• The Journal of Korean Academy of Prosthodontics
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• v.57 no.2
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• pp.160-170
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• 2019

The anterior guidance is one of the important factors in prosthodontic treatment of anterior teeth. The lingual surface shape of anterior restorations is so critical that small errors of treatment procedure can cause discomfort of the patient and disharmony of the dentition. If the anterior restorations are achieved harmonious anterior guidance through the fabrication and adjustment of provisional restorations, it is important to accurately reproduce the lingual surface shape of provisional restorations as the final prosthesis. In this case report, it was used the modified Dahl principle and copy-milled technique of computer-aided design/computer-aided manufacturing (CAD/CAM) system for systematic diagnosis and treatment. Therefore, we tried to reconstruct the restoration shape more precisely by setting the appropriate anterior guidance and superimposing the digital image of the abutment teeth and the provisional restorations. Thus, by promoting functional and esthetic recovery, this case report demonstrates satisfying results to both the patients and dentist.

• Composites Research
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• v.35 no.6
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• pp.371-377
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• 2022

Triboelectric nanogenerator (TENG) devices have generated a lot of interest in recent decades. TENG technology, which is one of the technologies for harvesting mechanical energy among the energy wasted in the environment, is obtained by the dual effect of electrostatic induction and triboelectric charging. Recently, a multilayer thin film stacking method (or layer-by-layer (LbL) self-assembly technique) is being considered as a method to improve the performance of TENG and apply it to new fields. This LbL assembly technology can not only improve the performance of TENG and successfully overcome the thickness problem in applications, but also present an inexpensive, environmentally friendly process and be used for large-scale and mass production. In this review, recent studies in the accomplishment of LbL-based materials for TENG devices are reviewed, and the potential for energy harvesting devices reviewed so far is checked. The advantages of the TENG device fabricated by applying the LbL technology are discussed, and finally, the direction and perspective of this fabrication technology for the implementation of various ultra-thin TENGs are briefly presented.

• The Journal of Korean Academy of Prosthodontics
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• v.61 no.3
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• pp.245-256
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• 2023

When restoring with a dental digital system for implant-supported prosthesis, a double digital scanning technique is required: an intraoral scan of the three-dimensional implant location and intraoral scan after placement of temporary denture or provisional prosthesis. During the intraoral scan, the use of scan body as a stable landmark can improve the accuracy of digital impression and simplify laboratory process. In this case, a full-digital system was used to plan and fabricate a custom abutment, provisional prosthesis, and definitive prosthesis. After implant placement, the scan area of the intraoral scan body connected with implant and the intraoral scan body marked on the inside of temporary denture were superimposed. Out of the superimposed files, a custom abutment and provisional prosthesis were fabricated which match the vertical dimension of temporary denture, and definitive prosthesis was fabricated based on provisional prosthesis. We report this case because result has been functionally and esthetically satisfactory by using vertical dimension and central relation set during the fabrication of temporary denture to the definitive prosthesis.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.6
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• pp.407-410
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• 2018

As the operating frequency of an electromagnetic wave increases, the maximum output and wavelength of the wave decreases, so that the size of the circuit cannot be reduced. As a result, the fabrication of a circuit with high power (of the order of or greater than kW range) and terahertz wave frequency band is limited, due to the problem of circuit size, to the order of ${\mu}m$ to mm. In order to overcome these limitations, we propose a source design technique for 0.1 THz~0.3 GW level with cylindrical shape (diameter ~2.4 cm). Modeling and computational simulations were performed to optimize the design of the high-power electromagnetic sources based on Cherenkov radiation generation technology using the principle of plasma wakefield acceleration with ponderomotive force and artificial dielectrics. An effective design guideline has been proposed to facilitate the fabrication of high-power terahertz wave vacuum devices of large diameter that are less restricted in circuit size through objective verification.

• Korean Chemical Engineering Research
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• v.45 no.2
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• pp.149-154
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• 2007

Nanoimprint lithography (NIL) is useful technique because of its low cost and high throughput capability for the fabrication of sub-micrometer patterns which has potential applications in micro-optics, magnetic memory devices, bio sensors, and photonic crystals. Usually, a chemical surface treatment of the stamp is needed to ensure a clean release after imprinting and to protect the expensive original master against contamination. Meanwhile, adhesion promoter between resin and substrate is also important in the nanoscale pattern. In this work, we have investigated the effect of surface treatment using silane coupling agent as release layer and adhesion promoter for UV-Nanoimprint lithography. Uniform SAM (self-assembled monolayer) could be fabricated by vapor deposition method. Vapor phase process eliminates the use of organic solvents and greatly simplifies the handling of the sample. It was also proven that 3-acryloxypropyl methyl dichlorosilane (APMDS) could strongly improve the adhesion force between resin and substrate compared with common planarization layer such as DUV-30J or oxygen plasma treatment.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.

• Solar Energy
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• v.10 no.3
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• pp.60-65
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• 1990

[ $n^+-p^+$ ] InP homojunction solar cells were fabricated by thermal diffusion of sulphur into a $p^+$-InP wafer($p=4{\times}10^{18}cm^{-3}$), and a SiO film($600{\AA}$ thick) was coated on the $n^+$ layer as an antireflection(AR) coating by an e-beam evaporator. The volume of the cells were $5{\times}5{\times}0.3mm^3$. The front contact grids of the cells with 16 finger pattern of which width and space were $20{\mu}m$ and $300{\mu}m$ respectively, were formed by photo-lithography technique. The junction depth of sulphur were as shallow as about 0.4r m We found out the fabricated solar cells that, with increasing the diffusion time, short circuit current densities($J_{sc}$), series resistances($R_s$) and energy conversion efficiencies(${\eta}$) were increased. The cells show good spectral responses in the region of $5,000-9,000{\AA}$. The short circuit current density, the open circuit voltage( $V_{oc}$), the fill factor(F.F) and the energy conversion efficiency of the cell were $13.16mA/cm^2$, 0.38V, 53.74% and 10.1% respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• ETRI Journal
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• v.38 no.4
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• pp.675-684
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• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.