• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2008년도 제34회 동계학술대회 초록집
• /
• pp.358-358
• /
• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.471-472
• /
• 2008

The properties of Al doped ZnO (AZO) thin flim for solar cells with various input currents were studied in this paper. Using facing target sputtering with 2wt.% AZO targets, TCO films were deposited on glass(corning 2948) substrate at room temperature. AZO thin films were deposited by 0.2A, 0.4A, 0.6A and 0.8A at the thickness of 300nm. Electrical, optical and structural of thin films investigated by a Hall effect measurement (Ecopia), an UV-VIS spectrometer(HP) and a X-ray diffractometer (Rigaku). As a results, all thin films showed transmittance about 80%, respectively and resistivity was $7.67\times10^{-4}\Omega$-cm at 0.6A.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 한국정밀공학회 2007년도 추계학술대회 논문집
• /
• pp.327-328
• /
• 2007

• Proceedings of the Materials Research Society of Korea Conference
• /
• 한국재료학회 2011년도 춘계학술발표대회
• /
• pp.237.2-237.2
• /
• 2011

SAW-ED를 이용하는 박막공정 기술을 통하여 나노레벨의 SWCNT 와 PEDOT의 thin film 및 hybrid화된 film구조를 얻을 수 있었다. SWCNT와 전도성고분자와의 hybridization을 통해 균일상의 표면 morphology를 갖는 고전도성 투명 필름을 제작하고, 이들의 전기광학적 성질을 확인하였다. SAW-ED를 이용하는 박막공정 기술은 나노입자 및 나노구조물의 박막화 패턴화를 포함하는 새로운 deposition 기술로서의 응용성을 가지고 있으며, 본 연구에서는 SWCNT와 전도성고분자를 이용하여 이를 확인하였다.

• Proceedings of the Korean Society for Bio-Environment Control Conference
• /
• 한국생물환경조절학회 1997년도 가을 심포지움 및 학술논문발표요지
• /
• pp.8-13
• /
• 1997

온실내 재배면적을 최대한 확보하기위해서 2단으로 베드를 설치할 경우 하단부의 생육환경은 상단부와 많은 차이를 보일 것으로 예상된다. 특히 광환경은 매우 열악할 것으로 예상되지만, 호음성식물(Shade plant)의 경우 광포화점이(400$\mu$mol$^{-l}$ m$^{-2}$ ) 비교적 낮기 때문에 재배가 가능할 것으로 판단된다. (중략)

• Journal of the Korean Vacuum Society
• /
• 제4권3호
• /
• pp.287-292
• /
• 1995

단결정 실리콘에 P,B,As 등의 dopant를 이온주입시켰을 때 상부에 스퍼터된 Ti과 고상반응에 의해 형성된 Ti 실리사이드막에 발생되는 blister 현상에 대해 조사했다. Dopant에 관계없이 dose양이 많을수록 Ti 실리사이드막에서 blister의 크기와 밀도가 증가한다. 실리콘 표면에 dopant를 주입한 후 열처리를 하여 damage를 줄여줌으로써 blister의 양을 줄일수 있었다. 이 때 열처리온도가 높을수록 blister의 수가 감소한다.

• The KSFM Journal of Fluid Machinery
• /
• 제15권4호
• /
• pp.33-41
• /
• 2012

In the present work, a parametric study on double-jet film-cooling has been carried out to enhance the film-cooling effectiveness using three-dimensional Reynolds-averaged Navier-Stokes analysis. The shear stress transport turbulence model is used as the turbulence closure. The lateral ejection angles and the lateral and streamwise distance between the centers of the cooling holes are chosen as the geometric parameters. The spatially averaged film-cooling effectiveness averaged over an area of 8 hole diameters in width and 30 hole diameters in streamwise length is used to evaluate the performance of film-cooling. The parameter of the lateral distance has the largest impact on the film cooling effectiveness compared to the others. On the other hand, the parameter of streamwise distance gives the least influence on the film cooling effectiveness.

• Tribology and Lubricants
• /
• 제3권1호
• /
• pp.26-30
• /
• 1987

The effects of high viscosity polybutene lubricant on the asperity contacts between a flat washer and a ball were tested using three balls/two flat washers rotational apparatus. The asperity contacts were dependent on the ratio of EHD flim thickness (h) and surface roughness($\sigma$). The viscosity-pressure coefficient of lubricant gave a significant effect on the film thickness and thereby on h/$\sigma$ ratio.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.445-448
• /
• 2006

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

• Proceedings of the KIEE Conference
• /
• 대한전기학회 1989년도 하계종합학술대회 논문집
• /
• pp.377-379
• /
• 1989

Very thin gate oxide(100-300A) MOS capacitor has been fabricated. The effect of series resistance must be calculated and the exact metal-semiconductor work function difference should be obtained to get the fixed oxide charge density exisiting in oxide. Dilute oxidation make sagy to control oxide thickness and reduce fixed oxide charge density. In case of dilute oxidation, fixed oxide charge density depends on oxidation time. If oxide is very thin, the annealing effect is ignored.