• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.721-725
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• 1996

The microfabricated test structures were used in order to evaluate the stress characteristics in films. The test structures were fabricated using surface micromachining technique, including HF vapor phase etching as an effective release method. The fabricated structures were micro strain gauge, cantilever-type vernier gauge and bridge for stress measurement, and cantilever for stress gradient measurement. The strain was measures by observing the deformation of the structures occurred after release etching and the amount of deformation can be detected by micro vernier gauge, which has gauge resolution of 0.2${\mu}{\textrm}{m}$. The detection principles and the degree of precision for the measured strain were also discussed. The characteristics of residual stress in LPCVD polysilicon films were studied using these test structures. The stress gradient due to the stress variation through the film thickness was calculated by measuring the deflection at the cantilever free end.

• 대한소아치과학회지
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• 제35권3호
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• pp.437-445
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• 2008

이 연구의 목적은 유전치 법랑질에서 무소주 법랑질 층이 있는 치경부에서의 적절한 산부식 시간을 알아보고자 함이다. 경희대학교 치과대학병원 소아치과에 내원한 환아에게서 발거한 치아 순면에 우식이 없는 건전한 치아 32개를 대상으로 실험하였다. 발거된 유전치의 치경부 법랑질을 35% 인산으로 실험 1군은 15초, 실험 2군은 30초, 실험 3군은 45초, 실험 4군은 60초간 산부식한 후 부식시간에 따른 법랑질 표면의 양상을 SEM으로 관찰하여 평가하였다. 1. 실험 1군에서는 Type 3가 75% 나타났으며 실험 2군과 3군 모두에서 Type 1이 38%, Type 2가 50%로 나타났다. 2. 실험 2군보다 실험 3군에서 산부식된 양상이 좀더 뚜렷하게 나타났다. 3. 실험 4군에서 Type 1이 25%, Type 2가 75%를 보였고 Type 3는 나타나지 않았다. 4. 실험 4군에서는 다른 실험군에서 보다 좀더 전형적인 산부식 양상을 보였다. 5. 실험군 간의 산부식 시간에 따른 부식 양상의 차이는 통계학적으로 유의한 차이를 보였다(p<0.05). 6. 산부식 시간이 길수록 부착에 유리한 Type 1과 Type 2가 주로 관찰되었으며 Type 3는 드물게 관찰되었다(p<0.05). 유전치에서 무소주 법랑질 층이 주로 존재하는 치경부 측에, 와동의 변연부가 형성될 때에는 산부식 시간을 다소 길게 $45{\sim}60$초 정도 하는 것이 수복물 유지를 향상시킬 것으로 여겨진다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• 통합자연과학논문집
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• 제4권1호
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• pp.11-14
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• 2011

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polymethylmethacrylate (PMMA) to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated PMMA. Optically encoded free-standing DBR PSi dielectric mirrors retain the optical reflectivity. Optical characteristics of free-standing DBR PSi dielectric mirrors are stable and robust for 24 hrs in a pH 12 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.169-169
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• 2011

STT-MRAM (수직자화 자기메모리)는 자화반전 현상을 원리로 구동하는 비휘발성 메모리로 기존의 메모리 장치에 비해 빠른 접근 속도와 높은 저장 밀도를 가지며 영구적인 기록이 가능하다. 이러한 장점들에 더해 적은 소모 전력을 지니므로 기존의 SRAM등의 한계를 극복할 대안으로 각광받고 있으며 차세대 메모리 군의 선두주자로 가장 적합한 후보중 하나이다. STT-MRAM의 건식 식각 방식에 있어 가장 큰 이슈는 소자 구동에 핵심적인 역할을 하는 MTJ(Magnetic Tunnel Junction)의 식각이다. MTJ는 free layer, tunnel barrier, pinned layer 3개의 층으로 구성되어 있으며 양 끝 layer에는 강자성체인 CoFeB가 사용되고 tunnel barrier에는 절연층인 MgO가 사용되고 있다. 이러한 물질들은 기존의 반도체 소자에서는 사용되지 않았던 물질들로 기존 공정에서 사용되던 Cl2 based plasma etching에서는 측벽에 비화발성 반응물과 잔류 Cl2에 의해 부식이 발생하는 문제점이 드러나고 있다. 이러한 문제점을 해결하기 위한 새로운 대안으로 CO/NH3/Ar나 CH4/Ar 같은 새로운 가스 조합을 사용하는 연구가 진행되고 있다. 이러한 연구에 의해 기존의 Cl2 plasma를 이용한 식각에서 나타나는 문제점은 해결이 되었으나 또 다른 문제점들이 보고되고 있다. 본 연구에서는 stack MRAM sample을 사용하여 기존의 사용되는 Cl2/Ar plasma와 대안 gas인 CO/NH3, CH4/Ar plasma에서의 식각을 진행하였으며 실험 조건(gas 비율 변화, Bias power 변화, 식각 시간)에 따른 식각 속도의 변화나 식각 후의 profile에 대하여 관찰하였다. 이에 따라 식각후에 어떠한 차이점이 있는 지를 알아보았으며 CO/NH3나 CH4/Ar plasma에서 식각시 나타나는 문제점에 대하여도 조명해 보았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.48-48
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• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• Restorative Dentistry and Endodontics
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• 제27권3호
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• pp.257-269
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• 2002

Objective : The purpose of this study was to evaluate the resin infiltration into dentin of one-bottle adhesive systems and self-etching primer bonded to Class V cavities using confocal laser scanning microscope(CLSM). Material and Methods : Forty Class V cavities were prepared from freshly extracted caries-free Human teeth. These teeth were divided into two groups based on the presence of cervical abrasion: Group I, cervical abrasion : Group II, wedge-shaped cavity preparation. Resin-dentin interfaces were produced with two one-bottle dentin bonding systems-ONE COAT BOND(OCB; Coltene$^R$) and Syntac$^R$SPrint$^{TM}$(SS; VIVADENT)-, one self-etching priming system-CLEARFIL$^{TM}$ SE BOND (SB : KURARAY)- and one multi-step dentin bonding system-Scotchbond$^{TM}$Multi-Purpose (SBMP, 3M Dental Products)-as control according to manufacturers' instructions. Cavities were restored with Spectrum$^{R}$(Dentsply). Specimens were immersed in saline for 24 hours and sectioned longitudinally with a low-speed diamond disc. The resin-dentin interfaces were microscopically observed using CLSM. The quality of resin-infiltrated dentin layers were evaluated by five dentists using 0~4 scale. Results : Confocal laser scanning microscopal investigations using primer labeled with rhodamine B showed that the penetration of the primer occurred along the cavity margins. Statistical analysis using one-way ANOVA followed by Duncan's Multiple Range test revealed that the primer penetration of the group 2(wedge-shaped cavity preparation) was more effective than group 1(cervical abrasion) and that of the gingival interfaces was more effective than the occlusal interfaces. In the one-bottle dentin bonding systems, the resin penetration score of OCB was compatible to SBMP, but those of SS and self-etching priming system, SB were lower than SBMP.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.1-8
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• 2022

TSV 기술을 포함한 고밀도, 고집적 패키징 기술은 IoT, 6G/5G 통신, HPC (high-performance computing)등 여러 분야에서 중요한 기술로 여겨지고 있다. 2차원에서 고집적화를 달성하는 것은 물리적 한계에 도달하게 되었으며, 따라서 3D 패키징 기술을 위하여 다양한 연구들이 진행되고 있다. 본 고에서는 scallop의 형성 원인과 영향, 매끈한 측벽을 만들기 위한 scallop-free 에칭 기술, TSV 표면의 Cu bonding에 대해서 자세히 조사하였다. 이러한 기술들은 고품질 TSV 형성 및 3D 패키징 기술에 영향을 줄 것으로 예상한다.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.284-288
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• 2014

We present tapered nanostructures fabricated on a selective area of gallium phosphide substrates for advanced optoelectronic device applications. A lithography-free fabrication process was accomplished by dry etching of metal nanoparticles. Thermal dewetting of micro-patterned metal thin films provides etch masks for tapered nanostructures. This simple process also allows the formation of plasmonic surfaces with corrugated shapes. Rigorous coupled-wave analysis calculations provide design guidelines for tapered nanostructures on gallium phosphide substrates.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.