• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.118.2-118.2
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• 2016

3D NAND 제조에 있어 high-aspect-ratio etch 공정을 견뎌낼 수 있는 hardmask 소재로서 amorphous carbon layer (ACL) 가 각광받고 있으며 hardmask로서의 특성을 향상시키기 위해 다양한 연구가 진행중에 있다 [1]. 본 연구팀의 기존 연구에서 질소 및 붕소 doping 된 ACL 박막의 etch rate 및 Raman 분석을 통해 박막 특성을 확인한 바 있었으나, 공정 중 arcing이 일어나는 등 의도치 않은 문제로 인해 공정 최적화에 일부 문제가 존재하였다. 본 연구에서는 plasma enhanced chemical vapor deposition (PECVD) 공정을 통해 C6H12 기체 및 doping을 위한 NH3 와 B2H6 두 기체를 이용하여 특성 개선된 ACL을 증착하는 과정에서 발생하는 arcing 및 증착 특성을 규명하고자 진공 내 입자의 수농도를 실시간 측정할 수 있는 particle beam mass spectrometer(PBMS)를 적용, 특정 공정 사건 진단 및 해당 사건에서 발생하는 입자를 분석, 증착된 박막의 Raman spectroscopy 결과와 비교 분석하였다.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.48 no.1
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• pp.134-141
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• 2016

Dampening in printing is not only used with plain water but also used with various substances like dampening additive, in order to improve the wetting property by lowering the surface tension and to control material for modifing the ink transfer characteristic with proper emulsification. We have studied the printing quality according to these, looking into interrelationship among the dampening solution's pH, electrical conductivity and IPA content, prescribing the proper usage and minimum usage of fountain solution and dampening additive. In this study, it shows good result when mixing at the 7 wt% dampening with additive solution, which is result from the color density of printed sheets in accordance with the change of dampening solution condition. And the printed density value calculated 1 hour after printing, it shows relatively safe value at the etch liquid 4 wt% and IPA addition 2 wt%. The dry down at this test showed similar results regardless of various dampening conditions on coated paper, but in case of uncoated paper, the dry down showed a quite gap of different due to the fast penetration to the paper.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.351-354
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• 2004

This work presents a simple and cost-effective approach for maskless fabrication of positive-tone silicon master for the replica molding of hyperfine elastomeric channel. Positive-tone silicon masters were fabricated by a maskless fabrication technique using the combination of nanoscratch by Nanoindenter ⓡ XP and XOH wet etching. Grooves were machined on a silicon surface coated with native oxide by ductile-regime nanoscratch, and they were etched in a 20 wt％ KOH solution. After the KOH etching process, positive-tone structures resulted because of the etch-mask effect of the amorphous oxide layer generated by nanoscratch. The size and shape of the positive-tone structures were controlled by varying the etching time (5, 15, 18, 20, 25, 30 min) and the normal loads (1, 5 mN) during nanoscratch. Moreover, the effects of the Berkovich tip alignment (0, 45$^{\circ}$) on the deformation behavior and etching characteristic of silicon material were investigated.

• Journal of Integrative Natural Science
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• v.2 no.1
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• pp.41-44
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• 2009

Photonic crystals containing multiple rugate structure are prepared by electrochemical etchings. Typically etched rugate PSi prepared in this study. Etching is carried out in a Teflon cell by using a two-electrode configuration with a Pt mesh counter electrode. They exhibit sharp photonic band gaps in the optical reflectivity spectrum. This reflectivity can be tuned to appear anywhere in the visible to near-infrared spectral range, depending on the programmed etch waveform. We study the method of full width half maxima and reflectivity index control by using amplitude.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.29-34
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• 1992

JFET's with gate lengths ranging from 1$\mu$m to 8.3$\mu$m are successfully fabricated on InP substrate where the long haul (1.3$\mu$m~8.3$\mu$m) OEIC's(OptoElectronic Integrated Circuits) have been made. The pn junction of InP JFET's is made by co-implantation and RTA process. JFET's have etched-mesa-gate structure and the maximum gm larger than 90mS/mm was measured and this is the highest record in JFET's of such structure without S/D n$^{+}$ ion implantation. To maintain maximum g$_m$ should be well controlled the overetch of n-layer which inevitably occurs during etching off the unused p-layer. The I-V characteristic is checked during p-layer etch, for this purpose. A dc voltage gain of 11 is obtained from a preamplifier circuit thus fabricated.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.494-502
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• 1999

This paper represents an electrostatic micro plate resonator which consists of a rigid plate suspended with four bridges and a counter electrode. The bridges of the resonator are designed corrugated so that the residual stress are released. The FEM simulation results confirmed that the deflection characteristic of the corrugated bridge is hardly affected by the initial residual tensile stress. One resonator with the corrugated bridges and the other with the flat bridges were fabricated by the boron diffusion process and the anisotropic etch process. The vertical deflection of the fabricated electrostatic resonator was measured with a laser vibrometer, and the data were compared with the calculation results. The deflection of the resonator with the flat bridges is smaller than the deflection of that with the corrugated ones because of the residual stress. The residual stress release effect was confirmed by the fact that the measured deflection of the resonator with the corrugated bridges in close to the calculated deflection of the resonator with the flat ones with the initial stress neglected.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.170-178
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• 1987

Changes of the properties of PECVD-SiN film with the variation of deposition process parameters were investigated and optimum process parameters were determined. The refractive index of the film increased with increasing substrate temperature and pressure, and decreasing rf-power, NH3/SiH4 gas ratio and total gas flow. BHF etch rate and deposition rate show a decreasing tendency with increasing refractive index. The step coverage of the film was not affected much by deposition rate and pressure, but improved apparently with increasing rf-power and NH3/SiH4 gas ratio. Also the optimum process parameters were determined by considering the characteristic properties as well as thickness uniformity of films. The refractive index of the film deposited under this condition was 2.06.