• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.182-188
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• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.1-6
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• 2022

In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.

• Microbiology and Biotechnology Letters
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• v.41 no.1
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• pp.17-25
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• 2013

The thermotolerant methylotrophic yeast Hansenula polymorpha is an attractive model organism for various fundamental studies, such as the genetic control of enzymes involved in methanol metabolism, peroxisome biogenesis, nitrate assimilation, and resistance to heavy metals and oxidative stresses. In addition, H. polymorpha has been highlighted as a promising recombinant protein expression host, especially due to the availability of strong and tightly regulatable promoters. In this study, we investigated the possibility of employing human serum albumin (HSA) as the fusion tag for the secretory expression of heterologous proteins in H. polymorpha. A set of four expression cassettes, which contained the methanol oxidase (MOX) promoter, translational HSA fusion tag, and the terminator of MOX, were constructed. The expression cassettes were also designed to contain sequences for accessory elements including His8-tag, $2{\times}(Gly_4Ser_1)$ linkers, tobacco etch virus protease recognition sites (Tev), multi-cloning sites, and strep-tags. To determine the effects of the size of the HSA fusion tag on the secretory expression of the target protein, each cassette contained the HSA gene fragment truncated at a specific position based on its domain structure. By using the Green fluorescence protein gene as the reporter, the properties of each expression cassette were compared in various conditions. Our results suggest that the translational HSA fusion tag is an efficient tool for the secretory expression of recombinant proteins in H. polymorpha.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.224-232
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• 2000

Aluminum metal process in surface micromachining enables to fabricate Al electrodes or Al structures, which improve electrical characteristics by reducing contact- and line-resistance or makes the whole process to be simple by using oxide as sacrificial layer. However, it is not possible to use conventional sacrificial layer etching process, because HF solution attacks aluminum as well as sacrificial oxide. The mixed solution of BHF and glycerine as an alternative shows the adequate properties to meet with this end. The exact etching properties, however, are sensitively depends on the geometry of the released structure, because the most etching process of sacrificial layer proceeds to the lateral direction in narrow space. Also, the surface roughness of aluminum affects to the etching characteristics. This paper reports experimental results on the effect of microstructure and surface roughness of aluminum to the etching properties. Considering these effects, we propose the optimized etching condition, which can be used practically for the fabrication of aluminum electrodes and microstructures by using standard surface micromachining process without modification or additional process.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.169-177
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• 1995

The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.228-238
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• 1992

An investigation on the step-coverage of PECVD and $O_3$ ThCVD oxides was undertaken to implement into the void-free inter metal dielectric planarization using multi-chamber system for the submicron double level metallization. At various initial aspect ratios the instantaneous aspect ratios were measured through modelling and experiment by depositing the oxides up to $0.9{\mu}m$ in thickness in order to monitor the onset of void formation. The modelling was found to be in a good agreement with the observed instantaneous aspect ratio of TEOS-based PECVD oxide whose re-entrant angle was less than $5^{\circ}$. It is demonstrated that either keeping the instantaneous aspect ratio of PECVD oxide as a first layer less than a factor of 0.8 or employing Ar sputter etch to create sloped oxide edge ensures the void-free planarization after$O_3$ ThCVD oxide deposition whose step-coverage is superior to PECVD oxide. It has been observed that $O_3$ ThCVD oxide etchback scheme has shown higher yield of via contact chain than non etchback process, with resistance per via contact of $0.1~0.3{\Omega}/{\mu}m^2$.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.1-7
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• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.5-10
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• 2012

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.