• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4247-4252
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• 2011

The porphyrin-incorporated arylether dendrimers ZnP-D1 and ZnP-D4 were investigated to discover the influence of dendritic environments for the axial ligation of pyridine and photoinduced electron transfer by methyl viologen. Absorption and fluorescence spectra of ZnP, ZnP-D1, and ZnP-D4 were measured in dichloromethane with the addition of pyridine or methyl viologen dichloride. Axial ligation of pyridine was confirmed by red-shifted absorption spectrum. The complex formation constants $K_f$ (Table 1) for axial coordination of pyridine on ZnP, ZnP-D1, and ZnP-D4 were estimated to be $4.4{\times}10^3\;M^{-1}$, $3.3{\times}10^3\;M^{-1}$, and $1.7{\times}10^3\;M^{-1}$, respectively. The photoinduced electron transfer to methyl viologen dichloride was confirmed by fluorescence quenching. Stern-Volmer constants Ksv for ZnP, ZnP-D1, and ZnP-D4 were calculated to be $2.6{\times}10^3$, $2.5{\times}10^3$, and $2.1{\times}10^3$, respectively. ZnP-D4 surrounded by 4 aryl ether dendrons shows the smallest $K_f$ and Ksv values, with comparison to ZnP and ZnP-D1.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.616-617
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• 2006

• Journal of KSNVE
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• v.4 no.4
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• pp.443-449
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• 1994

In the analysis of circular cylindrical shell's vibration and sound radiation, there are numerical and analytical methods. Numerical methods such as F.E.M and B.E.M, have the limit of frequency range. Analytical method can be applied to the circular cylindrical shell from low frequency to high frequency. In this paper, we use the analytical method for shell, and numerical method, F.D.M, for fluid. We also use the method using transfer matrix and eigenanalysis of transfer matrix which can therefore calculate the rotational d.o.f that is very imkportant in synthesis with inner structure. Inner structure has much effect on the submerged circular cylindrical shell vibration and sound rediation. Results for the immersed circular cylindrical shell vibration and sound radiation are compared with the analytic solutions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.9-16
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• 2000

MOS transistors are fabricated and evaluated for RF IC applications such as mobile communication systems using 0.35m CMOS process. Characteristics of MOSFETs are analyzed at various channel length, width and bias conditions. From the analysis, cut-off frequency ($f_T$) is independent on channel width but maximum oscillation frequency ($f_{max}$) tends to derease as the channel width increases. As channel length increases, $f_T$ and fmax decrease. $f_T$ is 22GHz and fmax is 28GHz at its maximum value. High frequency noise performance is improved with larger channel width and smaller channel length at same bias conditions. NFmin at 2GHz is 0.45dB as a minimum value. From the evaluation, MOSFETs designed using 0.35m CMOS process demonstrated a full potential for the commercial RF ICs for mobile communication systems near 2GHz. And optimization methods of the CMOS transistors for RF applications are presented in this paper.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.55-61
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• 1999

A soft error rate (SER) simulator for DRAM was developed. In comparison to the other SER simulator using device simulator or Monte Carlo simulator, the proposed simulator substantially reduced the CPU time using an analytical model for the alpha-particle-induced charge collection. By analysing the soft error modes in DRAM, the bit-bar mode was identified as the main cause of soft error. Using the new SER simulator, SER of 256M DRAM was investigated and it was found that the storage capacitance had a 5fF margin.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.249-252
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• 2002

we have studied the characteristics of PHEMT's with gate recess etching method. The DC characterization of PHTMT fabricated with the wide single recess methods is a maximum drain current density of 319.4 ㎃/mm and a peak transconductance of 336.7 ㎳/mm. The RF measurements were obtained in the frequency range of 1~50GHz. At 50GHz, 3.69dB of 521 gain were obtained and a current gain cut-off frequency(f$_{T}$) of 113 CH and a maximum frequency of oscillation(f$_{max}$) of 172 Ghz were achieved from this device. On the other hand, a maximum drain current of 367 mA/mm, a peak transconduclancc of 504.6 mS/mm, S$_{21}$ gain of 2.94 dB, a current gain cut-off frequency(f$_{T}$) of 101 CH and a maximum frequency of oscillation(f$_{max}$) of 113 fa were achieved from the PHEMT's fabricated by the .narrow single recess methods.methods.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.105-111
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• 2004

In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.31 no.1
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• pp.29-44
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• 1995

A model experiment on the pair midwater trawl net applicable to 800 PS class Korean pair bottom trawlers was carried out in the special-prepared experimental thank. the tank was prepared as a reverse trapezoid shape in its vertical section by digging out flat soil. The dimension of the tank showed the 9.6 W$\times$43.0 L(m) of the upper fringe and the 4.8 W$\times$38.0 L(m) of the bottom with 3.0m in depth. The depth of water was maintained 2.7m during experiment. The model net was prepared based on the Tauti's similarity law of fishing gear in 1/30 scale considering the dimension of the experimental tank. Mouth performance of the model net during towing were determined by the photographs taken in front of the net mouth with the combinations of towing velocity, warp length and distance between paired boats. The results obtained can be summarized as follows: 1. Vertical opening of the model nets A and B was varied in the range of 0.18~0.88 m and 0.21~0.78 m (which can be converted into 5.4~26.4m and 6.3~23.4 m in the full-scale net) respectively, and was varied predominantly by towing speed. Vertical opening (H which is appendixed m for the model net. f for the full-scale net. A and B for the types of the model net) can be expressed as the function of towing velocity$V_t$as in the model net $V_t$ : m/ sec)$H_{mA}$=1.67$e^{-1.65V_t}$ $H_{mB}$=1.15$e^{-1.13V_t}$, in the full-scale net ($V_t$ : k't) $H_{fA}$=50.27$e^-0.37V_t$ $H_{fB}$=34.46$e^{-0.26Vt}$. 2. Horizontal opening of the model nets An and b was varied in the range of 1.03~1.54m and 1.04~1.55 m (which can be converted into 30.9~46.2 m and 31.2~46.5m in the full-scale net) respectively, and was varied predominantly by distance between paired boats. Horizontal opening (W, appendixes are as same as the former) an be expressed as the function of distance between paired boats $D_b$as in the model net $W_{mA}$=0.69+0.09$D_b$ $W{mB}$=0.73+0.09$D_b$, in the full-scale net $W_{fA}$=20.81+0.09$D_b$ $W_{fB}$=22.11+0.09$D_b$ 3. Net opening area of the model net A and B was varied in the range of 0.28~1.04 $m^2$ and 0.33~0.94$m^2$(which can be converted into 252~936$m^2$ and 297~846$m^2$ in the full-scale net) respectively, and was varied predominantly by towing velocity. Net opening area ($S$, appendixes are as same as the former) van be expressed as the function of towing velocity$V_t$ as in the model net $v_t$ : m/sec) $S_{Ma}$=2.01$e^{-1.54V_T}$ $S_{mA}$=1.40$e^{-1.65V_t}$, in the full-scale net ($V_t$ : k't) $S_{fA}$=1.807$e^-0.35V_t$ $S_{fA}$=1.265$e^{-0.24V_t}$. 4. Filtering volume of the model nets A and B was varied in the range of 0.32~0.55 $m^3$ and 0.37~0.55$m^3$(which can be converted into 8.640~14.850 $m^3$ and 9.990~14.850$m3$in the full~scale net) respectively, and was predominantly varied by towing speed. filtering volume of the model net-A showed the maximum at the towing speed 0.69 m/sec(3 k't in the full-scale net), compared with that of the model net B showed at 0.92 m/sec(4 k't in the full-scale net).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.7
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• pp.771-777
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• 2008

In this paper, a frequency doubler using modified time-delay technique is proposed. A voltage controlled delay line (VCDL) in the proposed frequency doubler compensates the group delay time mismatching between input and delayed signal. With the group delay time matching and waveform shaping using the adjustable Schmitt triggers, the unwanted fundamental component($f_0$) and the higher order harmonics such as third and fourth are diminished excellently. In result, only the doubled frequency component($2f_0$) appears dominantly at the output port. The frequency doubler is designed at 1.15 GHz of $f_0$ and fabricated with TSMC $0.18\;{\mu}m$ CMOS process. The measured output power at $2f_0$ is 2.67 dBm when the input power is 0 dBm. The obtained suppression ratio of $f_0,\;3f_0$, and $4f_0$ to $2f_0$ are 43.65, 38.65 and 35.59 dB, respectively.