• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.299-302
• /
• 2009

Oxygen ionic conductors of YSZ electrolyte in SOFC unit cell are applied to anode and cathode as well as electrolyte to have triple-phase-boundaries(TPB) of electrochemical reaction, and it is required to decrease the sintering temperature of anode-supported electrolyte by the nanoscale of YSZ powder.In this report, nanoscale YSZ powder was synthesized by the chemical co-precipitation method. The particle size, surface area and morphology of the powder were observed by SEM and BET. Thin film electrolyte of under 10㎛ was fabricated by tape casting using the synthesized YSZ powder, and ionic conductivity and gas permiability of electrolyte film were evaluated. Finally, the SOFC unit cell was fabricated using the anode-supported electrolyte prepared by a tape casting method and co-sintering. Electrochemical evauations of the SOFC unit cell, including measurements such as power density and impedance, were performed and analyzed.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.295-298
• /
• 2009

Oxygen ionic conductors of CeScSZ electrolyte in SOFC unit cell are applied to anode and cathode as well as electrolyte to have the triple-phase-boundaries of electrochemical reaction, and it is required to decrease the sintering temperature of anode-supported electrolyte by the nanoscale of CeScSZ electrolyte powder. In this report, nanoscale CeScSZ electrolyte powder was synthesized by chemical synthesis method. The particle size, surface area and morphology of the powder were observed by SEM and BET. Thin film electrolyte of under $10{\mu}m$ was fabricated by tape casting using the synthesized CeScSZ electrolyte powder, and ionic conductivity and gas permeability of electrolyte film were evaluated. Finally the SOFC unit cell was fabricated using the anode-supported electrolyte prepared by a tape casting method and co-sintering, in which the active layer, measuring $20{\mu}m$, was introduced in the anode layer to provide a more efficient reaction. Electrochemical evaluations of the SOFC unit cell, including measurements such as power density and impedance, were performed and analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.581-584
• /
• 2002

In this work, a CPW resonator was designed and fabricated to investigate the basic microwave properties, such as effective dielectric constant, of BST thin films. Their properties were used as basic data to simulate and design CPW tunable bandpass filter. We also report on gold/$Ba_{0.5}Sr_{0.5}TiO_3$(BST) ferroelectric thin film C-band tunable bandpass filters(BPFs) designed and fabricated on magnesium oxide substrates using CPW structure. The 2 pole filter was designed for a center frequency of 5.88 GHz with a bandwidth of 9 %. The BST based CPW filter offers a high sensitivity parameter as well as a low loss parameter. The tuning range for the bandpass filter with CPW structure was determined to be 170 MHz.

• ETRI Journal
• /
• v.35 no.6
• /
• pp.1152-1155
• /
• 2013

A cost-effective and simple solder on pad (SoP) process is proposed for a fine-pitch microbump interconnection. A novel solder bump maker (SBM) material is applied to form a 60-${\mu}m$ pitch SoP. SBM, which is composed of ternary Sn3.0Ag0.5Cu (SAC305) solder powder and a polymer resin, is a paste material used to perform a fine-pitch SoP through a screen printing method. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder, the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. Test vehicles with a daisy chain pattern are fabricated to develop the fine-pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si chip has 6,724 bumps with a 45-${\mu}m$ diameter and 60-${\mu}m$ pitch. The chip is flip chip bonded with a Si substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of the underfill. The optimized bonding process is validated through an electrical characterization of the daisy chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and microbump interconnection using a screen printing process.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1174-1177
• /
• 2006

A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by $PMMA\;{\rightarrow}\;MNB$ showed much better Ion behavior than those fabricated by $MNB\;{\rightarrow}\;PMMA$. We will report the important physical and electrical performance difference associated with surface treatment sequence.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.1
• /
• pp.1-6
• /
• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.7
• /
• pp.437-440
• /
• 2017

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

• Journal of Electrochemical Science and Technology
• /
• v.9 no.2
• /
• pp.118-125
• /
• 2018

Herein we report on the selective synthesis and direct growth of nanostructures using an aqueous chemical growth route. Specifically, Al-doped ZnO (AZO) nanoflakes (NFs) are vertically grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) sheets at low temperature and ambient environment. The morphological, optical, and electrical properties of the NFs are investigated as a function of the Al content. Furthermore, these AZO-NFs are integrated into perovskite solar devices as the electron transport layer (ETL) and the fabricated devices are tested for photovoltaic performance. It was determined that the doping of AZO-NFs significantly increases the performance metrics of the solar cells, mainly by increasing the short-circuit current of the devices. The observed enhancement is primarily attributed to the improved conductivity of the doped AZO-NF, which facilitates charge separation and reduces recombination. Further, our flexible solar cells fabricated through this low temperature process demonstrate an acceptable reproducibility and stability when exposed to a mechanical bending test.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.1577-1580
• /
• 2003

In the recent years, as the research and the development of micro and precision machinery become active, the interest of micro actuators using SMA(Shape Memory Alloy) has been increased. The dynamic characteristic analysis of SMA is necessary for actuator application and many common researches report the material characteristics of SMA sufficiently. However, the research on dynamic characteristics is very deficient. In this paper, the helical spring are fabricated with NiTi SMA wire of high resistivity. The force, response speed, temperature, and displacement are measured by digital force gauge, infrared thermometer, and laser displacement sensor so that the dynamic characteristics of this SMA is analyzed. Also, bidirectional actuator was fabricated and experimented for its performance.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2013.04a
• /
• pp.809-809
• /
• 2013

We report a new method for highly controllable local patterning of a hydrogel on microfabricated cantilevers and fabrication of all hydrogel microcantilevers. We constructed a dynamic mask based photolithography setup using a commercial beam projector, a 3-axis microstage and other optical components. Dynamic masks generated from the beam projector controlled the shape, size, and position of hydrogel patterns while the 3-axis microstage mainly controlled the thickness of hydrogel patterns and hydrogel microcantilevers. Using the constructed setup, polyethyleneglycol diacrylate (PEGDA) was patterned on microfabricated cantilevers in a highly controlled manner. Currently, the smallest PEGDA patternable is a 5-${\mu}m$-diameter circle with a thickness of ~$10{\mu}m$. To confirm thicknesses of patterned PEGDAs on silicon microcantilevers, resonance frequencies of microcantilevers were measured before and after each PEGDA patterning. Thicknesses extracted from resonance measurements showed good agreement with measurements using an optical microscope. In addition, PEGDA microcantilevers with various dimensions and thicknesses were fabricated on glass and silicon substrates. Surfaces of fabricated all hydrogel microcantilevers were flat enough to facilitate other post processing and to be used for various sensing applications.