• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.89-90
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• 2009

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.1-8
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• 2005

A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.

• Journal of Energy Engineering
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• v.16 no.2
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• pp.58-63
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• 2007

In recent years, the technologies for the production of synthetic fuel from natural gas have been attracting considerable interest because of high oil prices. While oil prices remaining high, GTL (Gas-to-Liquids) technology would provide an attractive option for utilizing gas resources. Furthermore, GTL fuels contain almost zero sulfur and low aromatics and have a very high cetane so that they are estimated to be environmentally friendly diesel fuels able of meeting the advanced fuel specifications of the 21st century. GTL process generally consists of three primary steps: synthesis gas production from natural gas reforming, hydrocarbon production from synthesis gas by Fischer-Tropsch (F-T) synthesis, product upgrading by hydrocracking/hydroisomerization. This paper presents a brief summary of GTL technology and worldwide development trend about it focusing on the reforming of natural gas and the F-T synthesis.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.10
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• pp.2533-2542
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• 1994

This paper suggests a simple approach to determining the screw characteristics for a three0dimensional flow in a channel with a finite aspect ratio(ratio of a width to a depth, W/H) by introducing a Total Shape Factor($F_t$) to correct a two-dimensional flow analysis for a channel with an infinite aspect ratio. In the present study, the Total Shape Factor($F_t$) was defined as a ratio of a net flow rate obtained by the three-dimensional analysis to that by the two-dimensional analysis. In the proposed approach, the quantity, $ \frac{{\partial}F_t}{\partial(H/W)}$ turns out to be almost constant and to play an important role in understanding the effects of the flights. Therefore, $ \frac{{\partial}F_t}{\partial(H/W)}$ are extensively reported in this paper in terms of several dimensionless parameters. This simple approach with such database will be very useful for extruder designers to predict the screw characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.14-22
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• 2010

The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).

• Membrane Journal
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• v.22 no.3
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• pp.171-177
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• 2012

Effect of humic acid (HA), photo-oxidation and adsorption with periodic $N_2$ back-flushing was investigated in hybrid process of ceramic ultrafiltration and photocatalyst for drinking water treatment. It was compared and investigated with the previous result at water back-flushing in viewpoints of membrane fouling resistance ($R_f$), permeate flux (J), and total permeate volume ($V_T$). As decreasing HA, $R_f$ decreased dramatically and J increased, and finally $V_T$ was the highest at HA 2 mg/L. As HA concentration increased from 2 to 10 mg/L, the membrane fouling resistance after 180 mins' operation ($R_{f,180}$) improved 0.8 times more than that of water back-flushing. Therefore, HA concentration should affect on the membrane fouling at $N_2$ back-flushing than water back-flushing. Turbidity treatment efficiencies were almost constant independent of HA concentration, but HA treatment efficiency was the maximum at HA 2 mg/L. This means that adsorption and photo-oxidation of photocatalyst beads could removed HA at HA 2 mg/L, but it was not enough at 4 mg/L. Beyond HA 6 mg/L, UF could effectively treat HA by thick cake layer on membrane surface and severe inner membrane fouling.

• Membrane Journal
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• v.24 no.1
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• pp.39-49
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• 2014

The effects of pH and oxygen back-flushing were investigated in hybrid process of ceramic microfiltration and PES (polyethersulfone) beads loaded with titanium dioxide ($TiO_2$) photocatalyst for advanced drinking water treatment in viewpoints of membrane fouling resistance ($R_f$), permeate flux (J), and total permeate volume ($V_T$). As increasing pH, $R_f$ decreased and J increased. Finally the maximum $V_T$ could be acquired at pH 9. Treatment efficiencies of turbidity was almost same independent of pH. Treatment efficiency of dissolved organic matters (DOM) decreased as increasing pH. As results of comparing the oxygen and nitrogen back-flushing, $R_{f,180}$ at oxygen back-flushing was the lower than that at nitrogen back-flushing, and the dimensionless final permeate flux ($J_{180}/J_0$) by initial permeate flux ($J_0$) at oxygen back-flushing was maintained the higher than that at nitrogen back-flushing except 10 and 12 min of back-flushing period (FT). Treatment efficiency of turbidity at oxygen back-flushing was a little higher than that at nitrogen back-flushing. Treatment efficiency of the DOM at nitrogen back-flushing was the higher than that at oxygen back-flushing. Also, treatment efficiency of turbidity at saturated oxygen was similar with those of oxygen and nitrogen back-flushing, but the treatment efficiency of DOM was increased significantly because OH radical could be generated by reaction between saturated oxygen and photocatalyst.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.179-179
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• 2003

현재 차세대 메모리로 연구되고 있는 것 중 가장 각광 받는 것은 PRAM 이다. MRAM의 경우 복잡한 공정 때문에 상용화에 많은 어려움이 따르는데 반해 PRAM은 DRAM과 유사한 구조를 가지고 있기 때문에 기존 DRAM의 공정라인을 사용할 수 있다는 장점을 가지고 있다. 하지만 PRAM은 높은 작동전류가 필요하다는 단점을 가지고 있다. 따라서 PRAM이 상용화 되기 위해서는 2mA 이하의 작동전류에서 상변환이 일어나야 한다. 여기서 말하는 상변환이란 결정질 상태를 비정질 상태로 변환 시키는 것을 의미한다. 본 연구에서는 우선 8F$^2$ 크기(F=0.15$\mu\textrm{m}$)의 DRAM 단위소자 메모리 구조를 이용하여 lT/lRPCRAM 모델을 구축하였다. 구축된 모델을 이용하여 요구되는 작동전류(2mA이하)에서의 PRAM의 온도 분포를 시뮬레이션을 통하여 예측하였다. 또한 단위소자를 구성하는 재료의 물성 변화가 소자 내부의 온도 분포에 미치는 영향을 분석하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.771-773
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• 2014

본 논문에서는 장거리 레이더용 차량 충돌 방지 77-GHz CMOS 믹서를 제안한다. 이러한 회로는 2볼트 전원전압에서 동작하며, 저 전압 전원 공급에서도 높은 변환 이득과 낮은 변환 손실 및 낮은 잡음지수를 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계하였다. 전체 칩 면적을 줄이기 위해 수동형 인덕터 대신 전송선(Transmission Line) 을 이용하였다. 본 논문에서 설계한 믹서는 약 5.2dB의 우수한 변환이득 특성과 2.1dBm의 우수한 IIP3 특성을 보였다.

• Membrane Journal
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• v.22 no.4
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• pp.243-250
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• 2012

The effect of water back-flushing period (filtration time, FT) was investigated in hybrid process of alumina microfiltration and photocatalyst for advanced drinking water treatment in this study, and compared with the previous studies with carbon microfiltration or alumina ultrafiltration membranes. The FT was changed in the range of 2~10 min with fixed 10 sec of BT. Then, the FT effects on resistance of membrane fouling ($R_f$), permeate flux (J) and total permeate volume ($V_T$) were observed during total filtration time of 180 min. As decreasing FT, $R_f$ decreased and J increased as decreasing FT, which was same with the previous results with carbon microfiltration or alumina ultrafiltration membranes. The treatment efficiency of turbidity was high beyond 98.1%, and the effect of FT was not shown on treatment efficiency of turbidity, which was same with the previous result of carbon microfiltration. The treatment efficiency of organic matters was the highest value of 89.6 % at FT 8 min, which was a little higher than those of the previous results, and the effect of FT was not shown on treatment efficiency of organic matters.