• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.403-404
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• 2008

In this study, we prepared ITO thin film on glass, polycarbonate (PC) and polyethersulfone (PES) substrate in Facing Targets sputtering (FTS) system. Properties of as-deposited thin films's aging change were investigated as a function of time placed in the air. The electrical and optical properties of as-deposited thin films were employed by a four point probe and an UV/VIS spectrometer, an X-ray diffractometer (XRD), a Field Emission Scanning Electron Microscope(FESEM) and a Hall Effect measurement. As a result, as time went by, transmittance of all films did not change but resistivity of films was decreasing.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.106-109
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• 2005

The ITO thin films for Top-Emitting Organic Light Emitting Devices (TOLEDs) were prepared on cell(LiF/Organic Layer/Bottom Electrode : ITO ) by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying gas pressure, input current and distance of target to target($D_{T-T}$). As a function of sputtering conditions, I-V characteristics of prepared ITO thin films on cell were measured by 4156A (HP). In the results, when the In thin films were deposited at $D_{T-T}$ 70mm and working pressure 1mTorr, the leakage current of ITO/cell was about 11[V] and 5E-6[$mA/cm^2$].

• 한국진공학회지
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• 제17권2호
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• pp.102-108
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• 2008

대향 타겟식 스퍼터링법 (Facing Targets Sputtering)을 이용하여 유리기판위에 증착한 Ag/ZnO 다층 박막의 특성을 연구하였다. Ag 박막의 높은 전도도와 투과율을 나타내는 공정조건을 찾기 위하여, 증착시간, 기판온도 변화에 따른 Ag박막의 특성을 살펴보았으며, ZnO 박막의 두께 변화에 따른 Ag/ZnO 다층박막의 특성을 살펴보았다, 10초간 증착한 Ag 박막은 연속된 막구조를 가지지 못하여, 30초간 증착된 막에 비해 전기적, 광학적 특성이 저하되는 것을 확인할 수 있었다. ZnO 박막의 AFM 측정 결과 박막의 거칠기(Rrms) 값의 변화에 따라 Ag/ZnO박막의 특성에 영향을 미쳤으며, 거칠지 않은 표면을 지닌 박막에서 Ag 박막 증착 시 좋은 특성을 나타냈다. 제작된 박막은 four point probe, UV/VIS spectrometer, AFM을 사용하여 전기적, 광학적, 구조적 특성을 조사하였다. 제작결과 Ag/ZnO 다층박막의 면저항은 9.25 $[\Omega/sq.]$을 나타내었으며, 가시광영역에서 광투과율은 80%이상을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.201-202
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• 2009

ZnO:Al transparent conductive films for solar cells were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of 2w.t..%. AZO and Zn metal. ZnO:Al thin films were deposited as a function film thickness. A base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the structural, electrical and optical properties of the deposited films were investigated using a four-point probe (Chang-min), an X-ray diffraction (Rigaku), a Hall Effect measurement (Ecopia), an UV/VIS spectrometer (HP) and a $\alpha$-step (Tencor). The lowest resistivity of film was $5.67{\times}10^{-4}[{\Omega}-cm]$ at 500nm. The average transmittance of over 80% was seen in the visible range.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.669-673
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• 2008

ITO thin film was deposited on PC substrate in Facing Targets Sputtering (FTS) system with various sputtering conditions. After it is applied to external bending force, we investigated how change the surface and electrical property of as-deposited ITO thin film. As the L(face-plate distance) of substrate decreases, it found that the maximum crack density is increasing at the center position and decreasing crack density as goes to the edge. So to apply same curvature (r) and bending force to PC substrate with ITO thin film, we fixed the L that is equal to curvature radius (2r). Before bending test, ITO thin films that deposited in the input current of 0.4 A and thickness of 200 nm already had biaxial tensile failure because of each different CTE (Coefficient of Thermal Expansion) and Others had been shown no bending or crack. After bending test, all samples had been shown cracks at about 200 times and as increasing the crack density, resistivity increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.140-143
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• 2002

In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.711-715
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• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.471-472
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• 2008

The properties of Al doped ZnO (AZO) thin flim for solar cells with various input currents were studied in this paper. Using facing target sputtering with 2wt.% AZO targets, TCO films were deposited on glass(corning 2948) substrate at room temperature. AZO thin films were deposited by 0.2A, 0.4A, 0.6A and 0.8A at the thickness of 300nm. Electrical, optical and structural of thin films investigated by a Hall effect measurement (Ecopia), an UV-VIS spectrometer(HP) and a X-ray diffractometer (Rigaku). As a results, all thin films showed transmittance about 80%, respectively and resistivity was $7.67\times10^{-4}\Omega$-cm at 0.6A.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.65-67
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• 2005

The Al electrode for OLED was prepared by Facing Targets Sputtering(FTS) system which can reduce the damage of organic layer. The Al thin films were deposited on the cell (Lif/EML/HTL/Bottom electrode : ITO) for examination the current-voltage properties of OLED with magnetic field distribution between two faced targets. Thickness and current-voltage properties of Al thin films are measured by ${\alpha}-step$ and semiconductor parameter analyzer (HP4156A), respectively.