• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.458-463
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• 2019

Palladium (Pd) is widely used as a catalyst and noxious gas sensing materials. Especially, various researches of Pd based hydrogen gas sensor have been studied due to the noble property, Pd can be adsorbed hydrogen up to 900 times its own volume. In this study, palladium oxide (PdO) nanostructures were grown on Si substrate ($SiO_2(300nm)/Si$) for 3 to 5 hours at $230^{\circ}C{\sim}440^{\circ}C$ using thermal chemical vapor deposition system. Pd powder (source material) was vaporized at $950^{\circ}C$ and high purity Ar gas (carrier gas) was flown with the 200 sccm. The surface morphology of as-grown PdO nanostructures were characterized by field-emission scanning electron microscopy(FE-SEM). The crystallographic properties were confirmed by Raman spectroscopy. As the results, the as-grown nanostructures exhibit PdO phase. The nano-cube structures of PdO were synthesized at specific substrate temperatures and specific growth duration. Especially, PdO nano-cube structrures were uniformly grown at $370^{\circ}C$ for growth duration of 5 hours. The PdO nano-cube structures are attributed to vapor-liquid-solid process. The nano-cube structures of PdO on graphene nanosheet can be applied to fabricate of high sensitivity hydrogen gas sensor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.5
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• pp.81-86
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• 2019

Metal oxide/graphene composites have been known as promising functional materials for advanced applications such as high sensitivity gas sensor, and high capacitive secondary battery. In this study, tin dioxide ($SnO_2$) nanostructures were grown on chemically synthesized graphene nanosheets using a two-zone horizontal furnace system. The large area graphene nanosheets were synthesized on Cu foil by thermal chemical vapor deposition system with the methane and hydrogen gas. Chemically synthesized graphene nanosheets were transferred on cleaned $SiO_2$(300 nm)/Si substrate using the PMMA. The $SnO_2$ nanostuctures were grown on graphene nanosheets at $424^{\circ}C$ under 3.1 Torr for 3 hours. Raman spectroscopy was used to estimate the quality of as-synthesized graphene nanosheets and to confirm the phase of as-grown $SnO_2$ nanostructures. The surface morphology of as-grown $SnO_2$ nanostructures on graphene nanosheets was characterized by field-emission scanning electron microscopy (FE-SEM). As the results, the synthesized graphene nanosheets are bi-layers graphene nanosheets, and as-grown tin oxide nanostructures exhibit tin dioxide phase. The morphology of $SnO_2$ nanostructures on graphene nanosheets exhibits complex nanostructures, whereas the surface morphology of $SnO_2$ nanostructures on $SiO_2$(300 nm)/Si substrate exhibits simply nano-dots. The complex nanostructures of $SnO_2$ on graphene nanosheets are attributed to functional groups on graphene surface.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.4
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• pp.419-426
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• 2020

Understanding the pore structure including pore shape and connectivity in unconventional reservoirs is essential to increase the recovery rate of unconventional energy resources such as shale gas and oil. In this study, we found analysis condition to probe the nanoscale pore structure in shale reservoirs using Focused Ion Beam (FIB) and Ion Milling System (IMS). A-068 core samples from Liard Basin are used to probe the pore structure in shale reservoirs. The pore structure is analyzed with different pretreatment methods and analysis condition because each sample has different characteristics. The results show that surface milling by FIB is effective to obtain pore images of several micrometers local area while milling a large-area by IMS is efficient to observe various pore structure in a short time. Especially, it was confirmed that the pore structure of rocks with high content of carbonate minerals and high strength can be observed with milling by IMS. In this study, the analysis condition and process for observing the pore structure in the shale reservoirs is established. Further studies are needed to perform for probing the effect of pore size and shape on the enhancement of shale gas recovery.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.138-143
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• 2011

To investigate the electromagnetic interference shielding efficiency (EMI SE) property based on heat treatment effects of carbon fibers in various temperatures, the polyacrilonitrle-based carbon fibers were prepared by electrospinning method and treated at 1073, 1323, 1873 and 2573 K. The surface morphology of carbon fibers was investigated by using FE-SEM and the carbon crystallization was studied by Raman spectroscopy based on effects of reaction temperatures. The electrical conductivity was obtained by measuring the surface resistance with four probe method on carbon crystallization. The permittivity, permeability and EMI SE were investigated by using S-parameter in the range of 800~4500 MHz. In case of carbon fibers treated at 2573 K, the improved carbon crystallization was confirmed by Raman spectrum and the enhanced electrical conductivity showing 54.7 S/cm was also observed. The permittivity was dramatically improved by factor of 4 based on effect of high reaction temperature. Eventually, the highly improved EMI SE value was obtained showing around 41.7 dB.

• Korean Journal of Metals and Materials
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• v.47 no.2
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• pp.129-137
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• 2009

Corrosion behaviors of TiN coated dental casting alloys have been researched by using various electrochemical methods. Three casting alloys (Alloy 1: 63Co-27Cr-5.5Mo, Alloy 2: 63Ni-16Cr-5Mo, Alloy 3: 63Co-30Cr-5Mo) were prepared for fabricating partial denture frameworks with various casting methods; centrifugal casting(CF), high frequency induction casting(HFI) and vacuum pressure casting(VP). The specimens were coated with TiN film by RF-magnetron sputtering method. The corrosion behaviors were investigated using potentiostat (EG&G Co, 263A. USA) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion morphologies were analyzed using FE-SEM and EDX. Alloy 1 and Alloy 2 showed the ${\alpha}-Co$ and ${\varepsilon}-Co$ phase on the matrix, and it was disappeared in case of TiN coated Alloy 1 and 2. In the Alloy 3, $Ni_2Cr$ second phases were appeared at matrix. Corrosion potentials of TiN coated alloy were higher than that of non-coated alloy, but current density at passive region of TiN coated alloy was lower than that of non-coated alloy. Pitting corrosion resistances were increased in the order of centrifugal casting, high frequency induction casting and vacuum pressure casting method from cyclic potentiodynamic polarization test.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of Environmental Health Sciences
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• v.47 no.6
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• pp.540-547
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• 2021

Background: Indoor air pollutants are caused by a number of factors, such as coming in from the outside or being generated by internal activities. Typical indoor air pollutants include nitrogen dioxide and carbon monoxide from household items such as heating appliances and volatile organic compounds from building materials. In addition there is carbon dioxide from human breathing and bacteria from speaking, coughing, and sneezing. Objectives: According to recent research results, most indoor air pollution is known to be greatly affected by internal factors such as burning (biomass for cooking) and various pollutants. These pollutants can have a fatal effect on the human body due to a lack of ventilation facilities. Methods: We fabricated a polydopamine (PDA) layer with Ti substrates as a coating on supported glass fiber fabric to enhance its photo-activity. The PDA layer with TiO₂ was covalently attached to glass fiber fabric using the drop-casting method. The roughness and functional groups of the surface of the Ti substrate/PDA coated glass fiber fabric were verified through infrared imaging microscopy and field emission scanning electron microscopy (FE-SEM). The obtained hybrid Ti substrate/PDA coated glass fiber fabric was investigated for photocatalytic activity by the removal of ammonia and an epidermal Staphylococcus aureus reduction test with lamp (250 nm, 405 nm wavelength) at 24℃. Results: Antibacterial properties were found to reduce epidermal staphylococcus aureus in the Ti substrate/PDA coated glass fiber fabric under 405 nm after three hours. In addition, the Ti substrate/PDA coated glass fiber fabric of VOC reduction rate for ammonia was 50% under 405 nm after 30 min. Conclusions: An electron-hole pair due to photoexcitation is generated in the PDA layer and transferred to the conduction band of TiO₂. This generates a superoxide radical that degrades ammonia and removes epidermal Staphylococcus aureus.

• Journal of Conservation Science
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• v.38 no.2
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• pp.124-132
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• 2022

Through scientific analysis, this study identified the material characteristics of metal foil decorating the border line and knotting of the National Folklore Cultural Heritage 'Pouch for the Sutra Embroidered with a Sun and Moon Design'. Through Scanning Electron Microscope-Energy Dispersive Spectroscopy results, it was estimated that silver (Ag) and sulfur (S) were present in the metal foil, and silver leaf was also attached to the medium. S may discolor Ag from yellow to black depending on its concsentration and contact time. Yellow color could not be identified in metal foil at present. But there existed an example of the preparation of a gold-colored flat silver thread; therefore, further research is needed to estimate the original color. The lamella was reddish brown on the back. Aluminum, silicon, and iron were also detected and were the main components found in red soil. This is believed to be the red adhesive in traditional flat gold thread and is considered to be an adhesive-related component of the metal foil. From the gas chromatography mass spectrometry results, the adhesive component was confirmed to be animal glue.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.153-157
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• 2023

In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we mixed AlF₃ powder with the solid-state reacted yttrium oxyfluoride (YOF) in order to increase plasma-etching resistance of the plasma spray coated YOF layer. Effects of the mixing ratio of AlF₃ with YOF powder on crystal structure, microstructure and chemical composition were investigated using XRD and FE-SEM. The plasma-etching ratios of the plasma-spray coated layers were calculated and correlation with AlF₃ mixing ratio was analyzed.