• Mass Spectrometry Letters
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• v.7 no.3
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• pp.64-68
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• 2016

Scanning electron microscopy combined with thermal ionization mass spectrometry (SEM-TIMS) was used to determine the precise isotope ratios of ultra-trace levels of uranium contained in individual microparticles. An advanced multiple ion counter system consisting of three secondary ion multipliers and two compact discrete dynodes was used for complete simultaneous ion detection. For verification purposes, using TIMS with complete simultaneous measurement, isotopes were analyzed in 5 pg of uranium of a certified reference material. A microprobe in the SEM was used to transfer individual particles from a NUSIMEP-7 sample to TIMS filaments, which were then subjected to SEM-TIMS and complete simultaneous measurement. The excellent agreement in the resulting uranium isotope ratios with the certified NUSIMEP-7 values shows the validity of SEM-TIMS with complete simultaneous measurement for the analysis of uranium isotopes in individual particles. Further experimental study required for investigation of simultaneous measurement using the advanced multiple ion counter system is presented.

• Carbon letters
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• v.15 no.1
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• pp.15-24
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• 2014

As a part of the electromagnetic spectrum, microwaves heat materials fast and efficiently via direct energy transfer, while conventional heating methods rely on conduction and convection. To date, the use of microwave heating in the research of carbon-based materials has been mainly limited to liquid solutions. However, more rapid and efficient heating is possible in electron-rich solid materials, because the target materials absorb the energy of microwaves effectively and exclusively. Carbon-based solid materials are suitable for microwave-heating due to the delocalized pi electrons from sp2-hybridized carbon networks. In this perspective review, research on the microwave heating of carbon-based solid materials is extensively investigated. This review includes basic theories of microwave heating, and applications in carbon nanotubes, graphite and other carbon-based materials. Finally, priority issues are discussed for the advanced use of microwave heating, which have been poorly understood so far: heating mechanism, temperature control, and penetration depth.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3411-3414
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• 2010

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.561-561
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• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• Bulletin of the Korean Chemical Society
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• v.6 no.4
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• pp.186-191
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• 1985

The effect of pressure and temperature on the stabilities of the charge transfer complexes of hexamethyl benzene with iodine in n-hexane has been investigated by UV-spectrophotometric measurements. In this experiment the absorption spectra of mixed solutions of hexamethyl benzene and iodine in n-hexane were measured at 25, 40 and $60^{\circ}C$ under 1,200, 600, 1200 and 1600 bar. The equilibrium constant of the complex formation was increased with pressure while being decreased with temperature raising. Changes of volume, enthalpy, free energy and entropy for the formation of the complexes were obtained from the equilibrium constants. The red shift at higher pressure, the blue shift at higher temperature and the relation between pressure and oscillator strength were discussed by means of thermodynamic functions. In comparison with the results in the previous studies, it can be seen that the pressure dependence of oscillator strength has a extremum behavior in durene as the variation of ${\Delta}H$ or ${\Delta}S$ with the number of methyl groups of polymethyl benzene near atmospheric pressure in the previous study. The shift or deformation of the potential in the ground state and in the excited state of the complexes formed between polymethyl benzene and iodine was considered from the correlation between the differences of the electron transfer energies and the differences of free energies of the complex formation for the pressure variation.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.24-24
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• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

• Journal of the Korean Chemical Society
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• v.41 no.3
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• pp.117-122
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• 1997

On the basis of our previous paper[Bull. Korean Chem. Soc. 1995, 16, 1015], the relative stability, ionization potential, and chemical reaction of the neutral and multiply charged $C_{60}$n ions(n=3+ to 6-) have been investigated by the semi-empirical MNDO method. $C_{60}^{1-}$ has the highest stability. The ionization potential values of the $C_{60}$ ions range from 15.31 eV of $C_{60}^{2+}$ to -13.01 eV of $C_{60}^{6-}$. These values show a linear relationship according to charges. The average IP per charge is 3.15 eV from our calculations and 3.22 eV from the linear function of IP. A charge- or electron-transfer reaction of $C_{60}^{n+}$ will only occur if the ionization potential of any guest molecule is lower than the electron affinity of the host $C_{60}^{n+}$. If the energy gap between ionization potential and electron affinity, ${\Delta}_{IP-EA}$, is high, charge-transfer reactions arise by the charge-controlled effect. However, if ${\Delta}_{IP-EA}$ is low, electron-transfer reactions arise by the frontier-controlled effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.388-388
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• 2011

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. The physical properties of graphene depend directly on the thickness. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ~60 ${\Omega}/sq$ and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition,for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10~15 nm in mean size were decorated along the surface of the graphene after 1.0 MeV-e-beam irradiation. The fabrication high-performance TCF with optimized doping condition showed a sheet resistance of ~150 ${\Omega}/sq$ at 94% transmittance. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• Journal of Life Science
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• v.15 no.2 s.69
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• pp.311-315
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• 2005

When paraquat was added to the bacterial membrane or mitochondrial suspension, the mixture turned dark blue, but the color was disappeared by aeration. The same phenomenon was seen when electrons were supplied to the paraquat. Blue color appeared from near the cathode, and then spreaded to whole transit system. Coloration was accelerated by addition of alkali, but the color was reduced by addition of acid or oxygen. Paraquat exhibited absorption at ultraviolet region by electron transfer at the concentrations as low as 1.0 mM which did not exert difficulty in showing color reaction. Paraquat caused the increase of the optical density at 340 nm by electron transit, and an aspect of that had a strong resemblance to NADH. The acute toxic action of paraquat seemes to depend on inhibition of energy metabolism cased by paraquat action of electron donor and acceptor.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.71-75
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• 2022

Graphene oxide was stirred with a ZnCl₂:NaCl electrolyte and electrochemically coated by cyclic voltammetry to simplify the electron transpfer layer film forming process for organic solar cells and to fabricate an organic solar cell having it. The device structure is FTO/ZnO:graphene/P3HT:PCBM/PEDOT:PSS/Ag. Morphology and chemical properties of ETL were confirmed by scanning electron microscopy(SEM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. As a result of XPS measurement, ZnO metal oxide and carbon bonding were simultaneously confirmed, and ZnO and graphene peaks were confirmed by Raman spectroscopy. The electrical characteristics of the manufactured solar cell were specified with a solar simulator, and the ETL device coated twice at a rate of 0.05 V/s showed the highest photoelectric conversion efficiency of 1.94%.