• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.591-600
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• 2010

In this paper, three kinds of 24 GHz low-power CMOS cross-coupled voltage controlled oscillators are designed and fabricated for a short-range radar applications using TSMC 0.13 ${\mu}m$ CMOS process. The basic CMOS crosscoupled voltage controlled oscillator is designed for oscillating around a center frequency of 24.1 GHz and subthreshold oscillators are developed for low power operation from it. A double resonant circuit is newly applied to the subthreshold oscillator to improve the problem that parasitic capacitance of large transistors in a subthreshold oscillator can push the oscillation frequency toward lower frequencies. The fabricated chips show the phase noise of -101~-103.5 dBc/Hz at 1 MHz offset, the output power of -11.85~-15.33 dBm and the frequency tuning range of 475~852 MHz. In terms of power consumption, the basic oscillator consumes 5.6 mW, while the subthreshold oscillator does 3.3 mW. The subthreshold oscillator with the double resonant circuit shows relatively lower power consumption and improved phase noise performance while maintaining a comparable frequency tuning range. The subthreshold oscillator with double resonances has FOM of -185.2 dBc based on 1 mW DC power reference, which is an about 3 dB improved result compared with the basic oscillator.

• Journal of The Korean Society of Grassland and Forage Science
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• v.17 no.2
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• pp.101-109
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• 1997

Nine oat(Avena sativa L.) cultivars have been recommended as the govemment recommended forage cultivars since 1984, however, their forage performance and quality have mostly been tested at two locations, such as Suweon in the Middle Northwestem Coast Region and Sunghwan in the Middle Southwestern Coast Region. Therefore, the objective of this experiment was to retest the forage performance and quality of six government recommended oat cultivars at five scattered locations, such as Icheon, Suweon, Sunghwan, Keongsan and Kwangju fom 1992 to 1994 with the intention of improving recommendations to dairy farmers. Among the oat cultivars tested, "West" was the highest yielding cultivar at all locations in 1992-94, but the lowest yielding cultivars varied by location and year. At both Icheon and Suweon, "Cayuse", "Magnum" and "Foothill", at Sunghwan, "Cayuse" , "Ensiler" and "Foothill", at Keongsan, "Magnum", "Cayuse" and "Swan", and at Kwangju, "Cayuse", "Magnum" and "Cayuse", were the lowest yielding cultivars in 1993, 1994 and 1995, respectively. At all locations in 1992-94, "West" and "Swan" were the most advanced in growth stage, but "Cayuse", "Foothill", "Magnum" and "Ensiler" were the latest developing cultivars among the oats. Differences among the oat cultivars for the three-year mean NDF, ADF and IVDMD were small and inconsistent, but forage quality of the oats was generally lowest in the early developing cultivars and highest in the late developing cultivars. The govemment recommended oat cultivars tested were generally well adapted across the country, however, in forage production situations in the fall where high yield is more important, early maturing oat cultivars might be preferable to late cultivars because they have higher forage yield earlier in the fall.ction situations in the fall where high yield is more important, early maturing oat cultivars might be preferable to late cultivars because they have higher forage yield earlier in the fall.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.70-79
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• 2016

This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.2
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• pp.145-151
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• 2004

This paper presents a fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diodes and tuning rage is 5.01∼5.30 GHz with 0∼3 V control voltage. For improved phase noise performance, a LC filtering technique is adapted. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is excellent performance. Moreover phase noise is improved by 5 dB after employing the LC filter. It is the first experimental result in field of InGaP/GaAs HBT VCOs. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.25-30
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• 2020

Oxide (SiO₂)/Metal(Ag)/Oxide(SiO₂, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO₂ (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10^-3 Ω^-1.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.448-454
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• 2007

In this paper, the game theory based power control for CDMA system is studied, which has attained intensive interest as a core artificial intelligent technology fur cognitive Radio and its efficiency is evaluated using performance metrics such as system throughput and fairness. Utility Function for joint user centric and network centric power control is defined and simulation results show that game theory based power control is far better than closed loop power control. The contribution of this raper is to formalize the game theory based power control toward the cognitive radio that recognizes and adapts to the radio communication environments.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.198-200
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• 2014

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.321-323
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• 2013

100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• The Journal of the Acoustical Society of Korea
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• v.20 no.2E
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• pp.30-45
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• 2001

This study considers the environmental factors affecting propagation loss and sonar performance in the continental regions of the East Coast Sea of Korea. Water mass distributions appear to change dramatically in a few weeks. Simple calculation with the case when the NKCW (North Korean Cold Water) develops shows that the difference in propagation loss may reach in the worst up to 10dB over range 5km. Another factor, an eddy, has typical dimensions of 100-200km in diameter and 150-200m in thickness. Employing a typical eddy and assuming frequency to be 100Hz, its effects on propagation loss appear to make lower the normal formation of convergence zones with which sonars are possible to detect long-range targets. The change of convergence zones may result in 10dB difference in received signals in a given depth. Thermal fronts also appear to be critical restrictions to operating sonars in shallow waters. Assuming frequency to be 200Hz, thermal fronts can make 10dB difference in propagation loss between with and without them over range 20km. An observation made in one site in the East Coast Sea of Korea reveals that internal waves may appear in near-inertial period and their spectra may exist in periods 2-17min. A simulation employing simple internal wave packets gives that they break convergence zones on the bottom, causing the performance degradation of FOM as much as 4dB in frequency 1kHz. An acoustic experiment, using fixed source and receiver at the same site, shows that the received signals fluctuate tremendously with time reaching up to 6.5dB in frequencies 1kHz or less. Ambient noises give negative effects directly on sonar performance. Measurements at some sites in the East Coast Sea of Korea suggest that the noise levels greatly fluctuate with time, for example noon and early morning, mainly due to ship traffics. The average difference in a day may reach 10dB in frequency 200Hz. Another experiment using an array of hydrophones gives that the spectrum levels of ambient noises are highly directional, their difference being as large as 10dB with vertical or horizontal angles. This fact strongly implies that we should obtain in-situ information of noise levels to estimate reasonable sonar performance. As one of non-stationary noise sources, an eel may give serious problems to sonar operation on or under the sea bottoms. Observed eel noises in a pier of water depth 14m appear to have duration time of about 0.4 seconds and frequency ranges of 0.2-2.8kHz. The 'song'of an eel increases ambient noise levels to average 2.16dB in the frequencies concerned, being large enough to degrade detection performance of the sonars on or below sediments. An experiment using hydrophones in water and sediment gives that sensitivity drops of 3-4dB are expected for the hydrophones laid in sediment at frequencies of 0.5-1.5kHz. The SNR difference between in water and in sediment, however, shows large fluctuations rather than stable patterns with the source-receiver ranges.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.750-755
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• 2003

This paper proposes a new three-line balun. The equivalent circuit of the proposed three-line balun is presented, and impedance matrix［Z］of the equivalent circuit is derived from the relationship between the current and voltage at each port. The design equation for a given set of balun impedance at input and output ports is presented using［S］parameters, which is transferred fom impedance matrix,［Z］. To demonstrate the feasibility and validity of design equation, multi-layer ceramic(MLC) chip balun operated in the 2.4 GHz ISM band frequency is designed and fabricated by the use of the low temperature co-fired ceramic(LTCC) technology. By employing both the proposed new three-line balun equivalent circuit and multi-layer configuration provided by LTCC technology, the 2012 size MLC balun is realized. Measured results of the multi-layer LTCC three-line balun match well with the full-wave electromagnetic simulation results, and measured in band-phase and amplitude balances over a wide bandwidth are excellent. This proposed balun is very easily applicable to multi-layer structure using LTCC as shown in the paper, and also can be realized with microstrip lines on PCB. This distinctive performance is very favorable for wireless communication systems such as wireless LAN(Local Area Network) and Bluetooth applications.