Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Sequential Lateral Solidification Process for Fabrication of Crystalline Silicon Thin Film Transistor

단결정 실리콘 TFT 제작을 위한 SLS 공정

  • Lee, Youn-Jae (Department of Electrical Engineering, Korea University) ;
  • Pak, Jung-Ho (Department of Electrical Engineering, Korea University)
  • 이윤재 (고려대학교 전기공학과) ;
  • 박정호 (고려대학교 전기공학과)
  • Published : 2000.11.25
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Abstract

This paper presents a low temperature excimer-laser-crystallization that produces directionally solidified microstructure in Si thin films. The process involves (1) a complete melting of selected area via irradiation through a patterned mask. and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the superlateral growth(SLG) distance. (3) lateral growth extended over a number of iterative steps. Grains that grow continuously to the vertical direction were demonstrated. We discuss sequential lateral solidification principle, experiment.

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