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The Surface Treatment Effect for Nanoimprint Lithography using Vapor Deposition of Silane Coupling Agent  

Lee, Dong-Il (Nano-Mechanical Systems Research Center, Korea Institute of Machinery & Materials)
kim, Ki-Don (Nano-Mechanical Systems Research Center, Korea Institute of Machinery & Materials)
Jeong, Jun-Ho (Nano-Mechanical Systems Research Center, Korea Institute of Machinery & Materials)
Lee, Eung-Sug (Nano-Mechanical Systems Research Center, Korea Institute of Machinery & Materials)
Choi, Dae-Geun (Nano-Mechanical Systems Research Center, Korea Institute of Machinery & Materials)
Publication Information
Korean Chemical Engineering Research / v.45, no.2, 2007 , pp. 149-154 More about this Journal
Abstract
Nanoimprint lithography (NIL) is useful technique because of its low cost and high throughput capability for the fabrication of sub-micrometer patterns which has potential applications in micro-optics, magnetic memory devices, bio sensors, and photonic crystals. Usually, a chemical surface treatment of the stamp is needed to ensure a clean release after imprinting and to protect the expensive original master against contamination. Meanwhile, adhesion promoter between resin and substrate is also important in the nanoscale pattern. In this work, we have investigated the effect of surface treatment using silane coupling agent as release layer and adhesion promoter for UV-Nanoimprint lithography. Uniform SAM (self-assembled monolayer) could be fabricated by vapor deposition method. Vapor phase process eliminates the use of organic solvents and greatly simplifies the handling of the sample. It was also proven that 3-acryloxypropyl methyl dichlorosilane (APMDS) could strongly improve the adhesion force between resin and substrate compared with common planarization layer such as DUV-30J or oxygen plasma treatment.
Keywords
Nanoimprint; Silane Coupling Agent; Adhesion Promoter;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 Resnick, D. J., Sreenivasan, S. V. and Willson, C. G., 'Step & Flash Imprint Lithography,' Materialstoday, 8(2), 34-42(2005)
2 Austin, M. D., Ge, H., Wu, W., Li, M., Yu, Z., Wasserman, D., Lyon, S. A. and Chou, S. Y., 'Fabrication of 5 nm Line Width and 14nm Pitch Features by Nanoimprint Lithography,' Appl. Phys. Lett., 84(26), 5299-5301(2006)   DOI   ScienceOn
3 Choi, D. G., Jeong, J. H., Sim. Y. S., Lee, E. S., Kim, W, S. and Bea, B. S., 'Fluorinated Organic-inorganic Hybrid Mold as a New Stamp for Nanoimprint and Soft Lithography,' Langmuir, 21(21), 9390-9392(2005)   DOI   ScienceOn
4 Colburn, M., Johnson, S., Stewart, M., Damle, S., Bailey, T., Choi, B., Wedlake, M., Michealsom, T., Sreenivasan, S. V., Ekerdt, J. and Willson, C. G., 'Step and Flash Imprint Lithography: A New Approach to High-resolution Patterning,' Proc. SPIE., 3676(1), 379-389(1999)
5 Chou, S. Y., Krauss, P. R. and Renstrom, P. J., 'Nanoimprint Lithography,' J. Vac. Sci. Tech. B., 14(6), 4129-4133(1996)   DOI   ScienceOn
6 Kawai, A., 'Adhesion and Cohesion Properties of dot Resist Patterns Ranging from 84 to 364 nm Diameter Analyzed by Direct Peeling Method with Atomic Force Microscope Tip,' J. Photopolym. Sci. Technol., 15(1), 121-126(2002)   DOI   ScienceOn
7 Bailey, T., Choi, B. J., Colburn, M., Meissl, M., Shaya, S,. Ekerdt, J. G., Sreenivasan, S. V. and Willson, C. G., 'Step and Flash Imprint Lithography: Template Surface Treatment and Defect Analysis,' J. Vac. Sci. Tech. B., 18(6), 3572-3577(2000)   DOI   ScienceOn
8 Haisma, J., Verheijen, M. and Heuvel, K., 'Mold-Assisted Nanolithography: A Process for Reliable Pattern Replication,' J. Vac. Sci. Tech. B., 14(6), 4124-4128(1996)   DOI   ScienceOn
9 Ruchhoeft, P., Colburn, M., Choi, B., Nounu, H., Johnson, S., Bailey, T., Damle, S. and Willson, C. G., 'Patterning Curved Surfaces : Template Generation by Ion Beam Proximity Lithography and Relief Transfer by Step and Flash Imprint Lithography,' J. Vac. Sci. Tech. B., 17(6), 2965-2969(1999)   DOI   ScienceOn
10 Jeong, J. H., Sim, Y. S., Sohn, H. K. and Lee, E. S., 'UV-nanoimprint Lithography Using an Elementwise Patterned Stamp,' Microelectron. Eng., 75(2), 165-171(2004)   DOI   ScienceOn
11 Bunker, B. C., Carpick, R. W., Assink, R. A., Thomas, M. L., Hankins, M. G., Voigt, J. A., Sipola, D., De bore, M. P. and Gulley, G. L., 'The Impact of Solution Agglomeration on the Deposition of Self-Assembled Monolayer,' Langmuir, 16(20), 7742-7751(2000)   DOI   ScienceOn
12 Chou, S. Y., Krauss, P. R. and Renstrom, P. J., 'Imprint Lithography with 25-nanometer Resolution,' Science, 272(5258), 85-87 (1996)   DOI   ScienceOn
13 Jung, G. Y., Li, Z., Wu, W., Ganapathiappan, S., Li, X., Olynick, L. D., Wang, S. Y., Tong, W. M. and Williams, R. S., 'Improved Pattern Transfer in Nanoimprint Lithography at 30 nm Half- Pitch by Substrate-Surface Functionalization,' Langmuir, 21(14), 6127-6130(2005)   DOI   ScienceOn