• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.593-597
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• 2005

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\phi}$ 10nm and smaller is available. Currently FIB is not being applied in the fabrication of this micro part because of some problems to redeposition and charging effect of the substrate causing reduction of accuracy with regards to shape and productivity. Furthermore, the prediction of the material removal rate information should be required but it has been insufficient for micro part fabrication. The paper have the targets that are FIB-CVD characteristic analysis and minimum line pattern resolution achievement fur 3D micro fabrication. We make conclusions with the analysis of the results of the experiment according to beam current, pattern size and scanning parameters. CVD of 8 pico ampere shows superior CVD yield but CVD of 1318 pico ampere shows the pattern sputtered. And dwell time is dominant parameter relating to CVD yield.

• 한국정밀공학회지
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• 제23권3호
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• pp.56-60
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• 2006

A high-resolution shadow mask, or called a nanostencil was fabricated for high resolution lithography. This high-resolution shadowmask was fabricated by a combination or MEMS processes and focused ion beam (FIB) milling. 500 nm thick and $2{\times}2mm$ large membranes wore made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane. By local deposition through the apertures of nanostencil, nanoscale patterns down to 70 nm could be achieved.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.871-874
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• 2004

Fabrication of a high-resolution shadow mask, or called nanostencil, is presented. This high-resolution shadowmask is fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. 500 nm thick and 2x2 mm large membranes are made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. Subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to high resolution of FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.489-490
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• 2006

To establish fabrication techniques for nano structure understanding of focused ion beam (FIB) milling process is required. In this study the mathematical model containing the factors related to FIB milling is developed to acquire the optimal fabrication condition. Then, the model is verified by comparison with various nano pattern fabricated in actual FIB system. Consequently, it is demonstrated that the nano patterns with the smallest pitch can be fabricated using developed FIB milling model.

• 한국공작기계학회논문집
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• 제16권5호
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• pp.129-133
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• 2007

Focused Ion Beam(FIB) systems is a useful tool for the fabrication of micro-nano scale structures. In this study, the effects of FIB etching on the Au microstructure are systematically investigated. As the fabrication parameters, ion dose, dwell time and beam overlap ratio are studied. First, the increases of Ga ion dose makes the milling yield higher and the sidewall of milling profile steeper. Dwell time is found to have little effects on the milling profile due to the relatively large milling area of $1\times1{\mu}m^2$ used in this study. However, beam overlap significantly affects not only milling rate but also milling profile. As the beam overlap ratio changes from positive to negative, the development of regular cross-stripe patterns at the bottom with low milling rate is observed.

• Applied Microscopy
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• 제45권4호
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 춘계학술대회 논문집
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• pp.241-245
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• 2007

The residual stress in axial stress in the axial direction of the steel filaments has been measured by using a method based on the combination of the focused ion beam (FIB) and high resolution strain mapping program (VIC-2D). That is, the residual stress was calculated from the measured displacement field before and after the introduction of a slot along the steel filaments. The displacement was obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot was introduced by FIB milling with low energy beam. The present measurement revealed that the residual stress within 8% of the magnitude was persistent in the steel filaments fabricated.

• Applied Microscopy
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• 제50권
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• pp.22.1-22.6
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• 2020

In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). However, the FIB-milled thin-foil specimens are inevitably contaminated with Ga⁺ ions. When these specimens are heated for real time observation, the Ga⁺ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue by Ar⁺ ion milling within FIB system was explored in this study. However, the Ga residue remained in the thin-foil specimen that was extracted by EXLO from the trench after the conduct of Ar⁺ ion milling. To address this drawback, the thin-foil specimen was attached to an FIB lift-out grid, subjected to Ar⁺ ion milling, and subsequently transferred to an MEMS-based chip by EXLO. The removal of the Ga residue was confirmed by energy dispersive spectroscopy.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.472-477
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• 2004

Miniaturization is the central theme in modern fabrication technology. Many of the components used in modem products are becoming smaller and smaller. The direct write FIB technology has several advantages over contemporary micromachining technology, including better feature resolution with low lateral scattering and capability of mastless fabrication. Therefore, the application of focused ion beam(FIB) technology in micro fabrication has become increasingly popular. In recent model of FIB, however the feeding system has been a very coarse resolution of about a few ${\mu}{\textrm}{m}$. It is not unsuitable to the sputtering and the deposition to make the high-precision structure in micro or macro scale. Our research is the development of nano stage of 200mm strokes and l0nm resolutions. Also, this stage should be effectively operating in ultra high vacuum of about 1$\times$10$^{-5}$ pa. This paper presents the concept of nano stages and the discussion of the material treatment for ultra tush vacuum.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1518-1521
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• 2005

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries This paper focus to apply the sputtering technology accumulated by experiments to 3d structure fabrication with high resolution. Therefore some verifications and discussions of the characteristics of FIB sputtering results according to focal length were described in this paper. And we suggested the definition of rectangular pattern profile and made the verifications of sputtering results based on definition of it.