• Proceedings of the KSME Conference
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• 2000.11b
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• pp.247-254
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• 2000

The base pressure of vacuum vessel of the KSTAR (Korea Superconducting Tokamak Advanced Research) Tokamak is to be a ultra high vacuum, $10^{-6}{\sim}10^{-7}Pa$, to produce clean plasma with low impurity containments. For this purpose, the KSTAR vacuum vessel and plasma facing components need to be baked up to at least $250^{\circ}C,\;350^{\circ}C$ respectively, within 24 hours by hot nitrogen gas from a separate baking/cooling line system to remove impurities from the plasma-material interaction surfaces before plasma operation. Here by applying the implicit numerical method to the heat balance equations of the system, overall temperature distributions of the KSTAR vacuum vessel and plasma facing components are obtained during the whole baking process. The model for 2-dimensional baking analysis are segmented into 9 imaginary sectors corresponding to each plasma facing component and has up-down symmetry. Under the resulting combined loads including dead weight, baking gas pressure, vacuum pressure and thermal loads, thermal stresses in the vacuum vessel during bakeout are calculated by using the ANSYS code. It is found that the vacuum vessel and its supports are structurally rigid based on the thermal stress analyses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.128-130
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• 1993

This paper presents the discharge characteristics of FTS system under verious discharge condition. E1ectron temperature and electron density are studied by double probe method. The Characteristics of discharge occurrence vol-tage and discharge current are significantly affected by magnetic flux density. And the best TiN thin film is obtained at 700[Vl, 400[gauss] and 1.0[mtorr].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.281-282
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• 2005

The AZO thin film was prepared on flexible substrate by Facing Targets Sputtering method. The substrate used the Polycarbonate(PC), thickness 200$\mu$m. In particular, the AZO thin film was prepared at room temperature because the substrate is weak in heat. The structural, electrical, optical properties of the AZO thin film were investigated and the surface was observed by microscope.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.144-145
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• 2006

In this study, the Al doped ZnO thin films were prepared by the facing targets sputtering(FTS) apparatus. The electrical characteristics, transmittance of ITO thin films were investigated as a function of varying input current and oxygen gas flow rate. As a result, the ITO thin film was prepared with a resistivity $6{\times}10-4[{\Omega}-cm]$ and transmittance 80% at visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.385-390
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• 2013

$(Ga_2O_3)_x(ZnO)_{100-x}$ (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the $Ga_2O_3$ content. The GZO film with an atomic ratio of $Ga_2O_3$ of x= 7 wt.%, shows the lowest resistivity of $7.5{\times}10^{-4}{\Omega}{\cdot}cm$. The GZO films were also prepared at various substrate temperatures from room temperature to $300^{\circ}C$, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of $2.8{\times}10^{-4}{\Omega}{\cdot}cm$ that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of $300^{\circ}C$ by using the FTS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• Nuclear Engineering and Technology
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• v.48 no.4
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• pp.915-924
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• 2016

After a severe accident to the nuclear reactor, the in-vessel retention strategy is a key way to prevent the leakage of radioactive material. Nanofluid is a steady suspension used to improve heat-transfer characteristics of working fluids, formed by adding solid particles with diameters below 100nm to the base fluids, and its thermal physical properties and heat-transfer characteristics are much different from the conventional working fluids. Thus, nanofluids with appropriate nanoparticle type and volume concentration can enhance the heat-transfer process. In this study, the moving particle semi-implicit method-meshless advection using flow-directional local grid method is used to simulate the bubble growth, departure, and sliding on the downward-facing heating surface in pure water and nanofluid (1.0 vol.% $Al_2O_3/H_2O$) flow boiling processes; additionally, the bubble critical departure angle and sliding characteristics and their influence are also investigated. The results indicate that the bubble in nanofluid departs from the heating surface more easily and the critical departure inclined angle of nanofluid is greater than that of pure water. In addition, the influence of nanofluid on bubble sliding is not significant compared with pure water.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.281-286
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• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.