• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.688-691
• /
• 1999

Light was of electric lamp was reflected by bulb reflector. In order to improve the efficiency of the electric lamp. it is inevitable that lamp, it is inevitable that improve the reflectance of bulb reflector. Important factors that affect the reflectance of bulb reflector is working pressure, distance between evaporation source to substrate, the situation of surface of glass. etch rate of glass, etc. In this paper. confirmed the effect of etching, working pressure etc. , and its effect for the reflectance of bulb reflector. Especially, concentration of HF in the etching solution and etching time is to be importnace for characteristic of bulb reflector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.83-87
• /
• 2002

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride ($SiN_X$) is widely used as a gate dielectric material for the hydrogenated amorphous silicon(a-Si:H) thin film transistors (TFT's). We investigated $SiN_X$ films were deposited PECVD at low temperature ($300^{\circ}C$). The reaction gases were used pure nitrogen and a helium diluted of silane gas(20% $SiH_4$, 80% He). Experimental investigations were carried out with the variation of $N_2/SiH_4$ flow ratios from 3 to 50 and the rf power of 200 W. This article presents the $SiN_X$ gate dielectric studies in terms of deposition rate, hydrogen content, etch rate and C-V, leakage current density characteristics for the gate dielectric layer of thin film transistor applications. Electrical properties were analyzed through high frequency (1MHz) C-V and current-voltage (I-V) measurements. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment.

• Journal of Sensor Science and Technology
• /
• v.8 no.5
• /
• pp.368-376
• /
• 1999

This paper predicts the changes in the spring constant, the resonant frequency, the electrostatic force, and the displacement of a resonant structure due to non-ideal anisotropic RIE etching process. First, a $6\;{\mu}m$ thick polysilicon was etched by RIE and the anisotropy of the etched structure was measured as a function of a RF power, a $Cl_2$ flow rate and a chamber pressure. In the experimental results, an anisotropy was decreased as the RF power, the $Cl_2$ flow rate, or the chamber pressure was increased. A comb actuator's operation characteristic was predicted depending on the anisotropy variations in RIE etching. Comb actuators with three different support beam structures were investigated : fixed-fixed, crab-leg, and double crab-leg. As the RIE etch anisotropy becomes non-ideal, i.e. the cross section becomes rather a trapezoidal than a rectangular shape, it decreases spring constant, resonant frequency and electrostatic force of a comb actuator but it increases the displacement of the mass. Among the three structures, the comb actuator with double crab-leg support beams is more influenced by anisotropy variation in RIE etch than other two.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.326-329
• /
• 2005

As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

• Journal of the Semiconductor & Display Technology
• /
• v.17 no.4
• /
• pp.97-100
• /
• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• Clean Technology
• /
• v.7 no.3
• /
• pp.203-214
• /
• 2001

A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.5
• /
• pp.497-503
• /
• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.168-168
• /
• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Journal of the Mineralogical Society of Korea
• /
• v.19 no.4 s.50
• /
• pp.239-246
• /
• 2006

KAERI Underground Research Tunnel (KURT) was recently constructed through the site investigation from the yea. of 2003 at KAERI site, Dukjin-dong, Yuseong-gu, Daejeon city. The geo-logic setting of the site has been slightly metamorphosed. There are small fractures developed in the rock and several kinds of secondary filling minerals exist in the fractures. We examined mineralogical characteristics of fracture-filling calcite, which is not only largely distributed, but also can significantly affect the radionuclides migration. The calcite is found along fractures like other secondary minerals, forming thick veins in part. Most calcite-filled fractures contain quartz, iron oxides, and dolomite as minor minerals. The calcite crystals show an characteristic appearance with an uniformly oriented growth, coated with goethite on the edge and the etch-pit sites of their surface. Some calcite crystals have been newly formed by the precipitation of elements dissolved from the tunnel shotcrete wall, and their morphology changed according to the chemistry and flow of groundwater. The calcite can modify the groundwater chemistry and significantly affect the sorption behavior of radionuclides. The characteristic crystal structure and surface morphology of the calcite examined in the KURT site will be used as important basic data for the radionuclide migration experiment in the future.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.22 no.1
• /
• pp.5-10
• /
• 2012

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.