 2012

$Fe_2O_3$, Al, Cr과 Si 분말을 고 에너지 볼 밀링해서 나노분말을 제조한 후 고주파유도 가열 활성 연소합성 장치로 1분 이내의 짧은 시간에 합성 및 소결한 $Al_2O_3+4.65(Fe_{0.43}Cr_{0.17}Al_{0.323}Si_{0.077})$, $Al_2O_3$ + 5.33 ($Fe_{0.375}Cr_{0.11}Al_{0.3}Si_{0.075}$), $Al_2O_3$ + 6.15 ($Fe_{0.325}Cr_{0.155}Al_{0.448}Si_{0.072}$), $Al_2O_3$ + 3.3 ($Fe_{0.6}Cr_{0.3}Al_{0.6}$) 소결체 시편을 $700^{\circ}C$의 온도에서 100시간 동안 공기 중에서 산화 및 $N_2-H_20-H_2S$ 혼합 가스 내에서 황화 부식을 실시하였다. 그 결과 산화 및 황화 부식 후에 ${\alpha}-Al_2O_3$가 표면에 생성되어 보호 피막으로 작용하여 우수한 내식성을 보였다.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4205-4209
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• 2011

The $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ silicate was prepared by blending of $Li_2MnSiO_4$ and $Li_2FeSiO_4$ precursors with same molar ratio. The one of the silicates of $Li_2FeSiO_4$ is known as high capacitive up to ~330 mAh/g due to 2 mole electron exchange, and the other of $Li_2FeSiO_4$ has identical structure with $Li_2MnSiO_4$ and shows stable cycle with less capacity of ~170 mAh/g. The major drawback of silicate family is low electronic conductivity (3 orders of magnitude lower than $LiFePO_4$). To overcome this disadvantage, carbon composite of the silicate compound was prepared by sucrose mixing with silicate precursors and heat-treated in reducing atmosphere. The crystal structure and physical morphology of $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ was investigated by X-ray diffraction, scanning electron microscopy, and high resolution transmission electron microscopy. The $Li_2Mn_{0.5}Fe_{0.5}SiO_4$/C nanocomposite has a maximum discharge capacity of 200 mAh/g, and 63% of its discharge capacity is retained after the tenth cycles. We have realized that more than 1 mole of electrons are exchanged in $Li_2Mn_{0.5}Fe_{0.5}SiO_4$. We have observed that $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ is unstable structure upon first delithiation with structural collapse. High temperature cell performance result shows high capacity of discharge capacity (244 mAh/g) but it had poor capacity retention (50%) due to the accelerated structural degradation and related reaction.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.282-286
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• 2004

${\alpha}-Fe_{2}O_{3}$ films were prepared by ultrasonic spray pyrolysis (USP) on $SiO_{2}$ coated Si wafers using iron acetylacetonate as an iron precursor. The crystallographic properties and surface morphologies of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. X-ray photoelectron spectroscopy (XPS) was carried out to determine the Fe oxidation states. In order to observe stability of the films to temperature, the resistance variation of the films with an ambient temperature was measured. The effects of substrate temperature on the structural and electrical properties of the ${\alpha}-Fe_{2}O_{3}$ films were studied. The films were densified from the substrate temperature of $350^{\circ}C$. The grain size of the films grown at $400^{\circ}C$ was shown to be increased abruptly comparing with that of $350^{\circ}C$. The films showed a low resistance variation between the ambient temperature of $300^{\circ}C$ and $350^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.45-49
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• 2019

Relatively fine silicon carbide (SiC) crystalline aggregates have been synthesized with the carbonized rice husks, paper sludge, coffee grounds as the carbon sources and the silica powder. The main reaction source to obtain silicon carbide (SiC) aggregates from the mixture of carbon sources and silica was inferred as the gaseous silicon monoxide (SiO) phase, being created from this mixture through the carbothermal reduction reaction. The silicon carbide (SiC) crystalline aggregates, fabricated from the carbonized rice husks and paper sludge, coffee grounds and silica ($SiO_2$) powder, were investigated by XRD patterns, FE-SEM and FE-TEM images. In these specimens, obtained from the carbonized rice husks, paper sludge and silica, XRD patterns showed rather high strong peak of (111) plane near $35^{\circ}$. The FE-TEM images and patterns of specimens, synthesized from carbonized rice husks, paper sludge, coffee grounds and silica under Ar atmosphere, showed relatively fine particles under $1{\mu}m$ and crystalline peak (110) of silicon carbide (SiC) diffraction pattern.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.751-756
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• 1998

Effects of remote hydrogen plasma cleaning process parameters on the removal of Fe impurities on Si surfaces and the Fe removal mechanism were investigated. Fe removal efficiency is enhanced with decreasing the plasma exposure time and increasing the rf-power. The optimum plasma exposure time and rf-power are 1 min and 100W. respectively, in the range below 10 min and 100W. Fe removal efficiency is better under lower pressures than higher pressures, and the optimum $\textrm{H}_2$ flow rate was found to be 20 and 60sccm, respectively, under a low and a high pressure. The post-RHP(remote hydrogen plasma) annealing enhanced metallic contaminants removal efficiency, and the highest efficiency was achieved at $600^{\circ}C$. According to the AFM analysis results Si surface roughness was improved by 30-50%, which seems to be due to the removal of particles by the plasma cleaning. Also. Fe impurities removal mechanisms by remote hydrogen plasma are discussed.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.292-296
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• 2003

In an attempt to enhance phase transformation and homogenization of Mn-doped $FeSi_2$, mechanical alloying of elemental powders was applied. Cold pressing and sintering in vacuum were carried out to produce a dense microstructure, and then isothermal annealing was employed to induce a phase transformation to the $\beta$-$FeSi_2$semiconductor. Phase transitions in this alloy system during the process were investigated by using XRD, EDS and SEM. As-milled powders after 100 h of milling were shown to be metastable state. As-sintered iron silicides consisted of untransformed mixture of $\alpha$-$Fe_2$$Si_{5}$and $\varepsilon$-FeSi phases. $\beta$-$FeSi_2$phase transformation was induced by subsequent isothermal annealing at $830^{\circ}C$, and near single phase of $\beta$-$FeSi_2$was obtained after 24 h of annealing. Thermoelectric properties in terms of Seebeck coefficient, and electrical conductivity were evaluated and correlated with phase transformation. Seebeck coefficient electrical resistivity and hardness increased with increasing annealing time due to $\beta$ phase transformation.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.313-322
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• 1984

Phase relationships of the pseudobinary systems in melanotekite-plumboferrite and melanotekite-magnetoplumbite in $PbO-Fe_2O_3-SiO_3$ system were obtained. Dielectric electric and magnetic properties were measured in the chosen pseudo-ternary system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.188-192
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• 2016

In this work, the SiC powders were synthesized through the carbonized matter from the mixture of silica powder and rice husks. The SiC powders, obtained from the carbothermal reduction reaction of silica and carbonized rice husks, were investigated by XRD patterns, XPS, FE-SEM and FE-TEM. In the XRD patterns, the specimens showed clearly very high strong peak of (111) plane near $35^{\circ}$ as well as weak (220) and (311) peak respectively at approximately $60^{\circ}$ and $72^{\circ}$. Under Ar atmosphere, the power synthesized from the mixture (in case of mixing ratio, 6 : 4) of carbonized rice husks and silica showed mainly cubic SiC crystalline phase showing relatively lower ratio of hexagonal phase without residual carbon in XRD pattern. In the TEM analysis, the specimen, synthesized from carbonized rice husks and silica with mixing ratio of 6 : 4 under Ar atmosphere, showed relatively fine particles under $5{\mu}m$ and a crystalline SiC phase of (100) diffraction pattern.