• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.135-138
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• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• Korean journal of applied entomology
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• v.23 no.2 s.59
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• pp.74-81
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• 1984

The experiments were conducted to study the distribution of wilt of strawberry caused by Fusarium in Korea, the characters of the causal fnngus and its control. The results obtained are summarized as follows. 1. Wilt of strawberry has been found in Gimhae and Samrangjin, Gyeongnam province a few years ago. This disease has been spreading year after year, and observed on farms in most of the strawberry-growing areas in Korea. 2. The fungus was isolated frequently from the crowns and petioles of diseased straw berry plants, and the fungus belonging to Fusariun oxysporum in terms of the morphological characteristics of macroconidia, microconidia, chlamydospore and conidiophore on V-8 Agar. 3. The macroconidia formation of the fungus varied remarkably with the Isolates and kinds of medium tested. However. all isolates abundantly produced macroconidia on V-8 Agar. 4. The cross-inoculation tests with several forma specialis of F. oxysporum to cucumber, tomato, watermelon, luffa, cabbage, melon and strawberry were carried out. The isolates from strawberry viz. Kodama's F. oxysporum f. sp. fragariae and S-1 of the authors were pathogenic to only strawberry. The fungus was also similar in morphology and symptoms to Kodama's and Winks' isolate of F. oxysporum f. sp. fragariae. Therefore, the fungus is identified as Fusarium oxysporum Schl. f. sp. fragariae Winks & Williams. 5. The most effective fungicides were Benomyl and Homai for inhibiting sporulation and mycelial growth of the fungus. 6 The cultivar Kurumae 35, Himiko, Senga gigana and Daehak I were resistant, whereas Hokowase, Instiate Z4, Juspa, Puget beauty and Marshall were susceptible to the fungus with artificial inoculation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.21-27
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• 1998

Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.94-101
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• 2023

Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.

• ETRI Journal
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• v.20 no.2
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• pp.241-249
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• 1998

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

• Solar Energy
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• v.6 no.2
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• pp.70-75
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• 1986

The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.

• Speech Sciences
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• v.1
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• pp.55-81
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• 1997

In the present paper, V-to-V coarticulation in Korean VCV sequences is discussed, focusing on links between consonantal production and degree of V-to-V coarticulation. Temporal and spatial differences between three types of Korean alveolar stops (lax /t/. aspirated /$t^h$/ and thense /t'/) are examined from VCV sequences involving all possible combinations of three Korean unrounded vowels /a, i,/ based on spectrographic and electrographic data(two male speakers and one female speaker and one female speaker respectively). Closure duration and voice onset time (VOT) were measured from acoustic data. 'Total duration', which is defined as the sum of the closure duration and the VOT, was also calculated in order to see the temporal distance between two vowels in a VCV sequence. Differences in lingual-palatal contact pattern at the maximum contact (MC) point between the three types of stop were observed from EPG data. V-to-V coarticulation was investigated by measuring the offset or onset of the second formant (F2) of the target vowels from spectrograms. Two different dimensions of articulation, temporal and spatial, seem to playa role in determining the degree of V-to-V coarticulation. The degree of V-to-V anticipatory coarticulation is influenced by the spatial characteristics of the intervening consonant while the degree of carryover coarticulation is influenced by the temporal characteristics of the consonant.

• 전자공학회논문지 IE
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• v.43 no.4
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• pp.1-7
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• 2006

In this paper, two types of blue organic light-emitting device were designed. We have analyzed the characteristics of Type I device without a hole blocking layer, and analyzed the characteristics of Type II device using a hole blocking layer of BCP or BAlq materials with 30 ${\AA}$ thickness. We obtained the ITO having the work function value of 5.02 eV using $N_2$ plasma treatment method with the plasma power 200 W. Type I device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/$Alq_3$/LiF/Al:Li, and type II device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/HBL/$Alq_3$/LiF/Al:Li. We have analyzed the characteristics of Type I and Type II device. The characteristics of the device were most efficiency on occasion of using a hole blocking layer of BAlq material with 30 ${\AA}$ thickness. Current density was 226.75 $mA/cm^2$, luminance was 10310 $cd/m^2$, Current efficiency was 4.55 cd/A, power efficiency was 1.43 lm/W at an applied voltage of 10V. The maximum EL wavelength of the fabricated blue organic light-emitting device was 456nm. The full-width at half-maximum (FWHM) for the EL spectra was 57nm. CIE color coordinates were x=0.1438 and y=0.1580, which was similar to NTSC deep-blue color with CIE color coordinates of x=0.14 and y=0.08.

• Proceedings of the Plant Resources Society of Korea Conference
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• 2023.04a
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• pp.19-19
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• 2023

제비꽃속 34분류군의 61개체를 대상으로 엽록체 DNA 게놈 특이 유전자의 특징을 알아보고자 하였다. 61개체의 엽록체 게놈 전체 길이는 155,535~158,940 bp 로 모두 전형적인 사분할 구조였다. 지역별로는 LSC 지역이 84,826~87,250 bp, SSC 지역이 16,338~18,654 bp, 그리고 IR 지역이 26,029~27,192 bp 였다. 유전자 개수는 131개로 84개 protein coding-gene, 37개 tRNA 유전자, 8개 rRNA유전자, 그리고 2개의 유사유전자인 𝜓rps19, 𝜓ycf1으로 구성되어 있었다. LSC/IRa 경계에 위치한 rps19 유전자 길이는 279 bp로 모든 분류군에서 동일하였으며, 𝜓rps19의 길이는 다양했으나 유전자 개수에는 영향을 미치지 않았다. SSC/IRb 경계에 위치한 ycf1 유전자 길이는 약 5,600 bp 였으나, V. japonica (MZ151699) 1개체에서는 다른 종에 비해 약 1,000 bp 위치에서 발생한 점돌연변이로 인해 종결 코돈이 나타나는 특징을 보였다. 한편 13분류군의 23개체에서는 𝜓ycf1의 길이가 650 bp 정도 짧은 것을 확인하였는데, 이 종류들은 원예종인 V. tricolor (ON262802) 이외에는 모두 줄기가 없는 분류군들로 IR 지역의 확장과 SSC 지역의 수축에 의한 것으로 판단된다. ndhF는 대체로 SSC 지역에 위치하나, V. inconspicua (MZ065354), V. mongolica (MW802534, ON548135), V. yunnanfuensis (MW802541) 등 4개체에서는 IRa/SSC 경계에 위치하면서 유사유전자가 발생하였고, 그 결과 다른 제비꽃 종류에 비해 유전자 개수가 132개로 차이를 보였다. 또한, V. collina (OP271831), V. mirabilis (MH256000), V. tricolor (ON262802) 등 3분류군에서는 SSC 지역이 inversion 되어 엽록체 이성질체가 존재함을 확인하였다. 이상의 결과를 종합하면, 제비 꽃속 엽록체 게놈 61개체의 ycf1, 𝜓ycf1, ndhF, 𝜓ndhF 등은 유전자 길이와 개수 등에 차이를 보이는 것으로 나타났으며, 제비꽃속에서도 엽록체 이성질체가 존재함을 확인할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.