• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.440-448
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• 2001

The operation properties of DBD plasma reactors were observed by using 20 kV square pulse at the cylindrical and planar type of reactors in the condition of air pressure. The optimum operation frequency $f_0$ which optimizes the efficiency of operation was found as such $f_0\proptoexp(-C)$ when the current-voltage curve and charge-voltage curve were observed. Using these properties the dissipated power was evaluated. The dissipated power at the optimum frequency of operation was varied as the value of capacitance which is dependent on the structure and the dielectric material of the reactor, and had the maximum value at the specific value of capacitance. With these value of capacitance, DBD reactors which has a high level of efficiency can be formed.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.162-168
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• 2013

$Li_2MnO_3-LiMO_2$(M=Ni, Co, Mn) nano-composite is a promising cathode material for xEV application due to its high theoretic capacity. However high voltage operating system of $Li_2MnO_3-LiMO_2$(M=Ni, Co, Mn) has worked as a hurdle in its application because of the inherent demerits, such as cycle life degradation and gas evolution. In order to enhance cell performance of $Li_2MnO_3-LiMO_2$(M=Ni, Co, Mn)/graphite cell, we examined electrolyte mainly composed of FEC, fluroalkyl ether and $LiPF_6$ (F-based EL). F-based EL showed much better discharging retention ratio than 1.3 M $LiPF_6$ EC/EMC/DMC (3/4/3, v/v/v) (STD). Furthermore gas evolution, especially CO and $CO_2$ during $60^{\circ}C$ storage for 30 days was dramatically reduced owing to thermal stable SEI formation effect of F-based EL.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.13-19
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• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.194-199
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• 1997

When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is $3.2{\times}10^{4}\;V/A{\cdot}T$. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.648-654
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• 2003

Diamond MIS(Metal-Insulator-Semiconductor) diodes and MISFETs(Metal-Insulator-Semiconductor Field Effect Transistors) were fabricated by employing various fluorides as gate insulator, and their electrical properties were closely investigated by means of C-V measurements. The A1/BaF$_2$/diamond MIS structure exhibited outstanding electrical properties. The MIS diode showed a very low surface state density of ∼10$\^$10//$\textrm{cm}^2$ eV near the valence band edge, and the observed effective mobility(${\mu}$$\_$eff/) of the MISFET was 400 $\textrm{cm}^2$/Vs, which is the highest value obtained until now in the diamond FET. From the chemiphysical point of view, the above result might be explained by the reduction of adsorbed-oxygen on the diamond surface via strong chemical reaction by the constituent Ba atom in the insulator during the film deposition(Oxygen-Gettering Effect).

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Journal of IKEEE
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• v.13 no.2
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• pp.194-199
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• 2009

In this study, ultra high-voltage (170kV AC), reliable 80pF mica capacitors for partial discharge system application were investigated. For capacitors design, Program was developed to sampling of series and parallel parameters. Mica was used as the dielectric of the capacitors. Using the conservative design rule, over 3 individual 50$\mu$m thick mica sheets with a size of 30mm$\times$35mm were used with lead foils to form a parallel capacitor element and 20 mica sheets were interleaved with lead foils to form a series stack of parallel capacitor element to meet the requirements of the capacitors. The dimension of the fabricated 80pF capacitor for 17kV AC were 90mm$\times$90mm. The high-frequency characteristics of the capacitance (C) and dissipation factor (D) of the developed capacitors were measured using a capacitance meter. The developed capacitor exhibited C of 79.5pF, had D of 0.001% over the frequency ranges of 150kHz to 50MHz, had a self-resonant frequency of 65MHz.

• Journal of Sensor Science and Technology
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• v.24 no.3
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• pp.181-187
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• 2015

The magnetoelectric characteristics on layered $Fe_{78}B_{13}Si_9/PZT$ and $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9$($t_m=0.017$, 0.034mm) composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range and resonance frequency range. The optimal bias magnetic field $H_{dc}$ of these samples was about 23~63 Oe range. The Me coefficient of $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9(t_m=0.034mm)$ composites reaches a maximum of $186mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, f=50 Hz and a maximum of $1280mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, resonance frequency $f_r=95.5KHz$. The output voltage shows linearity proportional to ac fields $H_{ac}$ and is about U=0~130.6 mV at $H_{ac}=0{\sim}7Oe$, f=50 Hz, U=0~12.4 V at $H_{ac}=0{\sim}10Oe$, $f_r=95.5KHz$(resonance frequency). The optimal frequency(f=50 Hz) of this sample is around the utility ac frequency(f=60 Hz). Therefore, this sample will allow for ac magnetic field sensor at utility frequency and low bias magnetic fields $H_{dc}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.1-4
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• 1994

In this study. the microwave dielectric properties, such at dielectric constant(${\varepsilon}_{\gamma}$), unloaded quality factor multiplied with resonant frequency($Q_{u}$.f), and temperature coefficient of resonant frequency(${\tau}_{f}$), were investigated for the low-temperature sintered (Pb, Ca)$ZrO_3$ with $V_2O_{5}$ additives as well as structural properties. As a result, (Pb,Ca)ZrO$_3$ with 0.2 wt% $V_2O_{5}$ additive, sintered at $1200^{\circ}C$, showed good properties like ${\varepsilon}_{\gamma}$ 109, $Q_{u}$.f 2736 GHz, and ${\tau}_{f}$ -2.94 ppm/$^{\circ}C$. Especially ${\tau}_{f}$ was much better than ($Pb_{0.63}Ca_{0.37}$)$ZrO_3$ of which ${\tau}_{f}$ was known to be + 13.4 ppm/$^{\circ}C$, so it seems to be applicated in micorowave device components.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.105-105
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• 1999

차세대 기억소자에서는 집접도의 증가, 고속화, 그리고 미세화에 따라 배선간으 최소선폭이 작아지고, 새로운 다층 배선기술이 요구되는 가운데 층간절연막의 재료와 형성기술은 소자의 특성을 향상시켜주는 중요한 요소로서 열적안정성, 저유전율, 평탄화특성 등에 핵심을 두고 연구되고 있다. 본 연구에서는 5인치 p-Si(100) 위에 FTES와 O2를 precursor로 하고 carrier gas를 Ar gas하여 ICP CVD 방법으로 저유전율의 Fluorocarbonated-SiO2 박막을 형성하였다. 0.1-1kW, 13.56MHz인 rf power를 사용하였으며, 증착은 RT에서 5~10분으로 하였다. 형성된 박막은 FTIR(fourier transform infrared), XPS(x-ray photoelectron spectroscopy), 그리고 ellipsopsometer 등을 이용하여 결합모드와 F농도, 균일도 등을 측정하고, I-V와 C-V 측정장치, 그리고 SERM(scanning electrion microscopy) 등을 이용하여 유전상수, 누설전류, dielectric breakdown voltage, 그리고 박막의 stepcoverage를 측정하였다. 제작된 박막의 신뢰성은 열처리에 따른 전기적 특성으로부터 조사하였다. 형성된 fluorocarbonated 박막 결합모드는 Si-F, Si-O, O-C, C-C와 C-F였고 O2:FTES:Ar 유량을 1sccm:10sccm:6sccm으로 하여 증착한 시료에서 유전율은 2.8이었으며, 누설전류밀도는 8$\times$10-9A/cm2, Breakdown voltage는 10MV/cm 이상, 그리고 stepcoverage는 91%로 측정되었다.