• Journal of Integrative Natural Science
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• v.5 no.4
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• pp.211-215
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• 2012

Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.8
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• pp.1236-1241
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• 2017

We deposited Al-doped ZnO (ZnO:Al) thin films on glass substrates ($200mm{\times}200mm$) by using in-line magnetron sputtering system. Effects of various deposition parameters such as working pressure, deposition power and substrate temperature on optoelectronic characteristics including surface-texture etching profiles were carefully investigated in this study. We found that relatively low working pressure and high deposition power offered to obtain enhanced conductivity and optical transmittance. Haze properties showed similar trend with the transmittance. Furthermore, surface-texture etching study exhibited good morphologies when the films were deposited at $200-300^{\circ}C$. On the basis of these optimizations, we could find the deposition region that produces highly transparent and conductive properties including efficient light scattering capability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.1001-1003
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• 1998

In this paper, $Ar^+$ ion laser etching process of single/poly crystalline silicon with $CCl_{2}F_{2}$ gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile etched in repeating scanning cycle. From the etching of $2.6{\mu}m$ thick polycrystalline Si deposited on insulator, trench with flat bottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.

• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.170-175
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• 2013

Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.77-80
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• 2002

In this paper, InP-based HBTs have been optimally designed by numerical simulation and fabricated by the self-aligned process. The structure of HBT was designed in terms of the current gain*f$_{max}$ for the base and f$_{T}$*f$_{max}$ for the collector. The designed structure produced the current gain of about 50 and the cutoff frequency and the maximum oscillation frequency of 87GHz and 2940Hz respectively. In addition, we present a study of the vertical and lateral etching of InP with the mask sides parallel to the principal crystallographic axes, [0101 and (001). This etching characteristics arc used to fabricate self-aligned HBT structures with reduced parasitic effects.s.s.s.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.77-79
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• 1992

We propose a self-aligned and double recessed technique for GaAs power MESFETs application. The gate length and the wide recess width are defined by a selective removal of the SiN layer using reactive ion etching(RIE) while the depth of the channel is defined by chemical etching of GaAs layers. The threshold voltages and the saturation drain voltage could be sucessfully controlled using this technique. The lateral-etched distance increases with the dry etching time and the source-drain breakdown voltage of MESFET increases up to about 30V at a pinch-off condition. The electrical characteristics of a MESFET with a gate length of 2 x10S0-6Tm and a source-gate spacing of 33 x10S0-6Tm show maximum transconductance of 120 mS/mm and saturation drain current density of 170-190mA/mm at a gate voltage of 0.8V.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.149-152
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• 1999

This paper represents the characteristic analyses for the etching in SF6 plasma and the plasma itself, based on the specific knowledges on the discharge mechanism of SF6 plasma which is widely used for the applications of dry etching, using Radio Frequency Inductively Coupled Plasma (RFICP) by measuring electron density, electron temperature then observing their relationship to find the effect of discharge mechanism of SF6 plasma to the etching in contrast to the existing method of finding optimal discharge condition by heuristic.

• Progress in Superconductivity
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• v.3 no.2
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• pp.168-171
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• 2002

We have demonstrated ramp-edge Josephson junctions using high temperature superconductors without depositing artificial barriers. We fabricated a surface barrier formed naturally during an ion beam etching process and the annealing under the oxygen atmosphere. The experimental results imply that the barrier natures such as the resistivity are varied by the annealing conditions and the ion milling conditions including the beam voltages. Thus, the ann eating and etching conditions should be optimized to obtain excellent junction properties. In optimizing the fabricating factors, the interface-controlled junctions showed resistively shunted junctions like current-voltage characteristics and an excellent uniformity. These junctions exhibited a spread ($1\sigma$) of $I_{c}$ is 10% fur chips containing 7 junctions at 50K.K.

• Laser Solutions
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• v.14 no.1
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• pp.25-29
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• 2011

Micromachining of photosensitive glass by UV exposure, heat treatment, and etching processes is reported. Like photoresist, the photosensitive glass is also classified into positive and negative types by development characteristics. For the positive type, the exposed area is crystallized and etched away during the etching process in HF solution, whereas the unexposed area is crystallized and etched away for the negative type. The crystallized area of the photosensitive glass has an etch rate approximately 30~100 times faster than that of the amorphous area so that it becomes possible to fabricate microstructures in the glass. Based on the unique properties of glass such as high optical transparency, electrical insulation, and chemical/thermal stability, the glass micromachining technique introduced in this work could be widely applied to various devices in the fields of electronics, bio engineering, nanoelectonics and so on.