• Title/Summary/Keyword: Equivalent material properties

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The 3-Dimensional Finite Element Analysis of Minimum Implant Structure for Edentulous Jaw (무치악에 대한 최소 임플란트의 구조물의 3차원 유한요소 해석)

  • Jang, In-Sik
    • Journal of the Korean Society for Precision Engineering
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    • v.25 no.2
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    • pp.148-155
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    • 2008
  • The aim of the study is to interpret the distribution of occlusal force by 3-dimensional finite element analysis of ISP(Implant Supported Prosthesis) supported by minimum number of implant to restore the edentulous patients. For this study, the Astra Tech implant system is used. Geometric modeling for 6 and 4 fixture ISP group is performed with respect to the bone, implant and one piece superstructure, respectively. Implants are arbitrarily placed according to the anatomical limit of lower jaw and for the favorable distribution of occlusal force, which is applied at the end of cantilever extension of ISP with 30mm. Element type is tetrahedral for finite element model and the typical mechanical properties, Young's modulus and Poisson's ratio of each material, cortical, cancellous bone and implant material are utilized for the finite element analysis. From this study, we can see the distribution of equivalent stress equal to real situation and speculate the difference in the stress distribution in the whole model and at each implant fixture, From the analysis, the area of maximum stress is distributed on distal contact area between bone and fixture in the crestal bone. The maximum stress is 53MPa at the 0.2mm area from the bone-implant interface in the maximum side for 300N load condition for 4 fixture case, which is slightly less than the stress calculated from allowable strain. This stress has not been deduced to directly cause the loss of crestal bone around implant fixture, but the stress can be much reduced as the old peoples may have lower chewing force. Thus, clinical trial may be performed with this treatment protocol to use 4 fixtured ISP for old patients.

Effects of Strontium Gallate Additions on Sintering Behavior and Electrical Conductivity of Ce0.8Gd0.2O2-δ Ceramics (Strontium Gallate의 첨가에 따른 Ce0.8Gd0.2O2-δ 세라믹스의 소결거동과 전기전도도 특성)

  • Park Jin-Hee;Choi Kwang-Hoon;Ryu Bong-Ki;Lee Joo-Sin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.145-152
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    • 2006
  • The densification behavior and electrical conductivity of $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics were investigated with the strontium gallate concentration ranging from 0 to $5\;mol\%$. Both the sintered density and grain size were found to increase rapidly up to $0.5\;mol\%$ $Sr_2Ga_2O_5$, and then to decrease with further addition. Dense $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics with $97\%$ of the theoretical density could be obtained for $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen sintered at $1250^{\circ}C$ for 5 h, whereas pure $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics needed to be sintered at $1550^{\circ}C$ in order to obtain an equivalent theoretical density, Electrical conductivity was measured as a function of dopant content, over the temperature range of $350\;-\;600^{\circ}C$ in air. Total conductivity of $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen showed the maximum conductivity of $2.37{\times}10^{-2}{{\Omega}-1}{\cdot}cm^{-1}$ at $500^{\circ}C$, The addition of strontium gallate was found to promote the sintering properties and electrical conductivities of $Gd_2O_3$-doped $CeO_2$.

Investigation of $WSi_2$ Gate for the Integration With $HfO_3$gate oxide for MOS Devices (MOS 소자를 위한 $HfO_3$게이트 절연체와 $WSi_2$게이트의 집적화 연구)

  • 노관종;양성우;강혁수;노용한
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.832-835
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    • 2001
  • We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

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The Reliability-Based Probabilistic Structural Analysis for the Composite Tail Plane Structures (복합재 미익 구조의 신뢰성 기반 확률론적 구조해석)

  • Lee, Seok-Je;Kim, In-Gul
    • Journal of the Korea Institute of Military Science and Technology
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    • v.15 no.1
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    • pp.93-100
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    • 2012
  • In this paper, the deterministic optimal design for the tail plane made of composite materials is conducted under the deterministic loading condition and compared with that of the metallic materials. Next, the reliability analysis with five random variables such as loading and material properties of unidirectional prepreg is conducted to examine the probability of failure for the deterministic optimal design results. The MATLAB programing is used for reliability analysis combined with FEA S/W(COMSOL) for structural analysis. The laminated composite is assumed to the equivalent orthotropic material using classical laminated plate theory. The response surface methodology and importance sampling technique are adopted to reduce computational cost with satisfying the accuracy in reliability analysis. As a result, structural weight of composite materials is lighter than that of metals in deterministic optimal design. However, the probability of failure for the deterministic optimal design of the tail plane structures is too high to be neglected. The sensitivity of each variable is also estimated using probabilistic sensitivity analysis to figure out which variables are sensitive to failure. The computational cost is considerably reduced when response surface methodology and importance sampling technique are used. The study of the computationally inexpensive method for reliability-based design optimization will be necessary in further work.

A Design of High Temperature Superconducting Low-Pass Filter for Broad-Band Harmonic Rejection (광대역 고조파 제거용 고온초전도 저역통과 필터의 설계)

  • Kwak, Min-Hwan;Kim, Sang-Hyun;Ahn, Dal;Han, Seok-Kil;Kang, Kwang-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.78-81
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    • 2000
  • A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method Ins a cutoff frequency of 0.9 GHz with a 0.01 dB ripple level. The coupled line type low-pass filter with stripline configuration was fabricated by using a high-temperature superconducting (HTS ; $YBa_2Cu_3O_{7-x}$) thin film on MgO(100) substrate. Since the HTS coupled line type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 62 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency Bemuse of good rejection of the spurious signals and harmonics, our low-pass filter is applicable to mobile base station systems such as cellular, personal communication systems and international mobile telecommunication(IMT)-2000 systems.

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Analysis of a.c. Characteristics in ZnO-Bi2O3Cr2O3 Varistor using Dielectric Functions (유전함수를 이용한 ZnO-Bi2O3Cr2O3 바리스터의 a.c. 특성 분석)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.368-373
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    • 2010
  • In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

Analysis of Degradation Mechanism for Single Crystal Blade and Vane in Gas Turbine (가스터빈 단결정 블레이드 및 베인의 손상거동 분석)

  • Song, Kyu-So;Kim, Doo-Soo;Lee, Han-Sang;Yoo, Keun-Bong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.5
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    • pp.549-554
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    • 2011
  • Recently, technical advances have been made in high efficiency gas turbine power plants. In domestic gas turbine facilities, the material properties of the blade and vane are degraded by the daily start-stop operations arising from the thermo mechanical cycle. We surveyed the time dependent degradation of the HP blade and vane to gather basic data for life assessment and damage analysis. The EOH(equivalent operating hours) of the blades were 23,686, 27,909, and 52,859 and the EOH of the vanes were 28,714 and 52,859, respectively. With increased operating hours, the shape of the primary ${\gamma}$' precipitate transformed from cubic to spherical, and its average size also increased. The leading edge area of the blades and the center of the vanes had the worst morphology, and this tendency agrees with the microhardness results. The thickness of the thermally grown oxide at the outer surface of the bond coat increased with increased operating hours.

Shear and Bond Strength of Activated Hwangtoh Concrete Beam (활성 황토 콘크리트 보의 전단 및 부착 강도)

  • Lee, Nam-Kon;Park, Hong-Gun;Hwang, Hye-Zoo
    • Journal of the Korea Concrete Institute
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    • v.22 no.5
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    • pp.685-694
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    • 2010
  • As a eco-friendly material, Hwangtoh (red clay) has been studied for complete or partial replacement of portland cement. Most of existing studies focused on the material properties of the Hwangtoh concrete including the compressive strength, drying shringkage, and creep. In the present study, the shear strength of the beams made with the Hwangtoh concrete was tested. Further, bond strength of tension re-bars embedded in the Hwangtoh concrete was tested. One of the concrete tested consisted of activated Hwangtoh replacing 20% of the cement. The other consisted 100% activated. Hwangtoh replacing all the cement. The beam specimens were tested under two point static loading. The test result showed that the shear strength of activated Hwangtoh concrete beams replacing 20% and 100% of cement was equivalent to that of the ordinary portland cement concrete beam. However, the bond strength of activated Hwangtoh concrete replacing 100% of the cement was less than that of the ordinary portland cement concrete.

Thermal Stability and Electrical Properties of $HfO_xN_y$ ($HfO_2$) Gate Dielectrics with TaN Gate Electrode (TaN 게이트 전극을 가진 $HfO_xN_y$ ($HfO_2$) 게이트 산화막의 열적 안정성)

  • Kim, Jeon-Ho;Choi, Kyu-Jeong;Yoon, Soon-Gil;Lee, Won-Jae;Kim, Jin-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.54-57
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    • 2003
  • [ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.

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Three dimensional finite element analysis of the stress on supporting bone by the abutment materials of dental implant (치과용 임플란트 지대주 재료에 따른 지지골 응력의 3차원 유한요소 분석)

  • Lee, Myung-Kon;Kim, Kap-Jin
    • Journal of Technologic Dentistry
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    • v.40 no.1
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    • pp.41-47
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    • 2018
  • Purpose: The purpose of this study was to analyze the biomechanical properties of the dental implants on the supporting bone using three-dimensional finite element method when three different abutment materials were applied to the implant system. Methods: Three different dental implant models were fabricated by applying Ti, PEEK, and CRE-PEEK (60% carbon-reinforced PEEK) to abutment material. The abutment and connecting screw from the fixture was applied with a tightening torque of 20 Ncm. And then, total loads of 150 N were applied in an $30^{\circ}oblique$ direction (to the vertical). The structural stability of dental implants on the supporting bone was analyzed using Von Mises stress and principal stress values. Results: The maximum tensile stress of the cortical bone was highest at 12.6 MPa in the PEEK abutment (Model-B). Ti abutment (Model-A) and CRE-PEEK abutment (Model-C) showed similar stress distributions (10.6 and 10.3 MPa, respectively). And the maximum compressive principal stress was similar in all models. The Von Mises stress value delivered to the bone around the implant was highest at 16.5 MPa in Model-B. On the other hand, Model-A and C showed similar stress distributions (14.0 and 13.8 MPa, respectively). In addition, the maximum equivalent stress applied to the abutment was highest at 629.8 MPa in Model-A. The stress distribution in Model-C was 573.9 MPa. Whereas, Model-B showed the lowest value at 165.6 MPa. Conclusion : The dental implant supporting bone system using PEEK material seems to have the possibility of supporting bone fracture. It was found that the CRE-PEEK abutment can reduce the elastic deformation and reduce the stress value of the interfacial bone.