• 전자공학회논문지 IE
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• 제44권2호
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• pp.14-20
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• 2007

본 논문에서는 개선된 성능을 갖는 4치 D-플립플롭을 제안하였다. 제안된 4치 D 플립플롭은 뉴런모스를 기반으로 바이어스 인버터, 온도계 코드 출력회로, EX-OR 게이트, 전달 게이트를 이용하여 4치 항등 논리회로(Identity logic circuit)를 구성하고, 이를 2진의 RS 래치 회로와 결합하여 설계하였다. 설계된 회로들은 3.3V 단일 공급 전원에서 $0.35{\mu}m$ 1-poly 6-metal COMS 공정 파라미터 표준조건에서 HSPICE를 사용하여 모의실험 하였다. 모의실험 결과, 본 논문에서 제안된 4치 D 플립플롭은 100MHz 전후까지의 빠른 동작속도로 측정되었으며 PDP(Power dissipation-delay time product)와 FOM(Figure of merit)은 각각 59.3pJ과 33.7로 평가되어졌다.

• 분석과학
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• 제5권4호
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• pp.381-387
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• 1992

액체섬광계수법을 방사성탄소 연대측정에 이용하기 위하여 섬광용액과 섬광용액 대 벤젠의 부피비, 그리고 베타선 스펙트럼 측정범위를 변화시키면서 삼중수소의 영향을 최소화하고 최대 FOM을 얻기 위한 저준위 액체섬광계수기의 최적계측조건을 결정하였다. 결정된 조건하에서 백그라운드 계수율을 $2.26{\pm}0.03cpm$ 까지 낮출 수 있었으며, 이때의 최대 측정가능 연대는 약 40,000년에 이르렀다. 또한 고개시료 및 토탄시료 등의 실제시료에 적용하여 측정계의 실용성을 확인하였다.

• Current Optics and Photonics
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• 제4권2호
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• pp.134-140
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• 2020

A significant enhancement of the magneto-optical Faraday rotation and extraordinary optical transmission (EOT) in the cascaded double-fishnet (CDF) structure with periodic rectangular apertures is theoretically predicted by using the extended finite difference time domain (FDTD) method. The results demonstrate that the transmittance spectrum of the CDF structure has two EOT resonant peaks in a broad spectrum spanning visible to near-infrared wavebands, one of them coinciding with the enhanced Faraday rotation and large figure of merit (FOM) at the same wavelength. It is most important that the resonant position and intensity of the transmittance, Faraday rotation and FOM can be simply tailored by adjusting the incident wavelength, the thickness of the magnetic layer, and the offset between two metallic rectangular apertures, etc. Furthermore, the intrinsic physical mechanism of the resonance characteristics of the transmittance and Faraday rotation is thoroughly studied by investigating the electromagnetic field distributions at the location of resonance. It is shown that the transmittance resonance is mainly determined by different hybrid modes of surface plasmons (SPs) and plasmonic electromagnetically induced transparency (EIT) behavior, and the enhancement of Faraday rotation is mostly governed by the plasmonic electromagnetically induced absorption (EIA) behavior and the conversion of the transverse magnetic (TM) mode and transverse electric (TE) mode in the magnetic dielectric layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.794-797
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• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

• 전력전자학회논문지
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• 제20권6호
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• 한국전자파학회논문지
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• 제15권1호
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• pp.68-72
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• 2004

InGaP/GaAs HBT공정을 이용하여 1.75 ㎓의 전압제어 발진기를 설계한다. 전압제어 발진기의 위상 잡음을 개선하기 위하여 저역 통과 필터의 특성을 가지는 새로운 잡음 제거 회로를 제안하고, 극 소형화를 위하여 FR-4 기판의 특수한 적층 구조를 이용한다. 제작된 전압제어 발진기의 주파수 변화 범위는 약 200 MHz이고, 위상 잡음은 120 KHz 옵？에서 -119.3 ㏈c/Hz이다. VCO 코어의 소비 전력은 공급 전원 2.8 V에서 11.2 ㎽이고, 출력 파워는 -2 ㏈m이다. FOM의 계산치는 191.7로써, 지금까지 발표된 FET나 HBT 전압제어 발진기보다 좋은 성능을 보인다. 완성된 전압제어 발진기의 크기는 3.266 mm ${\times}$ 3.186 mm로 극소형이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• 대한방사선기술학회지:방사선기술과학
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• 제42권4호
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• pp.279-284
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• 2019

The purpose of this study was to find the best protocol for balance of image quality and dose in brain CT scan. Images were acquired using dual-source CT and AAPM water phantom, noise and dose were measured, and effective dose was calculated using computer simulation program ALARA(S/W). In order to determine the ratio of image quality and dose by each protocol, FOM (figure of merits) equation with normalized DLP was presented and the result was calculated. judged that the ratio of image quality and dose was excellent when the FOM maximized. Experimental results showed that protocol No. 21(120 kVp, 10 mm, 1.5 pitch) was the best, the organ with the highest effective dose was the brain(33.61 mGy). Among organs with high radiosensitivity, the thyroid gland was 0.78 mGy and breast 0.05 mGy. In conclusion, the optimal parameters and the organ dose in the protocol were also presented from the experiment, It may be helpful to clinicians who want to know the protocol about the optimum state of image quality and dose.

• Nuclear Engineering and Technology
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• 제52권12호
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• pp.2821-2835
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• 2020

The phenomenon identification and ranking table (PIRT) is an important basis in the nuclear power plant (NPP) thermal-hydraulic analysis. This study focuses on the importance ranking of the input parameters when lacking the PIRT, and the target scenario is the small break loss of coolant accident (SBLOCA) in a pressurized water reactor (PWR) CPR1000. A total of 54 input parameters which might have influence on the figure of merit (FOM) were identified, and the sensitivity measure of each input on the FOM was calculated through an optimized moment-independent global sensitivity analysis method. The importance ranking orders of the parameters were transformed into the Savage scores, and the parameters were categorized based on the Savage scores. A parameter importance ranking table for the SBLOCA scenario of the CPR1000 reactor was obtained, and the influences of some important parameters at different break sizes and different accident stages were analyzed.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.37-43
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• 2022

In this study, we investigated the optical, electrical and exothermic characteristics of ITO/Ag/ITO multilayer structures prepared with various Ag thicknesses on quartz and PI substrates. The transparent conducting properties of the ITO/Ag/ITO multilayer films depended on the thickness of the mid-layer metal film. The ITO/Ag (14 nm)/ITO showed the highest Haccke's figure of merit (FOM) of approximately 19.3×10^-3 Ω^-1. In addition, the exothermic property depended on the substrate. For an applied voltage of 3.7 V, the ITO/Ag (14 nm)/ITO multilayers on quartz and PI substrates were heated up to 110℃ and 200℃, respectively. The bending tests demonstrated a comparable flexibility of the ITO/Ag/IT multilayer to other transparent electrodes, indicating the potential of ITO/Ag/ITO multilayer as a flexible transparent conducting heater.