• Title/Summary/Keyword: External resistor

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Robust Vector Control of Wound-Rotor Induction Motor without Speed Sensor

  • Lee, Hong-Hee
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.137-142
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    • 1998
  • This paper describes a simple vector control scheme for the wound rotor type induction motors(WRIM) without the additional speed sensor in order to remove the external resistor bank which is usually adapted for the WRIM speed control. The motor angular speed is obtained indirectly from the slip angular speed is obtained indirectly from the slip angular speed and the slip angular speed is estimated by detecting the rotor currents only. Because the motor parameters are not included in the estimation algorithm, the proposed algorithm is free from the variation of the motor parameters and the robust sensorless vector control can be achieved. The performance of the proposed scheme is verified through the digital simulation.

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Mixed-Mode Simulation of the Power MOSFET with Current Limiting Capability (전류 제한 능력을 갖는 전력용 MOSFET의 Mixed-Mode 시뮬레이션)

  • Yun, Chong-Man;Choi, Yearn-Ik;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1451-1453
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    • 1994
  • A monolithic current limiting power MOSFET, which may be easily fabricated by the conventional DMOS process, is proposed. The proposed current limiting MOSFET consists of main power cells, sensing cells, and NPN lateral bipolar transistor so that users can adjust the current limiting levels with only one external resistor. The behaviors of the proposed device are numerically simulated and analyzed by 2-D device simulator MEDICI and mixed-mode simulator CA-AAM(Circuit Analysis Advanced Application Module).

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Programmable Digital On-Chip Terminator

  • Kim, Su-Chul;Kim, Nam-Seog;Kim, Tae-Hyung;Cho, Uk-Rae;Byun, Hyun-Guen;Kim, Suki
    • Proceedings of the IEEK Conference
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    • 2002.07c
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    • pp.1571-1574
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    • 2002
  • This paper describes a circuit and its operations of a programmable digital on-chip terminator designed with CMOS circuits which are used in high speed I/O interface. The on-chip terminator matches external reference resistor with the accuracy of ${\pm}$ 4.1% over process, voltage and temperature variation. The digital impedance codes are generated in programmable impedance controller (PIC), and the codes are sent to terminator transistor arrays at input pads serially to reduce the number of signal lines. The transistor array is thermometer-coded to reduce impedance glitches during code update and it is segmented to two different blocks of thermometer-coded transistor arrays to reduce the number of transistors. The terminator impedance is periodically updated during hold time to minimize inter-symbol interferences.

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Comparison of Electricity Generation Efficiencies depending on the Reactor Configurations in Microbial Fuel Cells (미생물 연료 전지의 반응조 형상에 따른 전기 생산효율 비교)

  • Lee, Yunhee;Oa, Seong-Wook
    • Journal of Korean Society on Water Environment
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    • v.26 no.4
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    • pp.681-686
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    • 2010
  • Two different MFC designs were evaluated in batch mode: single compartment combined membrane-electrodes (SCME) design and twin-compartment brush-type anode electrodes (TBE) design (single chamber with two air cathodes and brush anodes at each side of the reactor). In SCME MFC, carbon anode and cathode electrodes were assembled with a proton exchange membrane (PEM). TBE MFC was consisted of brush-type anode and carbon cloth cathode electrodes without the PEM. A brush-type anode was fabricated with carbon fibers and was placed close to the cathode electrode to reduce the internal resistance. Substrates used in this study were glucose, leachate from cattle manure, or sucrose at different concentrations with phosphate buffer solution (PBS) of 200 mM to increase the conductivity thereby reduce the internal resistance. Hydrogen generating bacteria (HGB) were only inoculated in TBE MFC. The peak power densities ($P_{peak}$) produced from the SCME systems fed with glucose and leachate were 18.8 and $28.7mW/m^2$ at external loads of 1000 ohms, respectively. And the $P_{peak}$ produced from TBE MFC were 40.1 and $18.3mW/m^2$ at sucrose concentration of 5 g/L and external loads of 470 ohms, with a mediator (2-hydroxy-1, 4-naphthoquinone) and without the mediator, respectively. The maximum power density ($P_{max}$) produced from mediator present TBE MFC was $115.3mW/m^2$ at 47 ohms of an external resistor.

Development of a Temperature Sensor for OLED Degradation Compensation Embedded in a-IGZO TFT-based OLED Display Pixel (a-IGZO TFT 기반 OLED 디스플레이 화소에 내장되는 OLED 열화 보상용 온도 센서의 개발)

  • Seung Jae Moon;Seong Gyun Kim;Se Yong Choi;Jang Hoo Lee;Jong Mo Lee;Byung Seong Bae
    • Journal of Sensor Science and Technology
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    • v.33 no.1
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    • pp.56-61
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    • 2024
  • The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.

Simple one-step synthesis of carbon nanoparticles from aliphatic alcohols and n-hexane by stable solution plasma process

  • Park, Choon-Sang;Kum, Dae Sub;Kim, Jong Cheol;Shin, Jun-Goo;Kim, Hyun-Jin;Jung, Eun Young;Kim, Dong Ha;Kim, Daseulbi;Bae, Gyu Tae;Kim, Jae Young;Shin, Bhum Jae;Tae, Heung-Sik
    • Carbon letters
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    • v.28
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    • pp.31-37
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    • 2018
  • This paper examines a simple one-step and catalyst-free method for synthesizing carbon nanoparticles from aliphatic alcohols and n-hexane with linear molecule formations by using a stable solution plasma process with a bipolar pulse and an external resistor. When the external resistor is adopted, it is observed that the current spikes are dramatically decreased, which induced production of a more stable discharge. Six aliphatic linear alcohols (methanol-hexanol) containing carbon with oxygen sources are studied as possible precursors for the massive production of carbon nanoparticles. Additional study is also carried out with the use of n-hexane containing many carbons without an oxygen source in order to enhance the formation of carbon nanoparticles and to eliminate unwanted oxygen effects. The obtained carbon nanoparticles are characterized with field emission-scanning electron microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The results show that with increasing carbon ratios in alcohol content, the synthesis rate of carbon nanoparticles is increased, whereas the size of the carbon nanoparticles is decreased. Moreover, the degree of graphitization of the carbon nanoparticles synthesized from 1-hexanol and n-hexane with a high carbon (C)/oxygen (O) ratio and low or no oxygen is observed to be greater than that of the carbon nanoparticles synthesized from the corresponding materials with a low C/O ratio.

Design of a High-Efficiency CMOS DC-DC Boost Converter Using a Current-Sensing Feedback Method (전류 감지 Feedback 기법을 사용한 고효율 CMOS DC-DC Boost 변환기의 설계)

  • Jung Kyung-Soo;Yang Hui-Kwan;Cha Sang-Hyun;Lim Jin-Up;Choi Joong-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.9 s.351
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    • pp.23-30
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    • 2006
  • This paper presents a design of a high-efficiency CMOS DC-DC boost converter using a current-sensing feedback method. High-precision current-sensing circuity is incorporated in order to sense the current flowing in the inductor, which determines the switching scheme of the pulse-width modulation. The external components or large chip area for the frequency compensation can be avoided while maintaining the stable operations of the converter. Various input/output voltage levels can be available through the external resistor strings. The designed DC-DC converter is fabricated in a 0.18-um CMOS technology with a thick-gate oxide option. The converter shows the maximum efficiency over 90% for the output voltage of 3.3V and load current larger than 200mA. The load regulation is 1.15% for the load current change of 100mA.

A Design of Integrated Circuit for High Efficiency current mode boost DC-DC converter (고효율 전류모드 승압형 DC-DC 컨버터용 집적회로의 설계)

  • Lee, Jun-Sung
    • 전자공학회논문지 IE
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    • v.47 no.2
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    • pp.13-20
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    • 2010
  • This paper describes a current mode PWM DC-DC converter IC for battery charger and supply power converter for portable electronic devices. The maximum supply voltage of IC is 40[V] and 2.8[V]~330[V] DC input power is converted to higher or programmed DC voltage according to external resistor ratio or wire winding ratio of transformer. The maximum supply output current is 3[A] over and voltage error of output node is within 3[%]. The whole circuit needed current mode PWM DC-DC converter circuit is designed. The package dimensions and number of external parts are minimized in order to get a smaller hardware size. The power consumption is smaller then 1[mW] at stand by period with supply voltage of 3.6[V] and maximum energy conversion efficiency is about 86[%]. This device has been designed in a 0.6[um] double poly, double metal 40[V] CMOS process and whole chip size is 2100*2000 [um2].

Development of Sensory Feedback System for Myoelectric Prosthetic Hand (전동의수 사용자를 위한 감각 측정 및 전달 시스템 개발)

  • Bae, Ju-Hwan;Jung, Sung Yoon;Kim, Shinki;Mun, Museong;Ko, Chang-Yong
    • Journal of the Korean Society for Precision Engineering
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    • v.32 no.10
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    • pp.851-856
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    • 2015
  • This study aimed to develop a sensory feedback system which could measure force and temperature for the user of myoelectric prosthetic hands. The Sensory measurement module consisted of a force sensing resistor to measure forces and non-contact infrared temperature sensor. These sensors were attached on the fingertips of the myoelectric prosthetic hand. The module was validated by using standard weights corresponding to external force and a Peltier module. Sensory transmission module consisted of four vibration motors. Eight vibration patterns were generated by combining motion of each vibration motor and were dependent on kinds and/or magnitude. The module was verified by using standard weigts and water at varying temperatures. There were correlations of force and temperature between the sensory measurement module and standard weight and water. Additionally, exact vibration patterns were generated, indicating the efficacy of the sensory feedback system for the myoelectric prosthetic hand.

Design and Fabrication of the Receiver Section for INMARSAT-C (INMARSAT-C형 위성통신단말기의 수신단 설계 및 제작)

  • 전중성;김동일;정종혁;배정철
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.3 no.2
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    • pp.339-346
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    • 1999
  • A RF receiver section for INMARSAT-C external mounting unit was designed, fabricated and evaluated. Using a INA-03184, the high gain amplifier consists of matched amplifier type. Active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilization resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver section implemented here show 60 dB in gain, 44.83 dBc in a spurious level. The voltage standing wave ratios(VSWR)of input output port are less than 1.8:1, respectively.

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