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http://dx.doi.org/10.4313/JKEM.2009.22.7.595

Characteristics of SiO2 Gas Barrier Films as a Function of Process Conditions in Facing Target Sputtering (FTS) System  

Bae, Kang (대구가톨릭대학교 전자공학과)
Wang, Tae-Hyun (대구가톨릭대학교 전자공학과)
Sohn, Sun-Young (대구가톨릭대학교 전자공학과)
Kim, Hwa-Min (대구가톨릭대학교 전자공학과)
Hong, Jae-Suk ((주)CTC)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.7, 2009 , pp. 595-601 More about this Journal
Abstract
For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.
Keywords
Facing target sputtering; Silicon oxide; Permanent magnet array; High deposition rate; Low deposition temperature;
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Times Cited By KSCI : 3  (Citation Analysis)
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