• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2245-2250
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• 2014

A new accepter unit, 6,7-difluoro-2,3-dihexylquinoxaline, was prepared and utilized for the synthesis of the conjugated polymers containing electron donor-acceptor pair for OPVs. New series of copolymers with dioctyloxybenzodithiophene as the electron rich unit and 6,7-difluoro-2,3-dihexylquinoxaline as the electron deficient unit are synthesized. The solid films of poly[2,6-(4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b']dithiophene)-alt-5,8-(6,7-difluoro-2,3-dihexylquinoxaline)] (PBQxF) and poly[2,6-(4,8-bis(2-ethylhexyloxy) benzo[1,2-b:4,5-b']dithiophene)-alt-5,8-(6,7-difluoro-2,3-dihexyl-5,8-di(thiophen-2-yl) quinoxaline)] (PBDTQxF) show absorption bands with maximum peaks at about 599 and 551 nm and the absorption onsets at 692 and 713 nm, corresponding to band gaps of 1.79 and 1.74 eV, respectively. The devices comprising PBQxF with $PC_{71}BM$ (1:2) showed open-circuit voltage ($V_{OC}$) of 0.64 V, short-circuit current density ($J_{SC}$) of $1.58mA/cm^2$, and fill factor (FF) of 0.39, giving power conversion efficiency (PCE) of 0.39%. To obtain absorption in the longer wavelength region, thiophene units without any alkyl group are incorporated as one of the monomers in PBDTQxF, which may result in low solubility of the polymers to lead lower efficiency.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.25-30
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• 2000

The relation between the phase-shift profile for the intermediate frequencies and the Langmuir adsorption isotherm at the poly-$Pt/0.1\;M\;H_2SO_4$ aqueous electrolyte interface has been studied using ac impedance measurements, i.e., the phase-shift methods. The suggested interfacial equivalent circuit consists of the serial connection of the electrolyte resistance ($R_S$), the faradaic resistance $(R_F)$ and the equivalent circuit element $(C_P)$ of the adsorption pseudocapacitance $(C_\varphi)$. The delayed phase shift $(\varphi)$ depends on both the cathode potential (E) and frequency (f), and is given by $\varphi=-tan^{-1}[1/2{\pi}f(R_s+R_F)C_p]$. The phase-shift profile $(\varphi\;vs.\;E)$ for the intermediate frequency (ca. 6Hz) can be used as an experimental method to determine the Langmuir adsorption isotherm (9 vs. E). The equilibrium constant (K) for H adsorption and the standard free energy $({\Delta}G_{ads})$ of H adsorption at the poly-$Pt/0.1\;M\;H_2SO_4$ electrolyte interface are $1.8\times10^{-4}\;and\;21.4kJ/mol$, respectively. The H adsorption is attributed to the over-potentially deposited hydrogen (OPD H).

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.767-769
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• 1998

Using the R/V converting circuit, hydrogen detecting characteristics of the $WO_3$ films were investigated. The R/V converting circuit is configured with the equivalently constant current driving method connecting an unknown resistor to be measured in the feedback loop of the or-amr rather than using a separated constant current circuit. The response time of the reference voltage for the R/V converting circuit was simulated by the circuit simulator "SABER", and it was found that the response time in the high resistance range become longer and the error amounts to 10%. From the simulation results. replacing the capacitor in the feedback loop of the second stage or-amp with a 0.001uF capacitor, when measuring in the high resistance range, the response characteristics are remarkably improved. The response time was shortened from about 10 seconds to below 1 second. Using this circuit, the effect of $WO_3$ films deposited by sputtering method on hydrogen was measured.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.658-663
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• 2015

In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrate-and-Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1543-1546
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• 2002

The expandable 4 bit adder/subtracter IC was designed using the adiabatic and dynamic CMOS logic (ADCL) circuit as the ultra-low power consumption basic logic circuit and the IC was fabricated using a standard 1.2 ${\mu}$ CMOS process. As the result the steady operation of 4 bit addition and subtraction has been confirmed even if the frequency of the sinusoidal supply voltage is higher than 10MHz. Additionally, by the simulation, at the frequency of 10MHz, energy consumption per operation is obtained as 93.67pJ (ar addition and as 118.67pJ for subtraction, respectively. Each energy is about 1110 in comparison with the case in which the conventional CMOS logic circuit is used. A simple and low power oscillation circuit is also proposed as the power supply circuit f3r the ADCL circuit. The oscillator operates with a less one volt of DC supply voltage and around one milli-watts power dissipation.

• Proceedings of the KIEE Conference
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• 2003.10b
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• pp.235-238
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• 2003

This paper presents an ZVT(Zero Voltage Transition) Forward Converter using Primary Auxiliary Circuit operation. An auxiliary resonant circuit was added to the basic forward converter, implementing the fVT technique for the main switch. The switch employed by the auxiliary circuit operates under Zero-Current-Switching(ZCS) condition. The complete operating principle, simulation and experimental results are presented

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.109-114
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• 2000

The relation between the phase-shift profile fur the intermediate frequencies and the Langmuir adsorption isotherm at the poly-Ir/0.1 M $H_2SO_4$ aqueous electrolyte interface has been studied using ac impedance measurements, i.e., the phase-shift methods. The simplified interfacial equivalent circuit consists of the serial connection of the electrolyte resistance $(R_s)$, the faradaic resistance $(R_F)$, and the equivalent circuit element $(C_P)$ of the adsorption pseudoca-pacitance $(C_\phi)$. The comparison of the change rates of the $\Delta(-\phi)/{\Delta}E\;and\;\Delta{\theta}/{\Delta}E$ are represented. The delayed phase shift $(\phi)$ depends on both the cathode potential (E) and frequency (f), and is given by $\phi=tan^{-1}[1/2{\pi}f(R_s+R_F)C_P]$. The phase-shift profile $(-\phi\;vs.\;E)$ for the intermediate frequency (ca. 1 Hz) can be used as an experimental method to determine the Langmuir adsorption isotherm $(\theta\;vs.\;E)$. The equilibrium constant (K) for H adsorption and the standard free energy $({\Delta}G_{ads})$ of H adsorption at the poly-Ir/0.1 M $H_2SO_4$ electrolyte interface are $2.0\times10^{-4}$ and 21.1kJ/mol, respectively. The H adsorption is attributed to the over-potentially deposited hydrogen (OPD H).

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.968-970
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• 2001

Recently, the power supply equipments have tendency to take multiple feedback loop paths. In this paper the state space averaging technique is applied for the analysis of flyback type current mode control circuit. We made real converter for the gurantee of stable output characteristic and proper design of feedback circuit. The validity of proposed method is verified from test results. The improvement of stability is confirmed by sinusoidal signal injection method with isolated transformer. It is known that phase margin is sufficient and gain crossover frequency $f_c$ is nearly 1/5 of switching frequency $f_s$, from the experimental result with frequency response analyzer.

• ETRI Journal
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• v.26 no.1
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• pp.61-64
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• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.