• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.393-396
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• 1988

In discharge excited excimer laser, it is hard to say that the analysis of laser operation was well explained until now. But this can be improved by analysis the nonlinear discharge characteristics in the cavity. The nonlinear characteristics can be analysed by solving the nonlinear resistance which depends on electron mobility and number density. We can calculate the electron mobility and number density each other using Boltzmann equation and Kinetics equation. So we calculated the nonlinear resistance and analysed nonlinear discharge characteristics.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.461-463
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• 2000

This paper presents a low temperature excimer-laser-crystallization that produces directionally solidified microstructure in Si thin films. The process involves (1) a complete melting of selected area via irradiation through a patterned mask. and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the superlateral growth(SLG) distance. (3) lateral growth extended over a number of iterative steps. Grains that grow continuously to the vertical direction were demonstrated. We discuss sequential lateral solidification principle, experiment.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1280-1282
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• 1997

The oxynitride films were photo-chemically deposited by ArF(wave length: 193nm) excimer laser CVD used to excite and dissociate gas phases $Si_2H_6$, $N_2O$, and $NH_3$ molecules. We obtained various electrical properties when we varied wafer cleaning procedures consisted of a conventional RCA and a two-dip step[4]. The results show the films have low leakage currents and good TZDB properties. We also analyzed the composition of the oxynitride films which have homogeneous composition throughout the film.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1301-1303
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• 1997

This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.54-55
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• 2003

지금까지 반도체 장비 부품 세정을 위한 기존의 세정 방법중 가장 널리 사용되는 화학적 세정 방법은 다량의 유해 화학물질의 발생 및 후처리 문제, 비용문제, 열악한 작업 환경등과 같은 많은 문제를 노출시키고 있다. 이에 최근의 기술은 습식 세정에서 건식세정 방식으로의 기술 전이가 빠르게 이루어지고 있으며, 특히 레이저 광에 의한 건식 세정 기술은 다양한 오염 물질을 하나의 레이저 광원으로 제거할수 있으며, 기존의 습식 방법과 비교해 환경 친화적 청정 기술이고, 다른 건식 세정 기술인 드라이 아이스 및 플라즈마 세정 방법과 비교해 이동용으로 제작이 가능해 반도체 및 평판 디스플레이 생산공정에서 부품을 분리하지 않고 쉽게 세정을 하기 때문에 반도체 생산 현장에서 in-situ 세정으로 시간적, 경제적 이점이 대단히 크다. (중략)

• Archives of Pharmacal Research
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• v.13 no.2
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• pp.192-197
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• 1990

The microviscosites of the lipid bilayers of liposomal membranes of phospholipids were measured by the intermolecular excimer, formation method employing pyrene as a fluorescence probe, and the effects of n-alkanols and other local anesthetics on the microviscosity were investigated. The results showed that the n-alkanols and the ohter local anesthetics effectively lowered the microviscosity of the lipid bilayer of the dipalmitoyl phosphatidycholine liposomal membrane in proportion to the concentration of the additives. Moreover, there was a fairly good correlation between the ocal anesthetic activities and the microviscosity-lowering activities of these drugs. This results suggests that the nerve blocking activity of local anesthetics might have some relation with their activity fluidizing the lipid bilayer of biomembrane.

• Bulletin of the Korean Chemical Society
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• v.29 no.3
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• pp.567-570
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• 2008

A new pyrene appended diaza-18-crown-6 ether derivative 1 has been prepared and its fluoroionophoric properties toward transition metal ions were investigated. Compound 1 exhibited a high Hg2+-selectivity over other transition metal ions as well as alkali and alkaline earth metal ions in aqueous acetonitrile solution. The ratiometric analysis of the monomer and excimer emissions of pyrene successfully signals the presence of Hg2+ ions. The detection limit for Hg2+ ions was found to be 3.1 ´ 10-6 M in 50% aqueous acetonitrile solution at pH 8.1. Competition experiments also suggest that the compound could be utilized as a selective and sensitive fluorescent chemosensor for the analysis of micromolar Hg2+ ions in physiological and environmental samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.338-338
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• 2011

최근 FPD (Flat Pannel Display) 시장이 커짐에 따라 고효율, 저비용 제작 공정이 화두로 떠오르고 있다. ELA (Excimer Laser Annenling)을 이용한 LTPS (Low Temperature Poly Silicon) 공정은 mobility와 전류 점멸비 등에서 장점을 가지지만, 고비용, 대면적과 short-range에서 uniformity가 어렵다는 단점이 있다. 이를 극복하기 위한 방법으로 dLTA (diode Laser Thermal Annealing) 공정에 대한 연구가 진행되고 있다. 본 연구에서는 Flexible Display을 만들기 위한 방법으로 dLTA 공정을 진행하였다. 이 방법은 PI (Poly imide) 기판 위에 a-Si을 ICP CVD로 증착시킨 후, Diode Laser (980 nm)를 이용한 annealing을 통하여 a-Si이 poly-Si으로 결정화가 되는 것을 확인하였고, 에너지 조사량에 따른 grain boundary와 grain size을 통하여 비교 분석하였다. 실험 결과 ELA 공정을 이용한 것과 버금가는 실험 결과를 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.336-336
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• 2011

AMOLED에 대한 관심이 높아짐에 따라 LTPS (Low Temperature Poly Silicon) TFT에 대한 연구가 활발히 이루어지고 있다. 다결정 실리콘은 단결정 실리콘에 비해 100 cm2/V 이상의 이동도를 보이는 우수한 특성으로 인해 AMOLED 디스플레이에 적합하며 여러 기업에서 LTPS 공정을 이용한 TFT제작을 연구 중이다. LTPS 공정은 현재 ELA (Excimer Laser Annealing) 방식으로 대면적 유리기판에 ELA 방법을 적용함에 있어 설비투자 비용이 지나치게 높아진다는 단점을 가지고 있다. 설비투자 비용의 문제점을 해결하기 위해 Diode Laser을 이용하여 Annealing하는 방법에 대해 연구하였다. 본 연구는 Diode Laser Annealing 방식을 이용하여 poly-Si을 구현하였다. 단결정 실리콘을 제작하기 위해 ICP-CVD장비를 이용하여 150$^{\circ}C$에서 SiH4, He2 혼합, He/SiH4의 flow rate는 20/2[sccm], RF power는 400 W에서 700 W으로 가변, 증착 압력은 25mTorr으로 하였다. 940 nm 파장의 30 W Diode Laser를 8 mm Spot Size로 a-Si에 순간 조사하여 결정화, 그 결과 grain을 형성한 polycrystalline 구조를 확인하였다.

• Journal of Magnetics
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• v.4 no.2
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• pp.39-45
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• 1999

Sandwich structures of$ Nd_2Fe_{14}B/Fe/Nd_2Fe_{14}B $magnetic films have been grown by a KrF excimer laser (λ=248 nm) ablation technique. Magnetic properties were characterized by varying the thickness of hard ($Nd_2Fe_{14}B$) and soft (Fe) magnetic films and the volume fraction as well. In the (x)nm[NdFeB]/(y)nm[Fe]/(x)nm[NdFeB]/(100) Si structure the thickness (x) was varied from 3.6 to 54 nm, and (y) from 15 to 112 nm. At (y) = 15~20 nm where the volume fraction of Fe corresponded to 61~75%, the sandwich structure exhibited an enhanced Mr/Ms and iHc as well from the result of the exchange coupling between the magnetic layers. Experimentally calculated exchange constant$ (A_s) of A_s = 2.5{\times}10^{-10} J/m$ was estimated using the intrinsic coercivity (iHc) of 1.2 kOe at 5 K for the sandwich magnetic trilayers.