• Title/Summary/Keyword: Etching resistance

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Comparison of characteristics of silver-grid transparent conductive electrodes for display devices according to fabrication method (제조공법에 따른 디스플레이 소자용 silver-grid 투명전극층의 특성 비교)

  • Choi, Byoung Su;Choi, Seok Hwan;Ryu, Jeong Ho;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.2
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    • pp.75-79
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    • 2017
  • Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

THE EFFECT OF SURFACE TREATMENT ON FRACTURE STRENGTH OF DENTAL CERAMICS (도재와 상아질의 표면 처리가 도재의 파절 강도에 미치는 영향)

  • Lee, Shin-Won;Lee, Sun-Hyung;Yang, Jae-Ho;Chung, Hun-Young
    • The Journal of Korean Academy of Prosthodontics
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    • v.37 no.5
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    • pp.658-671
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    • 1999
  • The major influencing factors on the strength of all-ceramic crowns are types of dental ceramics, fabrication techniques, methods of abutment preparation and cementation modes of all-ceramic restorations. Zinc phosphate cement and glass-ionomer cement were used as an early lot-ing media for all-ceramic crowns. Recently many studies have reported that resin cements have more advantages in increasing the fracture strength of restorations comparing with zincphosphate cement and glass-ionomer cement. The purpose of this study is to investigate the effect of etching, silane treatment, sandblasting and dentin bonding agents on fracture strengths of dental ceramics. 40 flat dentin specimens and 40 ceramic discs of 1.5mm thickness and 8mm diameter were fabricated, and divided into 4 groups according to surface treatments. Surface treatments before cementation were as follows Group I : (ceramic) : HF etching - silane treatment - application of bonding resin (dentin) : application of dentin bonding agent Group II : (ceramic) : sandblasting - application of bonding resin (dentin) : application of dentin bonding agent Group III : (ceramic) : application of bonding resin (dentin) : application of dentin bonding agent Group IV : (ceramic) : HF etching - silane treatment - application of bonding resin (dentin) : no dentin bonding procedure Dentin specimens and ceramic discs were cemented with dual cure resin cement, and went through thermocycling. Compressive stress es were loaded on the centers of ceramic discs with Instron test-ing machine, and fracture strengths resistance for catastrophic fracture were measured The results were as follows. 1. The group I showed the highest fracture resistance. The next was group II And group III, IV followed. 2. There was a significant difference in the mean value of fracture strengths between group I and group III (p<0.05), but no significant differences between group I and group II, and group II and group III (p>0.05). 3. There was a significant difference in the mean value of fracture strengths between group I and group IV (p<0.05).

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Wet Etch Process for the Fabrication of Al Electrodes and Al Microstructures in Surface Micromachining (표면 미세가공에서 Al 전극 및 Al 미세 구조물 제작을 위한 습식 식각 공정)

  • Kim, Sung-Un;Paik, Seung-Joon;Lee, Seung-Ki;Cho, Dong-Il
    • Journal of Sensor Science and Technology
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    • v.9 no.3
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    • pp.224-232
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    • 2000
  • Aluminum metal process in surface micromachining enables to fabricate Al electrodes or Al structures, which improve electrical characteristics by reducing contact- and line-resistance or makes the whole process to be simple by using oxide as sacrificial layer. However, it is not possible to use conventional sacrificial layer etching process, because HF solution attacks aluminum as well as sacrificial oxide. The mixed solution of BHF and glycerine as an alternative shows the adequate properties to meet with this end. The exact etching properties, however, are sensitively depends on the geometry of the released structure, because the most etching process of sacrificial layer proceeds to the lateral direction in narrow space. Also, the surface roughness of aluminum affects to the etching characteristics. This paper reports experimental results on the effect of microstructure and surface roughness of aluminum to the etching properties. Considering these effects, we propose the optimized etching condition, which can be used practically for the fabrication of aluminum electrodes and microstructures by using standard surface micromachining process without modification or additional process.

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Oscillatory Josephson-Vortex Resistance in Stacks of $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$ Intrinsic Josephson Junctions

  • Choi Jae-Hyun;Bae Myung-Ho;Lee Hu-Jong;Kim Sang-Jae
    • Progress in Superconductivity
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    • v.7 no.1
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    • pp.17-21
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    • 2005
  • We report the oscillation of the Josephson vortex-flow resistance in the rectangular stacks of $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$(Bi-2212) intrinsic Josephson junctions (IJJs). Apiece of Bi-2212 single crystal containing a few tens of IJJs was sandwiched between two gold electrodes and fabricated into a rectangular shape with the typical lateral size of about $1.5{\times}10\;{\mu}m^2$, using e-beam lithography and focused ion-beam etching techniques. In a tesla-range magnetic field applied in parallel with the junction planes, the oscillation of the Josephson vortex flow resistance was observed at temperatures near 60 K. The oscillation results from the interplay between the triangular Josephson vortex lattice and the potential barrier at the boundary of a single crystal. The oscillatory magnetoresistance for different bias currents, external magnetic fields, and the tilt-angles provides useful information on the dynamics of the coupled Josephson-vortex lattice system.

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Plasma Resistance Evaluation and Characteristics of Yttria Ceramics Sintered by Using Calcination Yttria (하소이트리아 소결체의 특성과 플라즈마저항성 평가)

  • Choi, Jinsam;Nakayama, Tadachika;Bae, Won Tae
    • Journal of the Korean Ceramic Society
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    • v.50 no.5
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    • pp.348-352
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    • 2013
  • The evaluation of plasma resistance and the characteristics of yttria ceramics fabricated by calcination yttria as a starting material without dopants under an oxidation atmosphere was investigated. Regardless of the starting materials, as-received, and calcined yttria powder, XRD patterns showed that all samples have $Y_2O_3$ phase. The three cycling process inhibited a large grain, which occurs frequently during the yttria sintering, and a high density ceramic with a homogeneous grain size was obtained. The grain size of the sintered ceramic was affected by the starting powders. The smaller the grain size, the larger were the Young's modulus and KIC. Compared to $Al_2O_3$ and $ZrO_2$ ceramics, yttria ceramics showed a 3 times larger plasma resistance and a 1.4~2.2 times lower weight loss during the plasma etching test, respectively.

Fabrication of Laser Diodes using Beam-Lead and its thermal characteristics (Beam-Lead를 이용한 Laser Diode의 제작과 열저항 특성)

  • 조성대
    • Proceedings of the Optical Society of Korea Conference
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    • 1990.02a
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    • pp.69-72
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    • 1990
  • For the effective heat transfering in Lser Diodes, Beam-Lead structure were introduced which is applicable to hybrid Optoelectronic Integrated Circuits. A 5-layer planar structure Laser Diode is fabricated and Beam-Lead is made by Au plating. And carrier was made by etching Si substrate and LD was mounted on a carrier. The thermal resistance was measured and we could certain that Beam-Lead structure behaves well as a heat sink.

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Dependence of Electrical Resistance in Porous Silicon Layer for Detecting Organic Vapors (유기 가스 검지를 위한 다공질 실리콘층의 전기 저항 의존성)

  • Park, Kwang-Yeol;Kim, Seong-Jeen;Lee, Sang-Hoon;Choi, Bok-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.792-796
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    • 2002
  • In this work, porous silicon(PS) layer is used as a sensing material to detect organic gases. To do this, PS sensors with membrane structure are fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon, and PS layer formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured against ethanol (called alcohol), methanol and acetone gases evaporated from 0.1 to 0.5% solution concentrations at $36^{\circ}C$. As the result, all curves showed rectifying behavior due to a diode structure between Si and PS, and the conductance of sensor devices increased largely with the organic solution concentration at high voltage of 5V.

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Analysis of Electrical Characteristics of High-Density Trench Gate Power DMOSFET Utilizing Self-Align and Hydrogen Annealing Techniques (자기 정열과 수소 어닐링 기술을 이용한 고밀도 트랜치 게이트 전력 DMOSFET의 전기적 특성 분석)

  • 박훈수;김종대;김상기;이영기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.10
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    • pp.853-858
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    • 2003
  • In this study, a new simplified technology for fabricating high density trench gate DMOSFETs using only three mask layers and TEOS/nitride spacer is proposed. Due to the reduced masking steps and self-aligned process, this technique can afford to fabricate DMOSFETs with high cell density up to 100 Mcell/inch$^2$ and cost-effective production. The resulting unit cell pitch was 2.3∼2.4${\mu}$m. The fabricated device exhibited a excellent specific on-resistance characteristic of 0.36m$\Omega$. cm$^2$ with a breakdown voltage of 42V. Moreover, time to breakdown of gate oxide was remarkably increased by the hydrogen annealing after trench etching.

Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

  • Kim, Young-Min;Yoon, Ho-Cheol;Lee, Jong-Hyun
    • ETRI Journal
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    • v.27 no.4
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    • pp.433-438
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    • 2005
  • We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of $5 {\mu}m$, and a width of $50{\mu}$ and a length of $800 {\mu}m$. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was $170 {\mu}m$, and an annealing process was performed for 20 min at $500^{\circ}C$. The contact resistance of the newly fabricated probe card was less than $2{\Omega}$, and its lifetime was more than 20,000 turns.

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Development of Micro-machined Heat Flux Sensor by using MEMS technology (MEMS를 이용한 미세 열유속센서의 개발)

  • Yang, Hoon-Cheul;Song, Chul-Hwa;Kim, Moo-Hwan
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1364-1369
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    • 2004
  • New method for the design, fabrication, and calibration of micro-machined heat flux sensor has been developed. Two types of micro-machined heat flux sensor having different thicknesses of the thermal-resistance layer are fabricated using the MEMS technique. Photo-resist patterning using a chrome mask, bulk-etching and copper-nickel sputtering using a shadow mask are applied to make heat flux sensors, which are calibrated in the convection-type heat flux calibration facility. The sensitivity of the device varies with thermal-resistance layer, and hence can be used to measure the heat flux in heat-transfer phenomena.

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