• 한국재료학회지
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• 제15권10호
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• pp.657-661
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• 2005

[ $ZnHgGa_4Se_8\;and\;ZnHgGa_4Se_8::Co^{2+}$ ] single crystals were grown by the Bridgman-Stockbarger method. The single crystals crystallized into a defect chalcopyrite structure. The optical energy band gap of the single crystals was investigated in the temperature range 11-300K. The optical energy band gap of the $ZnHgGa_4Se_8:Co^{2+}$ single crystal was smaller than that of the $ZnHgGa_4Se_8$ single crystal. The temperature dependence of the optical energy band gap of the single crystals was well fitted by the Varshni equqtion. The impurity optical absorption spectrum of the $ZnHgGa_4Se_8:Co^{2+}$ single crystal was measured in the wavelength region 300-2300 m at 80 K. Impurity absorption peaks in the spectrum were analyzed within the framework of the crystal field theory and were attributed to the electron transitions between the energy levels of $Co^{2+}$ sited in the Td symmetry point.

• Smart Structures and Systems
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• 제17권3호
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• pp.413-429
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• 2016

The recent research on proper orthogonal decomposition (POD) has revealed the linkage between proper orthogonal modes and linear normal modes. This paper presents an investigation into the modal identifiability of an instrumented cable-stayed bridge using an adapted POD technique with a band-pass filtering scheme. The band-pass POD method is applied to the datasets available for this benchmark study, aiming to identify the vibration modes of the bridge and find out the so-called deficient modes which are unidentifiable under normal excitation conditions. It turns out that the second mode of the bridge cannot be stably identified under weak wind conditions and is therefore regarded as a deficient mode. To judge if the deficient mode is due to its low contribution to the structural response under weak wind conditions, modal coordinates are derived for different modes by the band-pass POD technique and an energy participation factor is defined to evaluate the energy participation of each vibration mode under different wind excitation conditions. From the non-blind datasets, it is found that the vibration modes can be reliably identified only when the energy participation factor exceeds a certain threshold value. With the identified threshold value, modal identifiability in use of the blind datasets from the same structure is examined.

• 대한화학회지
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• 제51권3호
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• pp.265-269
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• 2007

국부적인 결정구조와 에너지 띠 간격 간 상관관계를 고찰하기 위하여 Nb를 포함하는 일련의 불소 산화물에 대하여 결정구조와 자외선-가시광선 확산 반사율 스펙트럼을 비교, 연구하였다. 이 실험에서 다룬 RbSrNb2O6F와 RbCaNb2O6F, RbNb2O5F는 공통적으로, 꼭지점 공유를 하고 있는 NbO5F 팔면체로 구성되어 있 다. 구조적 뒤틀림 정도의 척도로 볼 수 있는 Nb-O(F)-Nb 평균 결합각은 RbSrNb2O6F에서 158.6°, RbCaNb2O6F 에서 149.6° 그리고 RbNb2O5F에서 139.5o이다. 확산 반사율 스펙트럼으로부터 구한 에너지 띠 간격은 Nb-O(F)-Nb 결합각이 감소할수록 증가하는 경향을 보였다. 즉 RbSrNb2O6F, RbCaNb2O6F, RbNb2O5F 각각의 화합물에 대해 서 3.48 eV, 3.75 eV, 4.03 eV 의 값을 나타내었다. 이러한 실험적 결과는 Nb를 포함하는 불소 산화물에서 국 부구조의 변화를 통해 띠 간격을 약 0.6 eV의 범위에서 조절할 수 있음을 의미한다.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• 센서학회지
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• 제16권6호
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

• 센서학회지
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• 제16권1호
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• pp.1-6
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• 2007

A silver indium sulfide ($AgInS_{2}$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, ${\Delta}cr$, and the spin orbit splitting, ${\Delta}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.

• 전기화학회지
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• 제14권1호
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• pp.33-37
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• 2011

$Li_4Ti_5O_{12}$는 우수한 안정성으로 고출력 배터리의 음극 물질로 주 목 받고 있다. 그러나 절연체로서 전도도의 개선이 필요한 상황으로 다양한 방법이 시도되고 있다. 본 연구에서는 Cr 도핑을 통해서 $Li_4Ti_5O_{12}$의 전도도 향상을 목표로 하였으며, X-선 흡수 실험 및 FEFF 8.4 코드를 이용한 제일원리 계산을 통해서 도핑에 의한 미세 구조 및 전자 구조의 변화를 분석하였다. Cr 도핑은 페르미 레벨을 Cr d 밴드의 중심에 위치시켜 전도성을향상시켰으며, Ti d 밴드의 전자밀도를 높여 XANES pre-edge및 White line의 변화를 야기했다.

• 한국소음진동공학회논문집
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• 제17권1호
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• pp.55-64
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• 2007

In the built-up structure consisting of a stiff beam and a flexible plate, Grice showed that the plate behaves as an energy absorber in narrow frequency bands(called plate blocking effect). This paper deals with such beam-plate coupled structures, where the plate is an energy absorber and the excited beam is an energy path. It is found that such energy dissipation can occur in the relatively broad bands, if different stiffnesses are used in the rectangular plate. It was experimentally verified by Heckl that the energies in terms of one-third octave band averages transferred to the plate(or dissipated in the plate) increase for increased plate damping. This Paper, however, shows that the energy absorption suddenly reduces at the certain narrow frequency bands where the plate damping effect upon the coupled beam is maximum. Also, in order to minimize energy transfer through the beam in terms of one-third octave band averages, it is advantageous to increase the plate damping closer to the excitation point All these results are based on the wane method.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.92-96
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• 2009

A new precursor [$Zr(acac)_{3}(H_{2}O)_{2}$] was synthesized by Sonochemical technique and used to deposit thin $ZrO_{2}$ film on quartz and ceramic substrate via ultrasonic aerosol assisted chemical vapour deposition (UAACVD) at 300 ${^{\circ}C}$ in oxygen environment followed by annealing of the sample for 2-3 minutes at 500 ${^{\circ}C}$ in nitrogen ambient. The molecular structure of the precursor determined by single crystal X-ray analysis revealed that the molecules are linked through intermolecular hydrogen bonds forming pseudo six and eight membered rings. DSC and TGA/FTIR techniques were used to determine thermal behavior and decomposition temperature of the precursor and nature of evolved gas products. The optical measurement of annealed $ZrO_{2}$ film with tetragonal phase shows optical energy band gap of 5.01 eV. The particle size, morphology, surface structure and composition of deposited films were investigated by XRD, SEM and EDX.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.170-173
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• 2006

[ $CuInS_2$ ] filims were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated, Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant (a) of and grain size of the film tin s ambient were appeared a little larger than those in only Vacuum The films in S ambient were p-type with resistive of around $10^{-1}{\Omega}cm$ and optical energy band gaps of the films in S ambient were appeared a little larger than those in only Vacuum. Analysis of the optical energy band gap of $CuInS_2$ thin films a value of 1.53eV.