• Applied Microscopy
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• 제51권
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• pp.1.1-1.2
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• 2021

We demonstrate a fabrication of an atomically controlled single-crystal heart-shaped nanostructure using a convergent electron beam in a scanning transmission electron microscope. The delicately controlled e-beam enable epitaxial crystallization of perovskite oxide LaAlO₃ grown out of the relative conductive interface (i.e. 2 dimensional electron gas) between amorphous LaAlO₃/crystalline SrTiO₃.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1036-1038
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• 2001

The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.

• Journal of Magnetics
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• 제7권2호
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• pp.51-54
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• 2002

The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${\AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and \alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline \alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the \alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the \alpha-Fe_2O_3$grains was about 250 ${\AA}$ in the film plane, similar to that of the Ba-ferrite grains.

• Current Photovoltaic Research
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• 제2권1호
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• Journal of Welding and Joining
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• 제20권5호
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• pp.93-98
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• 2002

The effect of bonding misfit on single crystallization of transient liquid phase (TLP) bonded joints of single crystal superalloy CMSX-2 was investigated using MBF-80 insert metal. The bonding misfit was defined by (100) twist angle (rotating angle) at bonded interface. TLP bonding of specimens was carried out at 1523K for 1.8ks in vacuum. The post-bond heat treatment consisted of the solution and sequential two step aging treatment was conducted in the Ar atmosphere. The crystallographic orientation analysis across the TLP bonded joints was conducted three dimensionally using the electron back scattering pattern (EBSP) method. EBSP analyses f3r the bonded and post bonded heat treated specimens were conducted. All bonded joints had misorientation centering around the bonded interface for as-bonded and post-bond heat treated specimens with rotating angle. The average misorientation angle between both solid phases in bonded interlayer was almost identical to the rotating angle at bonded interface. HRTEM observation revealed that the atom arrangement of both solid phases in bonded interlayer was quite different across the bonded interface. It followed that grain boundary was formed in bonded interface. It was confirmed that epitaxial growth of the solid phase occurred from the base metal substrates during TLP bonding and single crystallization could not be achieved in joints with rotating angle.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.191-194
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• 1997

Epitaxial Pb(Zr, Ti)O3(PZT) thin films were prepared on MgO(100) substrates by dipping-pyrolysis (DP) process using metal naphthenates as starting materials, and effects of pyrolysis and final heat-treatment conditions on the film's orientation were investigated. Solid-state epitaxial growth of PZT proceeds at lower temperature around 650℃ from the precursor pyrolyzed at 350 and 500℃. The in-plane alignment of the PZT films depends not only on the final heat-treatment temperature but on the pyrolysis conditions; the films, pyrolyzed at a higher temperature for a short time, i.e., at 500℃ for 10 min, exhibited stronger orientation after the same final heat treatment at 650°∼750℃. The PZT films with the strongest orientation were prepared by pyrolysis under the above conditions followed by final heat treatment at 750℃.

• 한국세라믹학회지
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• 제28권11호
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• pp.865-872
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• 1991

LAS (lithium aluminosilicate) sol was synthesized using the hydrolysis-condensation reaction of TEOS, chelated Al(OBus)3 and LiNO3 with H2O in alcohol (ethanol+2-propanol) medium. Lowering Li content by a factor of 1/2 significantly enhanced densification and retarded the crystallization of LAS gel by ~30$0^{\circ}C$. Dense LAS specimen with essentially pore-free microstructure was obtained by sintering the sol-gel derived gel at 80$0^{\circ}C$ for 4 h and annealing at 120$0^{\circ}C$ for 2 h. Similary, a mixed colloidal processing was attempted as a convenient, alternative route for the fabrication of dense LAS sintered body. The $\beta$-spodumene seeding (~0.8 ${\mu}{\textrm}{m}$) in the sol-gel derived LAS modified the sequence of phase transformations and lowered the temperature of crystallization by ~12$0^{\circ}C$. Combining the epitaxial seeding with the sol-gel process, we could lower the crystallization temperature to the sintering temperature range (~80$0^{\circ}C$) and, demonstrate a possibility of making the viscous sintering/crystallization as a continuous as a continuous unit process.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.708-712
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• 2002

The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (＞40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (＞$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.

• 전자공학회논문지 IE
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• 제48권2호
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• pp.1-5
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• 2011

HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

• 한국재료학회지
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• 제24권9호
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.