• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.137-140
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• 2004

We treated $O_2$ plasma on ITO thin film using RIE (Reactive Ion Etching) system, and analyzed the ingredient of ITO thin film according to change of processing conditions. The ingredient analysis of ITO thin film was used by EDS (Energy Dispersive Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) to compare and analyze the ingredient of bulk and surface. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM (Atomic Force Microscope). Finally, we fabricated OLEDs (Organic Light-Emitting Diodes) device using substrate that was treated optimum ITO surface. The result of the study for electrical and optical properties using I V L System (Flat Panel Display Analysis System), we confirmed that electrical properties (I-V) and optical properties (L-V) were improved.

• Journal of Welding and Joining
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• v.22 no.4
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• pp.43-49
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• 2004

Conventional method for electrode force application in resistance spot welding(RSW) processes is to use pneumatic cylinder. However, due to its inherent problems in pneumatic power system such as compressibility of air and poor transient response characteristics, new electrode force system with servo control are recently introduced in RSW machine. This machine is called “servogun”. The purpose of this study is to evaluate performance of servogun in case of spot welding of aluminum alloy. Aluminum alloy(A5052) sheets are spot welded using pneumatic gun and servogun. Both results are compared by means of macro cross-section etching test and tensile shear strength test. Numerous previous research have reported nugget with many voids and cracks are not uncommon defects in spot welds with aluminum alloy. The experimental results show similar defects in case of pneumatic gun. In contrast, use of servogun considerably reduced generation of voids and cracks. In case of step-wise increased forging force at the end of welding cycle with servogun, crack-free and void-free nuggets have been observed. The performance of servogun has been also verified by series of tensile shear test. Higher strength values have been achieved with servogun in comparison to that of pneumatic gun.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.46-52
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• 2003

In this paper, we fabricated PRT(platinum resistance thermometers) with the trimming technology using high fine laser system. U. V.(wavelength： 355nm) laser was mainly used for adjusting Pt thin films resistors to 100Ω at 0$^{\circ}C$. Internationally, the accepted A-class tolerance of temperature sensor is ${\pm}$0.06Ω at 0$^{\circ}C$. according to DIN EN 60751. The width of trimmed lines was about 10$\mu\textrm{m}$ and the best trimming conditions of Pt thin films were power : 37mW, frequency : 200Hz and bite size：1.5$\mu\textrm{m}$. And 96 resistors, fabricated by photolithography and etching process, have 79∼90Ω and 91∼102Ω as the proportion of 45.7% and 57.3%, respectively. As result of sitting Pt thin films resistors to the target value(109.73Ω at 25$^{\circ}C$), 82.3% of all resistors had the tolerance within ${\pm}$0.03Ω and the others(17.7％) were within ${\pm}$0.06Ω of A-class tolerance. The PRTs which wore fabricated in this research had excellent characteristics as follows； high accuracy, international standard TCR(temperature coefficient of resistance) value, long-term stability, wide temperature range, good linearity and repeatability, rapid response time, etc.

• Transactions of the Korean hydrogen and new energy society
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• v.23 no.4
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• pp.353-363
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• 2012

The relationship between the diffusivity and electrochemical characteristics of lithium secondary battery with the modified Si anode material prepared in HF/$AgNO_3$ solution was investigated. The crystallographic structure and images of the modified porous Si and modified Si/Cu was examined using the X-ray diffraction, BET and SEM. To examine the effect of metal composite and pore size distribution according to chemical etching on the electrochemical characterization, the electrodes for half cells were prepared with the modified Si, modified Si/Cu, and modified Si/Cu annealed with $600^{\circ}C$. Our results showed that the chemical diffusivity of lithium ions was related to structure and resistance of Si/Cu composite anode material. The lithium diffusivity in modified silicon compound calculated from the CV was at the range of $1{\times}10^{-12}$ to $9{\times}10^{-16}cm^2/s$. The effects of modified silicon structure and resistance on the cycling efficiency were significant.

• Design & Manufacturing
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• v.13 no.1
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• pp.13-18
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• 2019

The size and prospects of the domestic semiconductor equipment market are increasing every year. In the case of various parts used inside semiconductor equipments, high durability such as high strength and abrasion resistance is demanded. Particularly, the gases used in semiconductor production processes are toxic. In order to prevent such toxic gas leakage, a precision processing technique and a surface treatment technique for preventing corrosion are required. Electro-polishing is an electro-chemical method of polishing a metal surface to make it smooth and polished. Electro-polishing is mainly used in the finishing process of metal surface. Unlike mechanical polishing, electro-polishing is used in many fields, such as fine chemical etching equipment, since no damaged layer or burr, fine polishing groove and particles are generated. However, in order to withstand the gas used in the semiconductor equipment, the parts must have high corrosion resistance. However, the surface hardness generally become lowered through electro-polishing. Therefore, in this study, surface hardness were experimentally observed before and after electro-polishing. Then, a method of improving hardness by preparing a nitrided layer by plasma ion nitriding treatment.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.105-110
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• 2024

Scanning probe microscopy (SPM) has become an indispensable tool in efforts to develop the next generation of nanoelectronic devices, given its achievable nanometer spatial resolution and highly versatile ability to measure a variety of properties. Recently a new scanning probe microscope was developed to overcome the tip degradation problem of the classic SPM. The main advantage of this new method, called Reverse tip sample (RTS) SPM, is that a single tip can be replaced by a chip containing hundreds to thousands of tips. Generally for use in RTS SPM, pyramid-shaped diamond tips are made by molding on a silicon substrate. Combining RTS SPM with Scanning spreading resistance microscopy (SSRM) using the diamond tip offers the potential to perform 3D profiling of semiconductor materials. However, damage frequently occurs to the completed tips because of the complex manufacturing process. In this work, we design, fabricate, and evaluate an RTS tip chip prototype to simplify the complex manufacturing process, prevent tip damage, and shorten manufacturing time.

• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.149-154
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• 2004

This paper presents a silicon probe tip for vertical probe card application. The silicon probe tip was fabricated using MEMS technology such as porous silicon micromachining and deep- RIE (reactive ion etching). The thickness of the silicon epitaxial layers was 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$, respectively. The width and length were 40 ${\mu}{\textrm}{m}$ and 600 ${\mu}{\textrm}{m}$, respectively. The probe structure was a multilayered structure and was composed of Au/Ni-Cr/Si$_3$N$_4$/n-epi layers. The height of the curled probe tip was measured as a function of the annealing temperature and time. Resistance characteristics of the probe tip were measured using a touchdown test.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.123-126
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• 2002

Samples of Nb/Al-Al$O_{x}$/Nb tunnel junction with the size of 50$\mu$m $\times$ 50$\mu$m were fabricated by employing self-aligning and reactive ion etching technique. In the samples with high-quality, $V_{m}$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density $J_{c}$ = 500 A/$cm^{2}$ and $V_{g}$ value (the gap voltage) was 2.8 mV. In the higher $J_{c}$, voltage fluctuation in the current rising at the gap voltage was observed. The $V_{m}$ and $J_{c}$ value were 8 mV and 900 A/$cm^{2}$, respectively.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.96-99
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• 2000

In order to improve the rate capability of lithium manganese oxide thin film, we prepared the patterned cathode films by conventional lithography and etching techniques. From the investigation of discharge current density effects on discharge curves of cathode films, the rate capability was greatly improved due to increase of lithium intercalation kinetics fur charge transfer.