Crystallization and In-plane Alignment Behavior of Pb(Zr, Ti)$O_3$ Films

  • Hwang, Kyu-Seog (National Institute of Materials and Chemical Research) ;
  • Kim, Byung-Hoon (Department of Inorganic Materials Engineering, Chonnam National University)
  • 발행 : 1997.09.01

초록

Epitaxial Pb(Zr, Ti)O3(PZT) thin films were prepared on MgO(100) substrates by dipping-pyrolysis (DP) process using metal naphthenates as starting materials, and effects of pyrolysis and final heat-treatment conditions on the film's orientation were investigated. Solid-state epitaxial growth of PZT proceeds at lower temperature around 650℃ from the precursor pyrolyzed at 350 and 500℃. The in-plane alignment of the PZT films depends not only on the final heat-treatment temperature but on the pyrolysis conditions; the films, pyrolyzed at a higher temperature for a short time, i.e., at 500℃ for 10 min, exhibited stronger orientation after the same final heat treatment at 650°∼750℃. The PZT films with the strongest orientation were prepared by pyrolysis under the above conditions followed by final heat treatment at 750℃.

키워드

참고문헌

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