• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.184-189
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• 2015

We report a simple way to enhance the size gradient of an imprinted nanopattern through oxygen plasma etching under a nonuniform magnetic field. A sample substrate was placed next to a magnet, and then a nonuniform magnetic field condition was formed around the sample. Using oxygen plasma etching, a line pattern having an initial width of 273 nm was gradually modified from 248 nm at one end to 182 nm at the other end. Controlling the arrangement of the magnet and sample, we could induce a triangular shape size gradient. We verified that the gradually modified nanopatterns we produced are applicable to continual optical property control, showing a possibility to be utilized for optical components such as gratings and polarizers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• Laser Solutions
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• v.12 no.3
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• pp.1-6
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• 2009

This paper describes the method for the fabrication of micro dot array on a plastic mold steel using DPSS (diode pumped solid-states) UV laser and wet etching process. We suggest the process of the ablation of a photoresist (PR) coated on plastic mold steel and wet etching process using solutions of various concentrations of $FeCl_3$, $HNO_3$ in water as etchant. This method makes it possible to fabricate metallic roller mold because the microstructures are directly fabricated on the metal surface. In the range of operating conditions studied, $17\;{\mu}J$ laser pulse energy and 50 ms laser exposure time, an etchant containing 40wt% $FeCl_3$, 5wt% $HNO_3$ and etch time for 45 s gave the $10\;{\mu}m$ of micro dot pattern on plastic mold steel.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.151-156
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• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.9 s.186
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• pp.164-173
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• 2006

The cooling capacity of a micro-heat pipe is mainly governed by the magnitude of capillary pressure induced in the wick structure. For microchannel wicks, a higher capillary pressure is achievable for narrower and deeper channels. In this study, a metallic micro-heat pipe adopting high-aspect-ratio microchannel wicks is fabricated. Micromachining of high-aspect-ratio microchannels is done using the laser-induced wet etching technique in which a focused laser beam irradiates the workpiece placed in a liquid etchant along a desired channel pattern. Because of the direct writing characteristic of the laser-induced wet etching method, no mask is necessary and the fabrication procedure is relatively simple. Deep microchannels of an aspect ratio close to 10 can be readily fabricated with little heat damage of the workpiece. The laser-induced wet etching process for the fabrication of high-aspect-ratio microchannels in 0.5mm thick stainless steel foil is presented in detail. The shape and size variations of microchannels with respect to the process variables, such as laser power, scanning speed, number of scans, and etchant concentration are closely examined. Also, the fabrication of a flat micro-heat pipe based on the high-aspect-ratio microchannels is demonstrated.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.5
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• pp.97-103
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• 2007

A novel selective metallization process to fabricate the fine conductive line based on inkjet printing has been investigated. Recently, Inkjet printing has been widely used in flat panel display, electronic circuits, biochips and bioMEMS because direct inkjet printing is an alternative and cost-effective technology for patterning and fabricating objects directly from design without masks. The photosensitive etching resist used in this process is an organic polymer which becomes solidified when exposed to ultraviolet lights and has high viscosity at ambient temperature. A piezoelectric-driven inkjet printhead is used to dispense 20-30 ${\mu}m$ diameter droplets onto the copper substrate to prevent subsequent etching. Repeatability of circuitry fabrication is closely related to the formation of steady droplets, adhesion between etching resist and copper substrate. Therefore, the ability to form small and stable droplets and surface topography of the copper surface and chemical attack must be taken into consideration for fine and precise patterns. In this study, factors affecting the pattern formation such as adhesion strength, etching mechanism, UV curing have been investigated. As a result, microscale copper patterns with tens of urn high have been fabricated.

• Restorative Dentistry and Endodontics
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• v.6 no.1
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• pp.37-50
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• 1980

Scanning Electron Microscopic (SEM) examination on the labial surface of 91 permanent upper incisors were made after etching procedure with phosphoric acid, sulfuric acid, nitric acid, hydro chloric acid, oxalic acid, formic acid, citric acid and zinc phosphate liquid for 2 minutes. Following results were obtained. 1. In the surfaces etched by 10%. 50% phosphoric acid, 50% sulfuric acid, 10%. 30% nitric acid, 10%. 50% oxalic acid, 10%. 30%. 50% formic acid, 30%. 50% citric acid and zinc phosphate liquid, there appeared to be a preferential removal of prism cores, but in the surfaces etched by 10% phosphoric acid, 50% nitric acid, 10%. 30% hydrochloric acid and 30% oxalic acid, the prism peripheries were removed preferentially. 2. According to Silverstone classification on enamel etching pattern the surface treated by zinc phosphate liquid, 30. 50% citric acid, 10%. 30%. 50% formic acid, 10%. 50% oxalic acid, 10%. 30% nitric acid, 50% sulfuric acid and 10%. 50%. phosphoric acid showed Type 1, and etched by 30% oxalic acid, 10%. 30% hydrochloric acid, 50% nitric acid and 10% phosphoric acid showed Type II. Etching of prism cores was by far the most common occurence. The changes produced could be related to intrinsic differences in histology and / or solubility of enamel.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.19-24
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• 2021

As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.1
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• pp.143-152
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• 2003

The aims of the present study was to observe resin tag of the resin/enamel, dentin interface produced by self-etching adhesive systems and evaluate effect of additional acid etching on resin tag formation. Three self-etching primer(SE bond, AQ bond and L Pop) and an one bottle adhesive(Single bond) were used. Flat occlusal enamel and dentin disks were obtained from extracted human molars. A total of 20 surfaces were collected and divided into four groups of 5 samples. One-half of each specimen in each group was etched with 35% phosphoric acid prior to the application of each adhesive system, with the second half being kept unetched. Subsequently, resin composite was placed and polymerized. The samples were sliced and immersed into HCl and NaOCl solutions, followed by drying and sputter coating for examination with a SEM. The results were as follows; 1. Additional etching side of dentin displayed longer and thicker resin tag than unetched side in all self-etching adhesive groups. 2. In enamel, additional etching side displayed deeper and more distinct etching pattern than unetched side except L Pop. There is no difference between etched and unetched enamel in L Pop. The results obtained suggest the self-etching adhesive did not etch enamel and penetrate into dentinal tubule as deeply as did additional etching. Further research should include the evaluation of the relationship of boding strength, microleakage and resin tag morphology.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.