• Journal of IKEEE
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• v.27 no.4
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• pp.399-404
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• 2023

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when V_read is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.11-15
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• 1994

The TSEE characteristics of LiF(Mg,Cu,Na,Si)phosphor for gamma and beta rays are described. The TSEE glow curve of this phosphor showed 5 peaks in the range from $20^{\circ}C$ to $400^{\circ}C$ and its main peak appeared at $240^{\circ}C$. The sensitivity of the phospor for $^{60}Co$ gamma rays was about 450counts/mR. TSEE energy dependence for various beta radiation was nearly constant (${\pm}10%$) in the mean beta particle energy range from 0.02MeV to 0.8MeV. The efficiency of TSEE of the phosphor for beta radiation was $(2{\sim}15){\times}10^{-3}$.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.11-16
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• 2009

Composite electrodes for redox supercapacitor were prepared potentiodynamically by the deposition of $RuO_2$ and the co-deposition of Ru-Co mixed oxide on the surface of single-walled carbon nanotube. Electrode of Ru-Co mixed oxide, in which Ru(13.13 wt%) and Co(2.89 wt%) were deposited on the carbon nanotube, exhibited a similar specific capacitance(${\sim}620\;F\;g^{-1}$) with $RuO_2$ electrode at a low potential scan rate($10\;mV\;s^{-1}$), but showed a superior one ($570\;F\;g^{-1}$) at a high scan rate($500\;mV\;s^{-1}$) than that of $RuO_2$($475\;F\;g^{-1}$). Such increase in the specific capacitance at high scan rate by the co-deposition of Ru and Co species was due to the structural support of Co species to provide the electronic conduction through Ru species.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.604-610
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• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.368-373
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• 1998

As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.235-240
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• 2000

Screen-printing and doctor blade method were investigated and proposed as an electrode coating process for high power capacitor. CV measured from the amorphous $MnO_2$ electrode prepared by screen-printing shows closer to ideal capacitor characteristics. Specific capacitances calculated from CVs with potential scan rate of 50mV/s were 5.8, 81.8, and 172.0 F/g for electrode thickness of $140{\mu}m,\;24{\mu}m,\; 3{\mu}m$, respectively. Assumed that utilization of active $MnO_2$ in electrode of screen-printing is $100\%$, those were $3.4\%$ in one of paste method and $47.6\%$ in one of doctor blade method. The screen-printing can be good technique to coat thin film on current collector for high power application.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.205-208
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• 2001

본 연구에서는 소결온도와 치환원소에 따른 서클레이터/아이솔레이터용 YIG 페라이트의 미세구조와 전자기적 특성을 고찰하고자 하였다. Ca, V, In을 치환시킨 YIG 페라이트를 분무건조기를 사용하여 준구형 과립상태로 만들고, 일반적인 세라믹 제조 공정에 따라 12$50^{\circ}C$, 1275$^{\circ}C$, 130$0^{\circ}C$, 13$25^{\circ}C$에서 각각 소결하였다. 제조된 YIG 페라이트에 대한 기본 물성과 자기 특성을 밀도측정기, XRD, SEM, VSM, FMR(Ferromagnetic Resonance) 등을 이용하여 측정 분석하였다. $Y_{1.6}$C $a_{1.4}$F $e_4$ $V_{0.7}$I $n_{0.3}$ $O_{12}$ 조성의 YIG 페라이트에 대한 전자기적 특성 측정 결과 130$0^{\circ}C$에서 소결한 YIG 페라이트가 높은 포화자화(4$\pi$Ms) 값과 낮은 자기공명반치폭($\Delta$H)을 지닌 우수한 전자기적 특성을 나타내었다. 전자기적 특성을 나타내었다.나타내었다.다.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.747-752
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for logic devices as well as input and output (I/O) circuits, different from the previous shrink methodologies which shrink only core device. Thin gate oxide was changed to decoupled plasma nitridation(DPN) oxide as a thin gate oxide (1.2V) to reduce the flicker noise, resulting in three to five times lower flicker noise than pre-shrink process. Unavoidable issue by shrink is capacitor for this normally metal insulator metal (MIM). To solve this issue, 20% higher unit MIM capacitor ($1.2fF/{\mu}m^2$) was developed and its performance were evaluated.

• Phonetics and Speech Sciences
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• v.7 no.1
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• pp.67-77
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• 2015

The purpose of this study was to investigate how deaf parents influence the speech sounds of their normal-hearing children. Twenty four normal hearing children of deaf adults (CODA) and normal hearing parents (NORMAL) aged 3 to 4 participated in the study. The F1, F2, and the vowel triangle area in 7 vowels and the voice onset times (VOTs) and closure durations in 9 stops were measured. The results of the study are as follows. First, the F1 and F2 for all vowels were higher and the vowel triangle area was larger in CODA than in NORMAL although they were not statistically significant. Second, VOTs in $C_{stop}V$ for $/t^*/$ and in $VC_{stop}V$ for $/t^*/$, $/t^h/$, and $/k^h/$ were longer in CODA than in NORMAL. Most stops in CODA appeared to be longer VOTs for most phonemes. Third, the manner and place of articulation in stops did not make a difference between CODA and NORMAL in VOTs and closed durations. CODA does not demonstrate the speech characteristics of deaf people, however, they seem to speak differently than NORMAL, which means CODA might be influenced by a different linguistic environment created by deaf parents in some way.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.26 no.1
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• pp.8-13
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• 1990

The microscopic relaxation parameters for the single crystal were measured by using thermally stimulated depolarization (TSD). Initial rise method, various heating rate method and total glow peak method were used for the determination of the activation energy and Debye relaxation time from TSD glow curves. Activation energy, pre-exponential factor and relaxation time for impurity-vacancy dipole reorientation were 0.55eV, 1.97$\times$10 super(-12) sec and 12.19sec in average, respectively. Dielectric dissipation factor for the crystal was calculated from the measured TSD glow curve, its value being about 3$\times$10 super(-2).