• Electrical & Electronic Materials
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• v.7 no.6
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.620-623
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• 2004

In this study, the discharge characteristic of FTS (Facing Targets Sputtering) apparatus was investigated using metal target paramagnetic and ceramic targets such as Zn, Al, $ZnO:Al(Al_2O_3)$, ITO. Threshold voltage and stable stage of discharge show different with target species. Compare with commercial sputtering apparatus, the FTS apparatus is a high-speed sputter method that promotes ionization of sputter gas by screw and reciprocate moving high-speed ${\gamma}$electrons which arrays two targets facing each other, inserts plasma arresting magnetic field to the parallel direction of the center axis of both targets, discharged from targets and accelerated at the cathode falling area. Especially, we notice that the FTS method using ceramic target has stable discharge characteristic even by DC power source.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.216-220
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• 2001

Piezoelectric ZnO thin films by Facing Targets Sputtering(FTS) method were deposited on slide glass. The Facing Targets Sputtering system can deposit thin film at plasma-free condition and change the deposition condition in wide range. The characteristics of ZnO thin films changed with power, working pressure and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step(Tencor) and SEM(Scanning Electron Microscopy) analyses. In the results, we suggest that FTS system is very suitable for the preparation of high quality ZnO thin films with good c-axis orientation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.252-252
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• 2010

AIZTO (Al-In-Sn-ZnO) thin film was deposited on glass substrate at room temperature by facing target sputtering (FTS) system. The FTS system was designed to array two targets facing each other. Two different kinds of targets were installed on FTS system. We used the ITO (In2O3 90wt%, SnO2 10wt%) target and the AZO (ZnO 98wt%, Al2O3 2wt%). AIZTO films were deposited in each of the applied power of the targets. The electrical and structural properties of the as-deposited AIZTO thin films were then examined by hall-effect measurement, and by using atomic force microscope (AFM), X-ray diffractometer (XRD), and energy dispersive x-ray spectroscopy (EDX). The optical property was measured by an UV-VIS spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.685-687
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.418-422
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• 1998

The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure($P_Ar$, 0.1~10mTorr) by using FTS apparatus at temperature of $40^{\circ}C and 220^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.203-206
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• 2004

In this study the ITO thin films were prepared by using FTS(Facing Targets Sputtering) system. The electric characteristics, transmittance, surface roughness of ITO thin films were investigated as a function of varying input current and working gas pressure at room temperature. As a result, the ITO thin film was fabricated with resistivity $6{\times}10^{-4}[\Omega{\cdot}cm]$, carrier mobility $52.11[cm^2/V{\cdot}sec]$, carrier concentration $1.72{\times}10^{20}[cm^{-3}]$ of ITO thin film at working pressure 1mTorr and input current 0.6A.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.271-275
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• 2006

Al oped zinc oxide (AZO) films were prepared by Facing Targets Sputtering (FTS) system for TCO applications. The electrical, optical and structural properties of AZO thin films have been investigated with input current, oxygen gas flow ratio and substrate temperature. Deposition was carried out at room temperature and $200^{\circ}C$. Working gas pressures were fixed at 1mTorr. As a result, AZO thin film deposited with an optical transmittance over 80 % and a resistivity about $10^{-4}{Omega}{\cdot}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.578-581
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• 1999

The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.30-34
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• 2016

We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under $10^{-4}[{\Omega}{\cdot}cm]$ and a transmittance of more than 85 % in the visible range.