• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.664-664
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• 2013

Red europium(III) and green terbium(III) activating phosphors have been doped and co-doped in gadolinium oxide supports by a hydrothermal method. Scanning electron microscope images reveal that they are one-dimensional nanorods of 40~50 wide and 250~300 nm long. The gadolinium oxide supports show Gd(OH)3 of hexagonal phase and Gd2O3 of cubic crystal structure before and after a thermal annealing, respectively based on X-ray diffraction analysis. Their physicochemical characteristics have further been examined by photoluminescence spectroscopy, FT-IR, UV-visible absorption, and optical microscope. The emission colors are characterized by CIE coordinates. In addition, the emissions from Eu(III) and Tb(III) are assigned to $5D0{\rightarrow}7FJ$ (J=0,1,2,3,4) and $5D4{\rightarrow}FJ$ (J=6,5,4,3), respectively.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.6
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• pp.153-158
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• 2007

The present study covers numerical analysis of a thermionic scanning electron microscope(SEM) column. The SEM column contains an electron optical system in which electrons are emitted and moved to form a focused beam, and this generates secondary electrons from the specimen surfaces, eventually making an image. The electron optical system mainly consists of a thermionic electron gun as the beam source, the lens system, the electron control unit, and the vacuum unit. For a systematic design of the electron optical system, the beam trajectories are investigated through numerical analyses by tracing the ray path of the electron beams, and the quality of resulting image is evaluated from the analysis results.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.365-373
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• 2008

We have succeeded in synthesizing vertically aligned thin multi-walled carbon nanotubes (VA thin-MWCNTs) by a catalytic chemical vapor deposition (CCVD) method onto Fe/Al thin film deposited on a Si wafers using an optimum amount of hydrogen sulfide ($H_2S$) additive. Scanning electron microscope (SEM) images revealed that the as-synthesized CNT arrays were vertically well-oriented perpendicular to the substrate with relatively uniform length. Transmission electron microscope (TEM) observations indicated that the as-grown CNTs were nearly catalyst-free thin-MWCNTs with small outer diameters of less than 10nm. The average wall number is about 5. We suggested a possible growth mechanism of the VA thin-MWCNT arrays. The VA thin-MWCNTs showed a low turn-on electric field of about $1.1\;V/{\mu}m$ at a current density of $0.1\;{\mu}A/cm^2$ and a high emission current density about $2.5\;mA/cm^2$ at a bias field of $2.7\;V/{\mu}m$. Moreover, the VA thin-MWCNTs presented better field emission stability without degradation over 20 hours (h) at the emission current density of about $1\;mA/cm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.734-739
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• 2005

Zinc oxide films were deposited on Si (111) substrates by radio-frequency (rf)sputtering at a room temperature and post annealed in Na, air, and $H_2O$ ambient at temperatures between $800{\circ}C$ for 2 hrs. The properties were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and photoluminescence (PL). Our experiments demonstrated that ZnO films have the better crystal quality for post thermal annealing and especially in $H_2O$ ambient. Even though thermal annealing reduced deep level emission somewhat, for further getting rid off deep level emission, oxygen contents should be adjusted. In our results, $H_2O$ ambient gave the best structural and optical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• Journal of Photoscience
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• v.6 no.4
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• pp.183-186
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• 1999

We have been prepared the porous silicon carbide (PSC) by electrochemical etching of silicon carbide single crystals. Samples of PSC have been studied by the methods of scanning electron microscope (SEM) and photoluminescence (PL). Two PL bands attributed to the blue and green light emission were observed in this study. According to the anodization conditions, the main source of emission in the oxidized layers of PSC lies in the different surface defect centers which consist of different geometrical structures due to the polytypes. It means that origin of these PL bands may be existed in different size pores simultaneously. The present results indicate that the high energy band comes from the top porous layers while the low energy band comes from the lower porous layers.

• Journal of Ocean Engineering and Technology
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• v.10 no.4
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• pp.38-50
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• 1996

Recently carbon fiber reinforced plastic (CFRP) has been used structural materials in corrosive environment such as for water, chemical tank and pipes. However, mechanical properties of such materials may be change when CFRP and exposed to corrosive environment for long periods of time. The degradation behavior of carbon fiber/epoxy resin composite material in distilled water is investigated using acoustic emission (AE) technique, Fracture toughness tests are performed on the compact tension specimens that are pilled by two types of $[O_2/9O_2]_{3s}$ and $[O/9O]_6s$. During the testes, AE test was carried out to monitor the damage of CFRP by moisture absorption. The data was treated by 2-parameter Weibull distribution and the fracture surface was observed by scanning electron microscope.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1991.04a
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• pp.127-133
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• 1991

Acoustic microscopy has attracted much intrest recently as potential mondestructive evalution technique for detecting and sizing defects of surface and sub-surface. Also acoustic emission testing method has been developed for detecting microcracks which is more than 30 umm in length quintitatively on ceramics material. In the present paper, acoustic emission during the four point bending test in hot-pressed sintered Si$\_$3/N$\_$4/ specimen which was stressed bythermal shock has been measured by high sensitive sensing system. The surface and sub-surface cracks were detected by scanning acoustic microscope of 800 MHz and conventional ultrasonic testing in C-scope image. The purpose was to investigate the location and size of cracks by SAM and AE technique, whose experimental datas demontrates good agreement for detecting microcracks.

• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.79-83
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• 2008

The dampness by treating the surface with polyethylene terephthalate (PET) film was measured to grasp the plasma parameters and was observed the surface condition with an atomic force microscope (AFM) to find the causes of the dampness. Also, the vibrational and rotational temperatures in the plasma were calculated after identifying the radicals within the plasma by analyzing the emission spectral with an emission spectrum. The hydrophilic properties were enhanced, by treating the surface of the PET film with non-equilibrium atmospheric discharge plasma. When the rotational temperature was 0.22 to 0.31 eV within the plasma, surface modification control could be easily carried out to surface treatment of PET film on non-equilibrium atmospheric pressure plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.316-319
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• 2000

By RF magnetron sputtering ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate. Crystallographic orientation was characterized by x-ray diffraction(XRD). Surface morphology and microstructure were observed by scanning electron microscope(SEM). Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. PL spectrum of ZnGa$_2$O$_4$thin films showed broad band luminescence spectrum.