• 한국세라믹학회지
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• 제43권6호
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• pp.351-357
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• 2006

The fabrication process of the honeycomb filter was investigated using synthesized cordierite with the addition of pore former and extrusion additives (either organic matter or graphite). Also, the effect of additives on the resultant properties of honeycomb filter such as porosity, thermal expansion coefficient and mechanical strength were investigated. With increasing the organic matter up to 10 wt%, porosity was increased but compressive strength was decreased. With increasing the graphite content, however, both porosity and compressive strength were increased. The specimen with an optimum processing condition (C-17A30G, sintering at $1150^{\circ}C$) was demonstrated 59% in porosity, 69 MPa in compressive strength, and $2.4{\times}10^{-6}/^{\circ}C\;(25{\sim}1000^{\circ}C$) in thermal expansion coefficient, which physical properties are appropriate for the honeycomb filter applications.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.119-123
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• 2006

This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.84-89
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• 1992

The polycrystalline $CuInS_2$ thin films are prepared by vacuum heat treatment of layer, which is deposited by vaccum evaporation in order. The electrical and optical properties of the films are investigated at various sulfur deposition mole rate, substrate temperature, heat treatment temperature and time. From data, n type-$CuInS_2$ exhibits resistivity, transmittance and energy band gap with 142[${\Omega}{\cdot}cm$], 73[%], and 1.5[eV] respectively at optimum fabrication condition. Finally, the films are fabricated with chalcoprite structure.

• 산업공학
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• 제21권2호
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• pp.141-150
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• 2008

In this paper, an efficient control method for semiconductor fabrication process is presented. Generally, control is performed with data which is under the influence of process disturbance. EWMA is one of the most popular control methods in semiconductor fabrication that effectively deals with varying process condition. A new method using EWMA, called the Dual Damping EWMA, is presented in this study to reduce over-control by separating weight factor of input and output. The goal is to reflect Drift but reduce the effects of White noise in run to run control. Simulation is performed to evaluate the performance of DPEWMA and to compare with EWMA and Double EWMA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.99-101
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• 1996

This paper is concerned with the fabrication of (Fe,Co)-Si-B amorphous magneto-strictive wire which attracts strong attention as a new sensor material. First, we put the ingot of (Fe$\sub$1-x/Co$\sub$x/)$\sub$77/Si$\sub$8/B$\sub$15/ composition into quartz tube. Then, under the condition of 400MHz and 8kW, we melt and mix the in-got in the high frequency induction furnance. After that, we obtain the magnetostrictive wire of 100∼150$\mu\textrm{m}$ in diameter by injection and rapid quenching within the high rotating water. Finally, we find that the wire is under the amorphous state.

• 한국분말재료학회지
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• 제9권2호
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• pp.103-109
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• 2002

To investigate the fabrication possibility of a polymer particle dispersed metal matrix composite, polytetrafluorothylene (PTFE) particles were incorporated into the Al by the powder metallurgy process. The characteristics of a PTFE/Al composite were evaluated by measuring the density and hardness, and analysis of XRD, FT-Raman and microstructure. And wear properties of these composites were evaluated under the dry wear condition. It was possible to obtain the PTFE particles stably dispersed Al matrix composites by the hot press process at the sintering temperature of $500^{\circ}C$. The wear coefficient of a PTFE/Al compoite decreased with increasing of the volume fraction of PTFE. The wear weight of a PTFE/Al composite increased with increasing of the volume fractionof PTFE in the range of 0~10 vol.%PTFE, and showed maximum value at 10 vol.%PTFE, and then decreased at 20vol.%PTFE.

• Journal of Electrical Engineering and information Science
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• 제2권4호
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• pp.106-110
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• 1997

A new SOI NMOSFET with a 'LOCOS-like' shape self-aligned polysilicon gate formed on the recessed channel region has been fabricated by a mix-and-match technology. For the first time, a new scheme for implementing self-alignment in both source/drain and gate structure in recessed channel device fabrication was tried. Symmetric source/drain doping profile was obtained and highly symmetric electrical characteristics were observed. Drain current measured from 0.3${\mu}{\textrm}{m}$ SOI devices with V\ulcorner of 0.77V and Tox=7.6nm is 360$mutextrm{A}$/${\mu}{\textrm}{m}$ at V\ulcorner\ulcorner=3.5V and V\ulcorner=2.5V. Improved breakdown characteristics were obtained and the BV\ulcorner\ulcorner\ulcorner(the drain voltage for 1 nA/${\mu}{\textrm}{m}$ of I\ulcorner at V=\ulcorner\ulcorner=0V) of the device with L\ulcorner\ulcorner=0.3${\mu}{\textrm}{m}$ under the floating body condition was as high as 3.7 V. Problems for the new scheme are also addressed and more advanced device structure based on the proposed scheme is proposed to solve the problems.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.785-789
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• 2006

BiSrCaCuO(2223) superconductor was fabricated by the thermal pyrolysis method. The superconducting precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12 h is not in the amorphous state as expected but in a crystalline state. In this paper, the establishment of fabrication condition was examined so as to improve the related properties to the practical use of BiSrCaCuO superconductor, and we reported the production of the BiSrCaCuO by the pyrolysis method.

• 대한치과기공학회지
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• 제23권1호
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• pp.107-114
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• 2001

R.P.D fabrication can be made if the skills already is properly used in the manufacturing press. You may feel extremely comfortable to wear it. The material used has high elasticity that it can endure the hole process of Acetal Wax pattern casting without any deformation moreover its adaptability is not bad. Because of the poor financial condition of patterns and health insurance, Acetal R.P.D Framework can be one of the best alternatives used for setting clasp partial denture cheaply. R.P.D Framework is aesthetically excellent. The color caused by saliva is so similar to that of the rest of teeth that even dentists as well as patients can not recognize clasp arm. Clasp also helps to secure prosthesis ideally without damaging teeth due to its deep position downward. Since dentists and patients have a good reaction to clasp so far, we are encouraged to apply it to other technical fields.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.13-17
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• 1997

It is identified that the diamond films grown o bias-treated (100) silicon showed different surface morphologies and film textures according to the initial applied dc bias voltage at the same growth condition. The highly oriented diamond film (HODF) was successfully grown on -200 V bias-treated silicon substrate in which the heteroepitaxial relation of $(100)_{dimond}//(100)_{si}\; and\; [110]_{diamond}//[110]_{si}$ was identified. On the contrary, the heteroepitaxial relation was considerably disturbed in the samples bias-voltage was a key factor in growing the highly oriented diamond film on (100) silicon substrate. Considering the experimental results, we proposed a new model about heteroepitaxial diamond growth on silicon, in which 9 diamond unit cell are matched with 4 silicon cells and the bond covalency of both atoms is satisfied via the intermediate layer at the interface as well.