• Title/Summary/Keyword: Equilibrium function

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Estimating the Price of Anarchy Using Load Balancing Measure

  • Kim, Jae-Hoon
    • Journal of information and communication convergence engineering
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    • v.7 no.2
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    • pp.148-151
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    • 2009
  • We consider the problem of optimizing the performance of a system with resources shared by non-cooperative users. The worst-cast ratio between the cost of a Nash equilibrium and the optimal cost, called Price of Anarchy, is investigated. It measures the performance degradation due to the users' selfish behavior. As the objective function of the optimization problem, we are concerned in a load balancing measure, which is different from that used in the previous works. Also we consider the Stackelberg scheduling which can assign a fraction of the users to resources while the remaining users are free to act in a selfish manner.

Comparisions of the congestion management methods by the equilibrium strategies in game theory (게임이론의 균형점 해석에 의한 혼잡처리 방식의 비교)

  • Choi, Seok-Keun;Cho, Cheol-Hee;Lee, Kwang-Ho
    • Proceedings of the KIEE Conference
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    • 2003.07a
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    • pp.670-672
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    • 2003
  • The market participants make plans of bidding and transaction strategies to maximize their own profits in competitive electricity market. Also, It is concerned with transmission congestion in power market. Two methods are generally used for congestion management;nodal pricing and uplift. The participants will have different strategies for their profits in the two methods. This paper analyzes their equilibrium strategies by using the supply function model and congestion methods.

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Mathematical Modeling for Traffic Flow (교통흐름의 수학적 모형)

  • Lee, Seong-Cheol
    • Journal of the Korea Safety Management & Science
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    • v.13 no.1
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    • pp.127-131
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    • 2011
  • Even if there are no causing factors such as car crash and road works, traffic congestion come from traffic growth on the road. In this case, estimation of traffic flow helps find the solution of traffic congestion problem. In this paper, we present a optimization model which used on traffic equilibrium problem and studied the problem of inverting shortest path sets for complex traffic system. And we also develop pivotal decomposition algorithm for reliability function of complex traffic system. Several examples are illustrated.

A Competitive Equilibrium Model of the Market for Used Goods (내구재 시장의 경쟁 균형 모형)

  • Kim, Jae-Cheol
    • IE interfaces
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    • v.2 no.2
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    • pp.63-73
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    • 1989
  • The present paper determines the equilibrium price function of used goods and their carry-over age when there are heterogeneous firms with different factor prices. It is shown that the used good market enables more efficient use of durable goods and thereby gains from trades. It is also shown that firms with a lower interest rate and a higher wage rate specialize in using newer goods.

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A study on the electron energy diffusion function of the sulphur hexaflouride ($SF_6$ 가스의 전자에너지 분포함수에 관한 연구)

  • 김상남;유회영;서상현;박동화;하성철
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 1996.11a
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    • pp.134-139
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    • 1996
  • The electron energy distributions function were analysed in sulphur hexaflouride at E/N : 500~800(Td) for a case of non-equilibrium ion in the mean electron energy. This paper describes the electron transport characteristics in SF$_{6}$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.n.

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MODELING AND ANALYSIS OF AN EPIDEMIC MODEL WITH CLASSICAL KERMACK-MCKENDRICK INCIDENCE RATE UNDER TREATMENT

  • Kar, T.K.;Batabyal, Ashim;Agarwal, R.P.
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • v.14 no.1
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    • pp.1-16
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    • 2010
  • An epidemic model with Classical Kermack-Mckendrick incidence rate under a limited resource for treatment is proposed to understand the effect of the capacity for treatment. We have assumed that treatment function is strictly increasing function of infective individuals and becomes constant when the number of infective is very large. Existence and stability of the disease free and endemic equilibrium are investigated, boundedness of the solutions are shown. Even in this simple version of the model, backward bifurcation and multiple epidemic steady states can be observed with some sets of parameter values. Hopf-bifurcation analyses are given and numerical examples are provided to help understanding.

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

  • Charmi, Morteza
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.5
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    • pp.270-274
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    • 2016
  • This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices

  • Jin, Seong-Hoon;Park, Chan-Hyeong;Chung, In-Young;Park, Young-June;Min, Hong-Shick
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.1
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    • pp.1-9
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    • 2006
  • We introduce our in-house program, NANOCAD, for the modeling and simulation of carrier transport in nanoscale MOSFET devices including quantum-mechanical effects, which implements two kinds of modeling approaches: the top-down approach based on the macroscopic quantum correction model and the bottom-up approach based on the microscopic non-equilibrium Green’s function formalism. We briefly review these two approaches and show their applications to the nanoscale bulk MOSFET device and silicon nanowire transistor, respectively.

STABILITY AND OPTIMAL CONTROL OF MICROORGANISMS IN CONTINUOUS CULTURE

  • Li Xiaohong;Feng Enmin;Xiu Zhilong
    • Journal of applied mathematics & informatics
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    • v.22 no.1_2
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    • pp.425-434
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    • 2006
  • The process of producing 1,3-preprandiol by microorganism continuous cultivation would attain its equilibrium state. How to get the highest concentration of 1,3-propanediol at that time is the aim for producers. Based on this fact, an optimization model is introduced in this paper, existence of optimal solution is proved. By infinite-dimensional optimal theory, the optimal condition of model is given and the equivalence between optimal condition and the zero of optimality function is proved.

A Study on the electron energy diffusion function of the sulphur hexaflouride (SF_6 가스의 전자에너지 분포함수에 관한 연구)

  • ;金相南
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.2
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    • pp.227-227
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    • 1999
  • The electron energy distributions function were analysed in sulphur hexaflouride at E/N : 500~800(Td) for a case of non-equilibrium region in the mean electron energy. This paper describes the electron transport characteristics in $SF_6$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters. The results gained that the value of ane1ctron swarm parameter such as the e1ectron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.