• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.10
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• pp.3113-3125
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• 1996

The objective of this study is to develop novel method named mechanical and chemical machining technique, which is capable of producing three dimensional patterns of few micrometers in dimension on a silicon wafer without the use of a mask. The strategy is to impart mechanical energy along the path of the pattern to be fabricated on a single crystal silicon by way on introdusing frictional interaction under controlled conditions. Then, the surface is preferentially etched to reveal the areas that have been mechanically energized. Upon completion of the etching process, the three dimensional pattern is produced on the silicon surface. Experiments have been conducted to identify the optimal tool material, geometery, as well as fabrication condition. The new technique introduced in this paper is significantly simpler than the conventional method which require sophisticated equipment and much time.

• Journal of the korean academy of Pediatric Dentistry
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• v.11 no.1
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• pp.57-74
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• 1984

The purpose of this descriptive in vitro study were to evaluate the enamel-resin interface of the preventive resin restoration with regard to etching patterns and resin-tag morphology by means of scanning electron microscope. The results were as follows; 1. Three basic etching patterns were appeared simultaneously in a same microscopic section, in concentration between 20-50% phosphoric acid. 2. In 35% orthorhosphoric acid group etched for 60 second, the etching pattern was most prominent and demonstrate closely interdigitated with enamel-resin interface without the evidence of microspace, and the resin tags were longest ranged from 10-15 um in length. 3. This pattern of interface could reduce the incidence of marginal leakage and 2ndary caries formation. 4, The preventive resin restoration could serve as sealing a questionable occlusal surface.

• Journal of the korean academy of Pediatric Dentistry
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• v.34 no.1
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• pp.106-121
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• 2007

The purpose of this study was to examine the effects of suggested etching method on the performance of pits and fissures sealant. In the first part, seventy extracted sound human permanent third molars and premolars were used. The teeth were randomly divided and performed in three different groups as follows : conventional etching, enameloplasty, and testing group. Non-pumicing, dye-guidance vigorous brushing-start etching technique was applied on the occlusal of testing group. Then the pit and fissure sealant was applied on all of the specimens. After the thermocycling and immersing in 1% methylene blue, the resin embedded sections were made. The microleakage data on the section were then recorded under the stereoscope and statistic analysis was done. Additional experiments were also performed : direct fissure surface etched pattern experiment, replica study, and micro-shear bond strength testing observation. The second part included two groups. A paired study was designed to evaluate the influence the environment has on the performance of the sealant. After etching, half of each occlusal surface received one of the two following treatments in succession: sealing in laboratory and intraoral condition (group 1), sealing in intraoral condition with and without a single-bonding agent (group 2). The results of present study can be summarized as follows: - The microleakage of testing group was significant different with conventional method (P<.05) and was not different with the enameloplasty group (P>.05). - The quality and quantity of etched enamel were improved. - Microshear bond strength of testing group was higher than control group (p<.05). - The environmental condition was influenced on the performance of the sealant. The testing etching method modified the capacity of the etching agent to penetrate into the pits and fissures, and simultaneous enhance their efficiency in vitro condition.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.6
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• pp.640-645
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• 2020

To produce an input device stably using the transparent electromagnetic pattern of an electromagnetic induction method, pattern inspection is required in advance in the production process. Various methods of inspecting the capacitive pattern for hand-touch have been proposed, but it is difficult to find the related technical data for the pattern inspection method of the transparent electromagnetic induction method. In this study, to develop an inspection system for a fused electromagnetic resonance pen sensor with a copper-etched metal mesh pattern, an inspection algorithm and method for measuring the antenna impedance inside the sensor was proposed by measuring only the exposed FPCB connector. The proposed method was configured as a control board consisting of a microprocessor that forms a loop between specific channels according to the command of a computer, a computer-controlled by the Windows program, an LCR meter measuring the impedance between specific channels, and transmitting the measurement results back to the computer. An evaluation of the proposed system and measurements of nine specimens showed that it could detect the defects of the sensor used in the actual product.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.116-121
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• 2006

Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

• Transactions of Materials Processing
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• v.12 no.7
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• pp.640-646
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• 2003

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as potential application to fabricate the surface nanostructures because of its operational versatility and simplicity. The objective of the work is to suggest new mastless pattern fabrication technique using the combination of machining by nanoindenter and KOH wet etching. The scratch option of the nanoindenter is a very promising method for obtaining nanometer scale features on a large size specimen because it has a very wide working area and load range. Sample line patterns were machined on a silicon surface, which has a native oxide on it, by constant load scratch (CLS) of the Nanoindenter with a Berkovich diamond tip, and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structure was made because of masking effect of the affected layer generated by nano-scratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved patterns can be used as a mold that will be used for mass production processes such as nanoimprint or PDMS molding process. All morphological data of scratch traces were scanned using atomic force microscope (AFM).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.233-233
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• 2015

We report on a simple method for inducing physical and chemical property-gradient on nanoimprinted patterns by intensity-regulated plasma treatment under caved sample stage. As for the size gradient, a line pattern having a linewidth of 294.9 nm was etched to have gradually varying width from 277.4 nm to 147.9 nm. Modified pattern was proven to be adaptable to replica stamp for reversal patterning. To investigate the wettability gradient, imprinted nanopatterns were coated with fluoroalkylsilane to increase the hydrophobicity, and the surface was modified to have gradually varying wettability from hydrophobic to hydrophilic (contact angle was ${\sim}160^{\circ}$ to ${\sim}5^{\circ}$ on a single chip). This method is expected to be applicable to the selective adsorption of biological entities and hydrodynamic manipulation of liquid droplets for the pumpless microfluidics.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.294-300
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• 2002

In this study, we fabricated thermopile infrared sensor with floating membrane structure. Floating membrane was formed by SOI(Silicon On Insulator) structure. In SOI structure, silicon dioxide layer between top silicon layer and bottom silicon substrate was etched by HF solution, then membrane was floated over substrate. After membrane was floated, thermopile pattern was formed on membrane. By insertion of SOI technology, we could obtain thermal isolation structure easily and passivation process for sensor pattern protection was not required during fabrication process. Then, the amplifier circuit for thermopile sensor was fabricated by using $1.5{\mu}m$ CMOS process. The voltage gain of fabricated amplifier was about two hundred.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.