• Journal of Korea Foundry Society
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• v.12 no.4
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• pp.335-345
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• 1992

Aluminum alloy matrix composites reinforced with various amounts of SiC particles have been produced by rheo-compocasting followed by hot extrusion. A relatively uniform distribution of SiC particles in the composites was obtained. The amounts of pore and SiC particles cluster were relatively small in the composites. Particle free zones were observed in the hot extruded composites when the amount of SiC particles was less than 20 vol%. However, the width of particle free zone decreases with the increase of SiC particle content. Eutectic Si phase play an important role for improving bonding between SiC particle and matrix. Tensile and yield strength increased with the increase of SiC particle content. the strenthening effect of SiC particle addition was effective even at relatively high temperature of 573 K.

• Journal of Welding and Joining
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• v.14 no.1
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• pp.47-56
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• 1996

The purpose of this study is to develope an insert metal which can be brazed at lower temperature than the conventionally used insert metal and provide higher strength joint than base metal. In the review of binary phase diagram concerning Ti, Cu and Ni resulted in the discovery of Si having eutectic composition with them. The microstructure and the distribution of elements in reaction zone between CP Ti and insert metal were investigated by Optical Microscopy, SEM/EDX, EPMA, X-RAY. The newly developed insert metal is Ti-15wt%Cu-18wt%Ni-2wt%Si, which can yield the lower brazing temperature(1183K) compared with the conventional Ti-Cu-Ni system insert metal. The joints with this insert metal had tensile strength of 385MPa in the bonding temperature range of 1183K to 1243K.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.203-215
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• 2002

Using eutectic In-Ag and Bi-Sn solder materials, we developed the COG technique having a minimum pitch of 50 ${\mu}{\textrm}{m}$. The maximum temperature in this process is $160^{\circ}C$. We fabricated spherical and uniform solder bumps by controlling the microstructure of Bi-Sn solder bumps. The contact resistances of Bi-Sn solder joints were 19 m$\Omega$ at $80{\mu}{\textrm}{m}$ pitch and 60 m$\Omega$ at $80{\mu}{\textrm}{m}$ pitch, respectively. These values are much lower than the contact resistance of the conventional ACF bonding. The contact resistances of the solder joint are almost the same before and after the underfill process. The contact resistance of the underfilled Bi-Sn solder joint did not change even after reliability test.

• Journal of Powder Materials
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• v.4 no.3
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• pp.196-204
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• 1997

Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.539-544
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• 2002

Titanium and titanium alloy are excellent in corrosion resistance and specific intensity, and also in the biocompatibility. On the other hand, the brazing is bonding method of which productivity and reliability are high, when the complicated and precise structure of the thin plate is constructed. However, though conventional titanium-based brazing filler metal was excellent in bond strength and corrosion resistance, it was disadvantageous that metal structure and mechanical property of the base metal deteriorated, since the brazing temperature (about 1000 C) is considerably high. Authors developed new brazing filler metal which added Zr to Ti-Cu (-Ni) alloy which can be brazed at 900 C or less about 15 years ago. In this paper, the development of more low-melting-point brazing filler metal was tried by the addition of the fourth elements such as Ni, Co, Cr for the Ti-Zr-Cu alloy. As a method for finding the low-melting-point composition, eutectic composition exploration method was used in order to reduce the experiment point. As the result, several kinds of new brazing filler metal such as 37.5Ti-37.5-Zr-25Cu alloy (melting point 825 C) and 30Ti-43Zr-25Cu-2Cr alloy (melting point: 825 C) was developed. Then, the brazing joint showed the characteristics which were almost equal to the base metal from the result of obtaining metallic structure and strength of joint of brazing joint. However, the brazing filler metal composition of the melting point of 820 C or less could not be found. Consequentially, it was clarified that the brazing filler metal developed in this study could be practically sufficiently used from results such as metal structure of brazing joint and tensile test of the joint.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.

• International Journal of Korean Welding Society
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• v.2 no.2
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• pp.14-18
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• 2002

Titanium and titanium alloy are excellent in corrosion resistance and specific intensity, and also in the biocompatibility. On the other hand, the brazing is bonding method of which productivity and reliability are high, when the complicated and precise structure of the thin plate is constructed. However, though conventional titanium-based brazing filler metal was excellent in bond strength and corrosion resistance, it was disadvantageous that metal structure and mechanical property of the base metal deteriorated, since the brazing temperature ( about $1000^{\circ}C$ ) is considerably high. Authors developed new brazing filler metal which added Zr to Ti-Cu (-Ni) alloy which can be brazed at $900^{\circ}C$ or less about 15 years ago. In this paper, the development of more low-melting-point brazing filler metal was tried by the addition of the fourth elements such as Ni, Co, Cr for the Ti-Zr-Cu alloy. As a method for finding the low-melting-point composition, eutectic composition exploration method was used in order to reduce the experiment point. As the result, several kinds of new brazing filler metal such as 37.5Ti-37.5-Zr-25Cu alloy (melting point: $825^{\circ}C$) and 30Ti-43Zr-25Cu-2Cr alloy (melting point: $825^{\circ}C$) was developed. Then, the brazing joint showed the characteristics which were almost equal to the base metal from the result of obtaining metallic structure and strength of joint of brazing joint. However, the brazing filler metal composition of the melting point of $820^{\circ}C$ or less could not be found. Consequentially, it was clarified that the brazing filler metal developed in this study could be practically sufficiently used from results such as metal structure of brazing joint and tensile test of the joint.

• Korean Journal of Optics and Photonics
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• v.24 no.6
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• pp.342-346
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• 2013

We present the thermal analysis result of die bonding for a high power LED package using a metal hybrid silicone adhesive structure. The simulation structure consists of an LED chip, silicone die adhesive, package substrate, silicone-phosphor encapsulation, Al PCB and a heat-sink. As a result, we demonstrate that the heat generated from the chip is easily dissipated through the metal structure. The thermal resistance of the metal hybrid structure was 1.662 K/W. And the thermal resistance of the total package was 5.91 K/W. This result is comparable to the thermal resistance of a eutectic bonded LED package.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.300-305
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• 2018

The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.

• Journal of Korea Foundry Society
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• v.17 no.4
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• pp.371-378
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• 1997

The study for direct synthesis of TaC carbide which was a reaction product of tantalum and carbon in the cast iron was performed. Cast iron which has hypo-eutectic composition was cast bonded in the metal mold with tantalum thin sheet of thickness of $100{\mu}m$. The contents of carbon and silicon of cast iron matrix was controlled to have constant carbon equivalent of 3.6. The chracteristics of microstructure and the formation mechanism of TaC carbide in the interfacial reaction layer in the cast iron/tantalum thin sheet heat treated isothermally at $950^{\circ}C$ for various time were examined. TaC carbide reaction layer was grown to the dendritic morphology in the cast iron/tantalum thin sheet interface by the isothermal heat treatment. The composition of TaC carbide was 48.5 at.% $Ti{\sim}48.6$ at.% C-2.8 at.% Fe. The hardness of reaction layer was MHV $1100{\sim}1200$. The thickness of reaction layer linearly increased with increasing the total content of carbon in the cast iron matrix and isothermal heat treating time. The growth constant for TaC reaction layer was proportional to the log[C] of the matrix. The formation mechanism of TaC reaction layer at the interface of cast iron/tantalum thin sheet was proved to be the interfacial reaction.