• Journal of Biomedical Engineering Research
• /
• v.18 no.3
• /
• pp.267-272
• /
• 1997

he scintillation detector having $BaF^2$ crystal with 3.6cm dia${\times}$2.0 cm thick was provided. The energy and timing characteristics were measured and compared with NaI(Tl) scintillation detectors, which widely used in unclear medicine. In order to measure the energy spectrum, the radioactive sources used were $^{22}Na,\;^{54}Mn,\;^{57}Co,\;^{137}Cs$ and the source to detector distance was 7cm. For the timing characteristic, NaI(Tl)(1" ${\times}$ 1")-$BaF^2$ and NaI(Tl)(3" ${\times}$ 3")-$BaF^2$ timing coincidence systems were prepared and the used source was $^{22}Na$ emitting 511keV annihilation photons. For the 511keV gamma-ray emitted from $^{22}Na$, It was revealed that the timing response of the $BaF^2$ detector was faster than NaI(Tl)(1" ${\times}$ 1") and NaI(Tl)(3" ${\times}$ 3") detector used in this experimental investigation. The energy characteristics of the $BaF^2$ detector had a good values for about 500keV energy range.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.9 no.5
• /
• pp.19-26
• /
• 1972

A newly developed quartz frequency modulator utili3ing a V. V. C. diode is briefly described. Its electrical characteristics-including modulation linearity, modulation distortion, and carrier frequency stability depending upon the variation of the environmental temperature and the applied power voltage, etc.-are suitable for the modulator of a mobile or a portable F.M. transmitter according to the experimental results. The excellent over-all electrical characteristics were proved from the experimental development of the two kinds of transceivers. One is the single channal transceiver which contains a direct frequency modulator at the carrier frequency of 52.750 MHg. The other is the dual channel transceiver (the frequencies are selected from about 40 channels without tuning adjustment) whose operational frequency is composed of a modulated frequency of 10.7 MHz and the frequency generated at a channel control oscillator, As mentioned above, it is realized that the electrical characteristics of this modulation method are suitable for portable F. M. transceivers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.211-214
• /
• 1998

The composite of polyvinylalcohol(PVA) and lithium salts(LiBF$_4$) is prepared for a solid-state electrolyte of electric double layer capacitor. The composite shows a good ionic conductivity. The solid-state electric double layer capacitor is made of PVA-LiBF$_4$ composite, activated carbon and etc.. As evaluation of characteristics of capacitor, capacitance change which measured by charge-discharge test with 2.2V~0V at 8$0^{\circ}C$ for 800 hours, was about 10%. The gravimetric and volumetric capacitance were 10.0 F/g~30.0 F/g and 16.0F/㎤~F/㎤, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.5
• /
• pp.40-47
• /
• 1998

This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.497-500
• /
• 1999

This paper reports on the fabrication and characteristics of recessed gate GaN MESFETs fabricated using a photoelectrochemical wet etching method. The unique etching process utilizes photo-resistive mask and KOH based etchant. GaN MESFETs with successfully recessed gate structure was characterized in terms of dc and RF performance. The fabricated GaN MESFET exhibits a current saturation at $V_{DS}$ = 4 V and a pinch-off at $V_{GS}$ =-3V The peak drain current of the device is about 230mA/mm at 300 K and the value is remained almost same for 500K operation. The $f_{T}$ and $f_{max}$ from the device are 6.357Hz and 10.25 GHz, respectively.y.y.

• Journal of Sensor Science and Technology
• /
• v.24 no.3
• /
• pp.181-187
• /
• 2015

The magnetoelectric characteristics on layered $Fe_{78}B_{13}Si_9/PZT$ and $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9$($t_m=0.017$, 0.034mm) composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range and resonance frequency range. The optimal bias magnetic field $H_{dc}$ of these samples was about 23~63 Oe range. The Me coefficient of $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9(t_m=0.034mm)$ composites reaches a maximum of $186mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, f=50 Hz and a maximum of $1280mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, resonance frequency $f_r=95.5KHz$. The output voltage shows linearity proportional to ac fields $H_{ac}$ and is about U=0~130.6 mV at $H_{ac}=0{\sim}7Oe$, f=50 Hz, U=0~12.4 V at $H_{ac}=0{\sim}10Oe$, $f_r=95.5KHz$(resonance frequency). The optimal frequency(f=50 Hz) of this sample is around the utility ac frequency(f=60 Hz). Therefore, this sample will allow for ac magnetic field sensor at utility frequency and low bias magnetic fields $H_{dc}$.

• Phonetics and Speech Sciences
• /
• v.5 no.4
• /
• pp.71-78
• /
• 2013

The purpose of this study was to compare the acoustic voice outcomes of children with cochlear implant to those of children with normal hearing. Participants were 41 children using unilateral cochlear implant (18 males and 23 females), and children with normal hearing from the same age and sex. Mean age of implantation was approximately 3 years old, mean duration of implant use was 4 years in CI group. Acoustic analyses were performed using MDVP of CSL. Speech samples were 3 sustained vowels, /a, i, u/. 9 parameters (F0, Fhi, Flo, Jitter, Shimmer, vF0, vAm, NHR, and SPI) were analyzed. Children with CI did not show the significant differences in those parameters after the vowel /a/ phonation. Meanwhile, there were significantly different results in F0, Fhi, vF0, and SPI after /i, u/ phonation. These results revealed that differences of voice characteristics in children with CI compare to children with NH persist regarding vowel context. It suggests that high vowels would recommend as speech samples for acoustic evaluation. Futhermore perceptual analysis and speech therapy for phonation control would be necessary for children with CI.

• Journal of the Korean Society for Precision Engineering
• /
• v.13 no.12
• /
• pp.70-77
• /
• 1996

Fatigue tests were carried out at high temperature on a Cr-Mo-V steel in order to assess the fatigue life of components used in power plants. The characteristics of high temperature fatigue were divided in terms of cycle-dependent fatigue and time-dependent fatigue, each crack propagation rate was examined with respect to fatigue J-integral range, .DELTA. J$_{f}$and creep J-integral range, .DELTA. J$_{c}$. The fatigue life was evaluated by analysis of J-integral value at the crack tip with a dimensional finite element method. The results obtained from the present study are summarized as follows : The propagation characteristics of high temperature fatigue cracks are determined by .DELTA. J$_{f}$for the PP(tensile plasticity-compressive plasticity deformation) and PC(tensile plasticity - compressive creep deformation) stress waveform types, and by .DELTA. J$_{c}$for the CP(tensile creep- compressive plasticity deformation) stress waveform type. The crack propagation law of high temperature fatigue is obtained by analysis of J-integral value at the crack tip using the finite element method and applied to examine crack propagation behavior. The fatigue life is evaluated using the results of analysis by the finite element method. The predicted life and the actual life are close, within a factor of 2.f 2.f 2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.389-390
• /
• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.43-44
• /
• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.