• Applied Microscopy
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• v.45 no.4
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• pp.189-194
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• 2015

Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$).

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.262-269
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• 2013

Though focused ion beam (FIB) is one of the candidates to fabricate the nanoscale patterns, precision milling of nanoscale structures is not straightforward. Thus this poses challenges for novice FIB users. Optimal determination in FIB parameters is a crucial step to fabricate a desired nanoscale pattern. There are two main FIB parameters to consider, beam current (beam size) and dose (beam duration) for optimizing the milling condition. After fixing the dose, the proper beam current can be chosen considering both total milling time and resolution of the pattern. Then, using the chosen beam current, the metal nano hole structure can be perforated to the required depth by varying the dose. In this experiment, we found the adequate condition of $0.1nC/{\mu}m^2$ dose at 1 pA Ga ion beam current for 100 nm thickness perforation. With this condition, we perforated the periodic square array of elliptical nano holes.

• 한국전자현미경학회:학술대회논문집
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• 2002.05a
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• pp.63-66
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• 2002

• Korean Journal of Mineralogy and Petrology
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• v.33 no.4
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• pp.419-426
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• 2020

Understanding the pore structure including pore shape and connectivity in unconventional reservoirs is essential to increase the recovery rate of unconventional energy resources such as shale gas and oil. In this study, we found analysis condition to probe the nanoscale pore structure in shale reservoirs using Focused Ion Beam (FIB) and Ion Milling System (IMS). A-068 core samples from Liard Basin are used to probe the pore structure in shale reservoirs. The pore structure is analyzed with different pretreatment methods and analysis condition because each sample has different characteristics. The results show that surface milling by FIB is effective to obtain pore images of several micrometers local area while milling a large-area by IMS is efficient to observe various pore structure in a short time. Especially, it was confirmed that the pore structure of rocks with high content of carbonate minerals and high strength can be observed with milling by IMS. In this study, the analysis condition and process for observing the pore structure in the shale reservoirs is established. Further studies are needed to perform for probing the effect of pore size and shape on the enhancement of shale gas recovery.

• Applied Microscopy
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• v.40 no.4
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• pp.177-183
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• 2010

A focused ion beam (FIB) system produces a beam of positive ions (usually gallium) which are heavier than electrons and can be focused by electrostatic lenses into a spot on the specimen. With its ability milling of the specimen material by 10 to 100 nm with each pass of the beam, FIB is widely adopted in materials science, semiconductor industry, and ceramics research. Recently, FIB has been increasingly employed in the field of biomedical sciences. Here we provide a brief introduction to FIB and its applications for a wide variety of biomedical research. The surface of specimen can be in situ processed and quasi-real time visualized by two beam combination of FIB and field emission scanning electron microscope (FESEM). Due to its milling process, internal structures can be exposed and analyzed: yeast cells, fungus-inoculated wheat leaf, mannitol particles in inhalation aerosols, and oyster shell. Serial blockface tomography with the system kindles 3-dimensional reconstruction researches in the realm of nervous system and life sciences. Two-beam system of FIB/FESEM is a versatile tool to be utilized in the biomedical sciences, especially in 3-dimensional reconstruction studies.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1531-1534
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• 2005

Nano pattern is being utilized to produce micro optical components, sensors, and information storage devices. In this study, a study on nano pattern fabrication using raster-scan type Focused Ion Beam (FIB) milling is introduced. Because the intensity of ion beam has Gaussian distribution, the overlapping of the Gaussian beam results in a 3D pattern, and the shape of the pattern can be adjusted by variation of FIB milling parameters, such as overlap, ion dose, and dwell time. The Gaussian shape of single beam intensity has been investigated by experiment, and 3D nano patterns with pitch of 200nm generated by FIB is demonstrated.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

• Transactions of Materials Processing
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• v.16 no.4 s.94
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• pp.323-328
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• 2007

The residual stress in axial direction of the steel wires has been measured by using a method based on the combination of the focused ion beam(FIB) milling and digital image correlation(DIC) program. The residual stress is calculated from the measured displacement field before and after the introduction of a slot along the steel wires. The displacement is obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot is introduced by FIB milling with low energy beam. The experimental procedures are described and the feasibilities are demonstrated in steel wires fabricated with different conditions. It reveals that the tensile residual stress is formed in all steel wires and this is strongly influenced by the fabrication conditions.

• Applied Microscopy
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• v.45 no.4
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.322-325
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• 2005

The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.