• 제목/요약/키워드: Electrostatic loss

검색결과 57건 처리시간 0.025초

A Disparate Low Loss DC to 90 GHz Wideband Series Switch

  • Gogna, Rahul;Jha, Mayuri;Gaba, Gurjot Singh;Singh, Paramdeep
    • Transactions on Electrical and Electronic Materials
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    • 제17권2호
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    • pp.92-97
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    • 2016
  • This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

PZT 캔틸레버 구동기와 마이크로 시소구조를 적용한 저전압 SPDT MEMS RF 스위치 구현 (Implementation of a Low Actuation Voltage SPDT MEMS RF Switch Applied PZT Cantilever Actuator and Micro Seesaw Structure)

  • 이대성;김원효;정석원;조남규;성우경;박효덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.147-150
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    • 2005
  • Low actuation voltage and no contact stiction are the important factors to apply MEMS RF switches to mobile devices. Conventional electrostatic MEMS RF switches require several tens of voltages for actuation. In this paper we propose PAS MEMS RF switch which adopt PZT actuators and seesaw cantilevers to meet the above requirements. The fundamental structures of PAS MEMS switch were designed, optimized, and fabricated. Through the developed processes PAS SPDT MEMS RF switches were successfully fabricated on 4" wafers and they showed good electrical properties. The driving voltage was less than 5 volts. And the insertion loss was -0.5dB and the isolation was 35dB at 5GHz. The switching speed was about 5kHz. So these MEMS RF switches can be applicable to mobile communication devices or wireless multi-media devices at lower than 6GHz.

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자외선 가속열화에 따른 옥외용 폴리머 절연재료의 표면열화 분석 (Analysis of Surface Degradation on Accelerated UV-treated Polymeric Housing Materials for Outdoor Insulator)

  • 연복희;이상용;허창수;심대섭;조한구
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권10호
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    • pp.479-488
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    • 2001
  • The effects of accelerated Ultraviolet (UV) radiation on High temperature vulcanized (HTV), Room temperature vulcanized (RTV) silicone rubber and two types of ethylene propylene diene terpolymer (EPDM) used for composite insulator were inverstigated by hydrophobicity class (HC), surface voltage decay after corona charging, SEM-EDS, FTIR and XPS. The contact angle in two kinds of silicone rubber was scarcely change, but EPDM occurred to the loss of hydrophobicity followed by surface cracking and chalking. The surface voltage decay on UV-treated silicone rubber and EPDM showed a different decay trend with UV treatment. EDS and XPS analysis indicated that the oxygen content increased with UV treatment time in all samples. For silicone rubber, the oxidized groups of inorganic silica-like structure increased with UV treatment time. The oxidized carbon of C=0, O=C-O in EPDM increased. These oxidized surface for each material had different electrostatic characteristics, so deposited charges were expected to have different impacts on their surface hydrophobicity. The degradation mechanism based on our results was discussed.

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ICP 장치를 이용한 초전도 자속 흐름 트랜지스터의 링크 제작 (Fabrication of the Superconducting Flux Flow Transistor Using the ICP Etching Method)

  • 강형곤;임연호;임성훈;최효상;한윤봉;한병성
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권10호
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    • pp.494-499
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    • 2001
  • The effects of accelerated Ultraviolet (UV) radiation on High temperature vulcanized (HTV), Room temperature vulcanized (RTV) silicone rubber and two types of ethylene propylene diene terpolymer (EPDM) used for composite insulator were investigated by hydrophobicity class (HC), surface voltage decay after corona charging, SEM-ES, FTIR and XPS. The contact angle in two kinds of silicone rubber was scarcely change, but EPDM occurred to the loss of hydrophobicity followed by surface cracking and chalking. The surface voltage decay on UV-treated silicone rubber and EPDM showed a different decay trend with UV treatment. EDS and XPS analysis indicated that the oxygen content increased with UV treatment time in all samples. For silicone rubber, the oxidized groups of inorganic silica-like structure increased with UV treatment time. The oxidized carbon of C=O, O=C-O in EPDM increased. These oxidized surface for each material had different electrostatic characteristics, so deposited charges were expected to have different impacts on their surface hydrophobicity. The degradation mechanism based on our results was discussed.

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Dispersion Behavior and Size Analysis of Thermally Purified High Pressure-high Temperature Synthesized Nanodiamond Particles

  • Kwon, Hansang;Park, Jehong;Leparoux, Marc
    • 한국분말재료학회지
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    • 제24권3호
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    • pp.216-222
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    • 2017
  • Synthesized monocrystalline nanodiamond (nD) particles are heat-treated at various temperatures to produce highly structured diamond crystals. The heat-treated nDs show different weight loss ratios during thermogravimetric analysis. The crystallinities of the heat-treated nDs are analyzed using Raman spectroscopy. The average particle sizes of the heat-treated nDs are measured by a dynamic light scattering (DLS) system and direct imaging observation methods. Moreover, individual dispersion behaviors of the heat-treated nD particles are investigated based on ultrasonic dispersion methods. The average particle sizes of the dispersed nDs according to the two different measurement methods show very similar size distributions. Thus, it is possible to produce highly crystallized nD powder particles by a heat-treatment process, and the nD particles are relatively easy to disperse individually without any dispersant. The heat-treated nDs can lead to potential applications such as in nanocomposites, quantum dots, and biomedical materials.

실시간 미세입자 측정을 위한 다이오드형 코로나 하전기의 설계 및 성능평가 (Design and Performance Evaluation of a Diode Type Corona Charger for Real-Time Measurement of the Submicron Aerosol)

  • 조명훈;지준호;박동호;배귀남;황정호
    • 대한기계학회논문집B
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    • 제28권9호
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    • pp.1066-1074
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    • 2004
  • With a diode corona charger, which is a component of ELPI(Electrical Low Pressure Impactor), aerosol particles are charged to make electrical detection possible before they are collected by the impactor. We designed and evaluated two cylindrical corona chargers, each of which had a central corona needle electrode. For the performance evaluation of each corona charger the polydisperse dioctyl sebacate(DOS) particles, with diameters of 0.1∼0.8 $\mu$m and NaCl particles, smaller than 0.1$\mu$m, were used. The particles were then led through an electrostatic classifier (TSI model 3081) to classify monodisperse aerosol with minimal size deviation. After evaluating the wall loss of the particles in the corona charger, we measured the product of penetration and number of charges, Pㆍn, to evaluate the corona charger efficiency at high positive voltages of 4, 5, 6 kV.

고조파 전류가 변압기 진동에 미치는 영향에 관한 연구 (The Study of the Harmonic Currents Effects on the Transformer Vibration)

  • 김수열;김연환;김장목;임익헌;이현
    • 한국안전학회지
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    • 제15권1호
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    • pp.106-111
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    • 2000
  • EP(Electrostatic Precipitator) has been used to keep the natural environment from fly-ash in the industrial fields and operated in intermittent PEC(Pulse Energized Control) mode to improve dust-collecting efficiency. Intermittent PEC mode induces low-frequency harmonic currents into power system, therefore EP transformer vibrates. This continuous transformer vibration developes transformer abnormal audio-noise and if it is too much or operates in the region of natural frequency, transformer will be damaged in the end. EP interruption caused by transformer damage results in power generation stopped, power quality down and economic loss. Therefore, this paper explains harmonic currents and transformer vibration-core vibration, winding vibration, and proposes the measures of suppressing the vibration with EP operated in intermittent PEC mode. And this results is proposed to be used for future EP transformer design or EP control method to operate EP-concerned equipment safely keeping from system faults caused by transformer vibration.

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중 에너지 이온산란 분광장치의 제작 및 성능 평가 (Construction and performance evaluation of a medium energy ion scattering spectroscopy system)

  • 김현경;문대원;김영필;이재철;강희재
    • 한국진공학회지
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    • 제6권1호
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    • pp.97-102
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    • 1997
  • 이온-고체 표면 사이의 상호작용에 관한 연구를 수행하기 위하여 중 에너지 이온산 란 분광장치를 개발하였고 그 특성 평가를 수행하였다. 제작된 MEIS의 에너지 분해능은 $4\times 10^{-3}$으로 측정되었다. MEIS의 표면분석의 응용으로 60keVH+을 $Ta_2O_5$(300$\AA$)/Si에 적용하 여 에너지 손실인자와 깊이분해능을 얻은 결과는 42eV/$\AA$와 9.7$\AA$이었다. 또한, Si(100)표면 에 97.5KeV$H^+$이온을 random방향으로 입사시켜 이차원 스펙트럼을 얻었다.

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Dielectric Properties of Ca0.8Sr1.2Nb3O10 Nanosheet Thin Film Deposited by the Electrophoretic Deposition Method

  • Yim, Haena;Yoo, So-Yeon;Choi, Ji-Won
    • 센서학회지
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    • 제27권1호
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    • pp.1-5
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    • 2018
  • Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.

2차원 양자 역학적 해석에 의한 고속 통신용 $Al_{x}Gal{-x}As/Ga_{x}In1$_{-x}$As/GaAs HEMT 소자의 전자 농도 및 전위분포 계산 (Calculation of Electron concentration and Electrostatic potential profile for $Al_{x}Gal{-x}As/Ga_{x}In1$_{-x}$As/GaAs HEMT device by 2-Dimensional Quantum Mechanical analysis))

  • 송영진;황호정
    • 전자공학회논문지A
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    • 제30A권3호
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    • pp.76-87
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    • 1993
  • We present a self-consistent, 2-dimensional solution of the Poisson and Sch rodinger equation based on the finite difference method with a nonuniform mesh size for a AlGaAs/GaInAs/GaAs HEMT devide. During the interative self-consistent calculation, however, we calculate Schrodinger equation only a some region of device, not a fully region in order to save the moemory and the speed-up of computation, and then use the approximated data for the other region using by a interpolation method with a given values. Also we adopt the proper matrix transformation method that allows preservation of the symmetric, form of the discretized Schrodinger equation, even with the use of a nonumiform mesh size, therefor, can reduce the computation time. We calculate the wavefunction, eigenstates and the electron concentration uat channel layer nder the thermal equilibrium and the biased conditions, respectively. Also,these parameters are used to solve 2-dimensional tdistribution of potential in he entire region of device. It is proved that the method is very efficient in finding eigenstages extending over relatively large spatial area without loss of accuracy. So, it can be used rather easily in any sarbitrary modulation doped utucture.

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