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http://dx.doi.org/10.5369/JSST.2007.16.1.001

Temperature dependence of photocurrent for the AgInS2 epilayers grown by hot wall epitaxy  

Park, Chang-Sun (Department of Matallurgical and Materials Engineering, Chosun University)
Hong, Kwang-Joon (Department of Physics, Chosun University)
Lee, Sang-Youl (Department of Physics, Chosun University)
You, Sang-Ha (Department of Physics, Chosun University)
Lee, Bong-Ju (Department of Physics, Chosun University)
Publication Information
Journal of Sensor Science and Technology / v.16, no.1, 2007 , pp. 1-6 More about this Journal
Abstract
A silver indium sulfide ($AgInS_{2}$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, ${\Delta}cr$, and the spin orbit splitting, ${\Delta}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.
Keywords
silver indium sulfide; crystal field splitting energy; spin orbit splitting energy; photocurrent spectrum;
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Times Cited By KSCI : 1  (Citation Analysis)
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