• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.26-27
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.46-47
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.14-14
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• 1995

• Proceedings of the Korean Magnestics Society Conference
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• 1994.10a
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• pp.56-57
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.50-50
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• 1995

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.355-355
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• 2010

The epitaxial growth of MgO film on Fe(001) has been investigated by scanning tunneling microscopy (STM). After confirming the clean Fe(001)-c($2{\times}2$) substrate by STM, Mg was deposited at room temperature (RT) under $O_2$ partial pressure of $10^{-7}\;Torr$. The MgO was grown as clusters, not as an epilayer even after postannealing at $400^{\circ}C$, as shown in Figure (a). On the contrary, when Mg was deposited on Fe(001)-c($2{\times}2$) at RT and post-oxidized through exposing $O_2$ at partial pressure $10^{-7}\;Torr$, the thin-layered film with some clusters was formed. Extended-annealing at $400^{\circ}C$ reduced the cluster density, and finally the single and epitaxial MgO-c($2{\times}2$) film was formed on Fe(001)-c($2{\times}2$) as shown in Figure (b). This ultrathin MgO film formed on Fe is expected to be applied to many technological applications, such as catalysis, microelectronics, and magnetic devices.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.345-358
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• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.285-290
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• 2013

Epitaxial graphene on metal substrates provides excellent platforms to study its atomic and electronic structures, and can be grown either by surface segregation of carbon or by chemical vapor deposition. The growth behaviors of the two methods, however, have not been directly compared each other. Here, we studied domain structures of graphene grown by three different methods, surface segregation, post-annealing with adsorbed ethylene, and high-temperature dose of ethylene, using scanning tunneling microscopy. The first two methods resulted in graphene regions with areas of $100nm^2$, whereas the third method showed large area graphene (> $10^4nm^2$) with regular hexagonal Moire patterns, implying that high-temperature dose of ethylene is preferable for further studies on graphene such as additional growth of organic molecules.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.63-70
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• 1996

Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, $SiH_{2}Cl_{2}\;/\;H_{2}$ gas mixtures and various process parameters including $H_{2}$ prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of $900^{\circ}C$. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about $200{\AA}/decade$ in the structure of undoped Si / $n^{+}-Si$ substrate.