• Current Applied Physics
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• v.18 no.12
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• pp.1571-1576
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• 2018

Recent study shows that the main reason for limiting CZTS device performance lies in the low open circuit voltage, and crucial factor that could affect the $V_{oc}$ is secondary phases like ZnS existing in absorber layer and its interfaces. In this work, the $Cu_2ZnSnS_4$ thin film solar cells were prepared by sputtering CuSn and CuZn alloy targets. Through tuning the Zn/Sn ratios of the CZTS thin films, the crystal structure, morphology, chemical composition and phase purity of CZTS thin films were characterized by X-Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Raman spectroscopy. The statistics data show that the CZTS solar cell with a ratio of Zn/Sn = 1.2 have the best power convention efficiency of 5.07%. After HCl etching process, the CZTS thin film solar cell with the highest efficiency 5.41% was obtained, which demonstrated that CZTS film solar cells with high efficiency could be developed by sputtering CuSn and CuZn alloy targets.

• Tribology and Lubricants
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• v.39 no.5
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• pp.197-202
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• 2023

Recently, research on experimental and analytical techniques utilizing microfluidic devices has been pursued. For example, lab-on-a-chip devices that integrate micro-devices onto a single chip for processing small sample quantities have gained significant attention. However, during sample preparation, unnecessary gases can be introduced into the internal channels, thus, impeding device flow and compromising specific function efficiency, including that of analysis and separation. Several methods have been proposed to mitigate this issue, however, many involve cumbersome procedures or suffer from complexities owing to intricate structures. Recently, some approaches have been introduced that utilize hydrophobic device structures to remove gases within channels. In such cases, the permeability of gases passing through the structure becomes a crucial performance factor. In this study, a method involving the deposition and sintering of diluted Ag-ink onto a silicon wafer surface is presented. This is followed by unstructured nano-pattern creation using a Metal Assisted Chemical Etching (MACE) process, which yields a nanostructured surface with unstructured pillar shapes. Subsequently, gas permeability in the spaces formed by these surface structures is investigated. This is achieved by experiments conducted to incorporate a pressure chamber and measure gas permeability. Trends are subsequently analyzed by comparing the results with existing theories. Finally, it can be confirmed that the significance of this study primarily lies in its capability to effectively evaluate gas permeability through unstructured pillar-like nanostructures, thus, providing quantitative values for the appropriate driving pressure and expected gas removal time in practical device operation.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1305-1308
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• 2003

A new technique is presented to construct a predictive model of plasma etch process. This was accomplished by combining a backpropagation neural network (BPNN) and a genetic algorithm (GA). The predictive model constructed in this way is referred to as a GA-BPNN. The GA played a role of controlling training factors simultaneously. The training factors to be optimized are the hidden neuron, training tolerance, initial weight magnitude, and two gradients of bipolar sigmoid and linear functions. Each etch response was optimized separately. The proposed scheme was evaluated with a set of experimental plasma etch data. The etch process was characterized by a $2^3$ full factorial experiment. The etch responses modeled are aluminum (A1) etch rate, silica profile angle, A1 selectivity, and dc bias. Additional test data were prepared to evaluate model appropriateness. The GA-BPNN was compared to a conventional BPNN. Compared to the BPNN, the GA-BPNN demonstrated an improvement of more than 20% for all etch responses. The improvement was significant in the case of A1 etch rate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1-5
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• 2005

The grinding process is replacing lapping and etching process because significant cost savings and performance improvemnets is possible. This paper presents the experimental results of wafer grinding. A three-variable two-level full factorial design was employed to reveal the main effects as well as the interaction effects of three process parameters such as wheel rotational speed, chuck table rotational speed and feed rate on TTV and STIR of wafers. The chuck table rotaional speed was a significant factor and the interaction effects was significant. The ground wafer shape was affected by surface shape of chuck table.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.809-812
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• 1992

Charateristics of the ECR etch were Investigated about $MoSi_2$ layer which is widely used for the capping layer and barrier layer in VLSI metallization. The etch rate was evaluated according to gas ratio of $SF_6/BCl_3$, $N_2$ flow rate, RF power and chamber pressure. The chamber pressure, the most important factor, represented the maximum etch rate at about the pressure of 10 mTorr.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.365-370
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• 2001

We have proposed and fabricated a new poly-Si TFT employing air-cavities at the edges of gate oxide in order to reduce the vertical electric field induced near the drain due to low dielectric constant of air. Air-cavity has been successfully fabricated by employing the wet etching of gate oxide and APCVD (Atmospheric pressure chemical vapor deposition) oxide deposition. Our experimental results show that the leakage current of the proposed TFT is considerably reduced by the factor of 10 and threshold voltage shift under high gate bias is also reduced because the carrier injection into gate insulator over the drain depletion region is suppressed.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.281-283
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• 2005

Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.

• Journal of the Optical Society of Korea
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• v.20 no.2
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• pp.291-299
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• 2016

We have investigated the ultimate limits of nonuniform grating couplers (NGCs) for optimized fiber coupling to silicon waveguides, compared to uniform grating couplers (UGCs). Simple grating coupler schemes, which can be fabricated in etching steps of the conventional complementary metal-oxide semiconductor (CMOS) process on silicon-on-insulator (SOI) wafers without forming any additional overlay structure, have been simulated numerically and demonstrated experimentally. Optimum values of the grating period, fill factor, and groove number for ultimate coupling efficiency of the NGCs are determined from finite-difference time-domain (FDTD) simulation, and confirmed with experimentally demonstrated devices by comparison to those for the UGCs. Our simulated results indicate that maximum coupling efficiency of NGCs is possible when the minimum pattern size is below 50 nm, but the experimental value for the maximum coupling efficiency is limited by the attainable fabrication tolerance in a practical device process.

• Journal of Institute of Control, Robotics and Systems
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• v.13 no.4
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• pp.315-319
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• 2007

A technique to model plasma processes was presented. This was accomplished by combining the backpropagation neural network (BPNN) and genetic algorithm (GA). Particularly, the GA was used to optimize five training factor effects by balancing the training and test errors. The technique was evaluated with the plasma etch data, characterized by a face-centered Box Wilson experiment. The etch outputs modeled include Al etch rate, AI selectivity, DC bias, and silica profile angle. Scanning electron microscope was used to quantify the etch outputs. For comparison, the etch outputs were modeled in a conventional fashion. GABPNN models demonstrated a considerable improvement of more than 25% for all etch outputs only but he DC bias. About 40% improvements were even achieved for the profile angle and AI etch rate. The improvements demonstrate that the presented technique is effective to improving BPNN prediction performance.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1498-1499
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• 1998

Thin film inductors of 10 mm ${\times}$ 10 mm with spiral pattern of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their impedence characteristics and annealing after effects were investigated. After magnetic annealing, the impedence characteristics of the inductors were improved at comparatively low frequencies, but the tendencies of it for thr frequency changes were almost same. These improvement was caused by the annihilation of the internal stresses of films, Uniaxial field annealed thin film inductor had an inductance of 1000 nH, resistance of 6 $\Omega$, and quality factor of 1 at 2 MHz.